Apex PA09A, PA09 Datasheet

R

C

TOP VIEW

1

2

3

4

5

6

7

8

C

C

–V

S

+IN

–IN

+V

S

OUT

BAL

C

C

R

C

RS = (| +VS | + | –VS |) RT/1.6

NOTE: Input offset voltage trim optional. R

T

= 10K MAXΩ

R

T

R

S

PHASE COMPENSATION

C

C

100pF

15pF

5pF

none

GAIN

1

10

100

1000

R

C

200

0
0

none

Ω
Ω
Ω

VIDEO POWER OPERATIONAL AMPLIFIERS

MICROTECHNOLOGY

HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX [phone]

FEATURES

• POWER MOS TECHNOLOGY — 2A peak rating

• HIGH GAIN BANDWIDTH PRODUCT — 150MHz

• VERY FAST SLEW RATE — 400V/µs

• PROTECTED OUTPUT STAGE — Thermal shutoff

• EXCELLENT LINEARITY — Class A/B output

• WIDE SUPPLY RANGE — ±12V to ±40V

• LOW BIAS CURRENT, LOW NOISE — FET input

PA09 • PA09A

APPLICATIONS

• VIDEO DISTRIBUTION AND AND AMPLIFICATION

• HIGH SPEED DEFLECTION CIRCUITS

• POWER TRANSDUCERS TO 5MHz

• COAXIAL LINE DRIVERS

• POWER LED OR LASER DIODE EXCITATION

DESCRIPTION

The PA09 is a high voltage, high output current operational
amplifier optimized to drive a variety of loads from DC through
the video frequency range. Excellent input accuracy is
achieved with a dual monolithic FET input transistor which is
cascoded by two high voltage transistors to provide outstand­ing common mode characteristics. All internal current and
voltage levels are referenced to a zener diode biased on by
a current source. As a result, the PA09 exhibits superior DC
and AC stability over a wide supply and temperature range.

High speed and freedom from second breakdown is as­sured by a complementary Power MOS output stage. For
optimum linearity, especially at low levels, the Power MOS
transistors are biased in the class A/B mode. Thermal shutoff
provides full protection against overheating and limits the
heatsink requirements to dissipate the internal power losses
under normal operating conditions. A built-in current limit
protects the amplifier against overloading. Transient induc­tive load kickback protection is provided by two internal
clamping diodes. External phase compensation allows the
user maximum flexibility in obtaining the optimum slew rate
and gain bandwidth product at all gain settings. For continu­ous operation under load, a heatsink of proper rating is
recommended.

This hybrid integrated circuit utilizes thick film (cermet) resistors,
ceramic capacitors and silicon semiconductor chips to maximize
reliability, minimize size and give top performance. Ultrasonically
bonded aluminum wires provide reliable interconnections at all
operating tempera­tures. The 8-pin TO-3
package is hermetically
sealed and electrically
isolated. The use of
com-pressible thermal
washers and/or im­proper mounting torque
will void the product
warranty. Please see
“General Operating
Considerations”.

FIGURE 1. PA09 AS DEFLECTION AMPLIFIER

APEX MICROTECHNOLOGY CORPORATION • TELEPHONE [phone] • FAX [phone] • ORDERS [phone] • EMAIL [e-mail]

V

I

+37V

3

4

PA09

5

C
7

6

2pF

C

–37V

8

1

470pF

C

R

12K

DEFLECTION AMPLIFIER (Figure 1)

The deflection amplifier circuit of Figure 1 achieves arbitrary
beam positioning for a fast heads-up display. Maximum tran­sition times are 4µs while delivering 2A pk currents to the
13mH coil. The key to this circuit is the sense resistor (R
which converts yoke current to voltage for op amp feedback.

)

S

This negative feedback forces the coil current to stay exactly
proportional to the control voltage. The network consisting of
R

, RF and CF serves to shift from a current feedback via RS to

D

a direct voltage feedback at high frequencies. This removes
the extra phase shift caused by the inductor thus preventing
oscillation. See Application Note 5 for details of this and other
precision magnetic deflection circuits.

EQUIVALENT SCHEMATIC

2
3

7
8

5

4

6

Q12A

Q1

Q8

C2

Q5

Q15

Q18

Q2

Q9
Q12B

Q10

D1

Q3

Q4

Q13

Q11

Q14

D3

D2

C1

Q6

Q7

1

Q17

Q19

Q16

EXTERNAL CONNECTIONS

di

= 15A/µs

dt

i = Vi/R

S

R

100

F

Ω

L

Y

13µH
1

Ω

R

S

.5

Ω

F

D

PA09 • PA09A

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +VS to –V
OUTPUT CURRENT, within SOA 5A
POWER DISSIPATION, internal

S

1

80V

78W
INPUT VOLTAGE, differential 40V
INPUT VOLTAGE, common mode ±V
TEMPERATURE, pin solder - 10s 300°C
TEMPERATURE, junction

1

S

150°C
TEMPERATURE RANGE, storage –65 to +150°C
OPERATING TEMPERATURE RANGE, case –55 to +125°C

SPECIFICATIONS

PARAMETER TEST CONDITIONS

PA09

2

MIN TYP MAX MIN TYP MAX UNITS

PA09A

INPUT

OFFSET VOLTAGE, initial TC = 25°C.5± 3 ± .25 ± .5 mV
OFFSET VOLTAGE, vs. temperature TC = 25 to +85°C1030510µV/°C
OFFSET VOLTAGE, vs. supply TC = 25°C10*µV/V
OFFSET VOLTAGE, vs. power TC = 25 to +85°C20*µV/W
BIAS CURRENT, initial TC = 25°C 5 100 3 20 pA
BIAS CURRENT, vs. supply TC = 25°C .01 * pA/V
OFFSET CURRENT, initial TC = 25°C 2.5 50 1.5 10 pA
INPUT IMPEDANCE, DC TC = 25°C10
INPUT CAPACITANCE TC = 25°C6*pF
COMMON MODE VOLTAGE RANGE

3

TC = –25 to +85°C ± VS–10 ± VS–8 * * V

11

* Ω

COMMON MODE REJECTION, DC TC = –25 to +85°C, VCM = ± 20V 104 * dB

GAIN

OPEN LOOP GAIN at 10Hz TC = 25°C, RL = 1kΩ 90 * dB
OPEN LOOP GAIN at 10Hz TC = 25°C, RL = 15Ω 80 88 * * dB
GAIN BANDWIDTH PRODUCT at 1MHz TC = 25°C, RL = 15Ω, CC = 5pF 150 * MHz
POWER BANDWIDTH, gain of 100 comp TC = 25°C, RL = 15Ω, CC = 5pF 1.2 * MHz
POWER BANDWIDTH, unity gain comp TC = 25°C, RL = 15Ω, CC = 100pF .75 * MHz

OUTPUT

VOLTAGE SWING

3

TC = –25 to +85°C, IO = 2A ± VS –8 ± VS –7 * * V
CURRENT, PEAK TC = 25°C 4.5 * A
SETTLING TIME to .1% TC = 25°C, 2V step .3 * µs
SETTLING TIME to .01% TC = 25°C, 2V step 1.2 * µs
SLEW RATE, gain of 100 comp TC = 25°C, CC = 5pF 400 * V/µs
SLEW RATE, unity gain comp TC = 25°C, CC = 100pF 75 * V/µs

POWER SUPPLY

VOLTAGE TC = –25 to +85°C ± 12 ± 35 ± 40 * * * V
CURRENT, quiescent TC = 25°C7085**mA

THERMAL

RESISTANCE, AC junction to case

4

TC = –25 to +85°C, F > 60Hz 1.2 1.3 * * °C/W
RESISTANCE, DC junction to case TC = –25 to +85°C, F < 60Hz 1.6 1.8 * * °C/W
RESISTANCE, junction to air TC = –25 to +85°C30*°C/W
TEMPERATURE RANGE, case Meets full range specifications –25 25 + 85 * * * °C

NOTES: * The specification of PA09A is identical to the specification for PA09 in applicable column to the left.

1. Long term operation at the maximum junction temperature will result in reduced product life. Derate power dissipation to
achieve high MTTF.

2. The power supply voltage for all tests is ±35V unless otherwise specified as a test condition.

3. +VS and -VS denote the positive and negative supply rail respectively. Total VS is measured from +VS to –VS.

4. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

CAUTION

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.

APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: [phone]