Apec AP4500GM Schematic [ru]
T
AP4500GM
Pb Free Plating Product
Advanced Power N AND P-CHANNEL ENHANCEMEN
Electronics Corp. MODE POWER MOSFET
▼
▼ Simple Drive Requirement
▼ ▼
▼
▼ Low On-resistance R
▼ ▼
▼
▼ Fast Switching I
▼ ▼
D1
D2
D1
SO-8
D2
G2
S2
G1
S1
Description I
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
N-CH BV
D
P-CH BV
R
D
DSS
DS(ON)
DSS
DS(ON)
D1
20V
30mΩ
6A
-20V
50mΩ
-5A
D2
The SO-8 package is universally preferred for all commercial-
G1
G2
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
V
GS
I
=25℃ Continuous Drain Current
D@TA
=70℃ Continuous Drain Current
I
D@TA
I
DM
P
=25℃ Total Power Dissipation 2.0 W
D@TA
Drain-Source Voltage -20 V
Gate-Source Voltage ±12 V
Pulsed Drain Current
3
3
1
20
±12
6
4.8
20
-5 A
-4 A
-20 A
Linear Derating Factor 0.016 W/℃
T
STG
T
J
Storage Temperature Range -55 to 150 ℃
Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
Parameter
3
Max. 62.5 ℃/W
S2
Data and specifications subject to change without notice
200609031
AP4500GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=1mA - 0.037 -V/℃
D
Static Drain-Source On-Resistance2VGS=4.5V, ID=6A - - 30 mΩ
V
=2.5V, ID=5.2A - - 45 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V
Forward Transconductance VDS=10V, ID=6A - 18.5 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=20V, VGS=0V - - 1
VDS=16V, VGS=0V - - 25
Gate-Source Leakage VGS=±12V - Total Gate Charge
2
ID=6A - 9 15
Gate-Source Charge VDS=10V - 1.8 Gate-Drain ("Miller") Charge VGS=4.5V - 4.2 Turn-on Delay Time
2
VDS=10V - 29 Rise Time ID=1A - 65 Turn-off Delay Time RG=6Ω,VGS=4.5V - 60 -
Fall Time RD=10Ω -50Input Capacitance VGS=0V - 300 480
Output Capacitance VDS=8V - 255 Reverse Transfer Capacitance f=1.0MHz - 115 -
±100
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time IS=6A, VGS=0V, - 26 Reverse Recovery Charge dI/dt=100A/µs - 17 -
2
IS=1.7A, VGS=0V - - 1.2 V
ns
nC
AP4500GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA -20 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=-1mA - -0.037 -V/℃
D
Static Drain-Source On-Resistance2VGS=-4.5V, ID=-2.2A - - 50 mΩ
V
=-2.5V, ID=-1.8A - - 90 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1 V
Forward Transconductance VDS=-10V, ID=-2.2A - 2.5 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage VGS=-Total Gate Charge
2
VDS=-20V, VGS=0V - - -1
VDS=-16V, VGS=0V - - -25
± 12V ±100
ID=-5A - 14 20
Gate-Source Charge VDS=-16V - 2 Gate-Drain ("Miller") Charge VGS=-4.5V - 5.6 Turn-on Delay Time
2
VDS=-10V - 10 Rise Time ID=-2.2A - 11 Turn-off Delay Time RG=6Ω,VGS=-10V - 58 Fall Time RD=4.5Ω -38Input Capacitance VGS=0V - 940 1500
Output Capacitance VDS=-20V - 400 Reverse Transfer Capacitance f=1.0MHz - 160 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time IS=-2.2A, VGS=0V, - 25 Reverse Recovery Charge dI/dt=100A/µs - 21 -
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <
3.Surface mounted on 1 in
300us , duty cycle <2%.
2
copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
2
IS=-1.8A, VGS=0V - - -1.2 V
ns
nC
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