Advanced Power
Electronics Corp.
Dual N-channel Enhancement-mode Power MOSFETs
AP4232BGM-HF-3
Simple Drive Requirement
Low Gate-charge
Fast Switching Performance I 7.6A
BV 30V
DSS
R 22mΩ
DS(ON)
D
RoHS-compliant halogen-free SO-8 package
D1
G1
G G2
Description
S1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The AP4232BGM-HF-3 is in the popular SO-8 surface-mount package
D1
D1
D2
D2
and is well-suited for use in low-voltage DC/DC conversion and
general load-switching applications.
SO-8
Absolute Maximum Ratings
D2
S2
G2
S2
G1
S1
Symbol Units
V
DS
V
GS
I
at TA=25°C
D
at TA=70°C
I
D
I
DM
P
at TA=25°C
D
Drain-Source Voltage
Gate-Source Voltage ±
Continuous Drain Current
Continuous Drain Curren
Pulsed Drain Current
Total Power Dissipation 2 W
Parameter Rating
30 V
20 V
3
3
t
1
7.6 A
6 A
30 A
Linear Derating Factor 0.016
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range -55 to 150 °C
-55 to 150 °C
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Parameter
3
62.5 °C/W
Ordering Information
AP4232BGM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel
W/°C
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200908031-3
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Advanced Power
Electronics Corp.
Electrical Characteristics at T
AP4232BGM-HF-3
= 25°C (unless otherwise specified)
j
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Static Drain-Source On-Resistance2VGS=10V, ID=7A - - 22 mΩ
=4.5V, ID=5A - - 32 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=7A - 15 - S
Drain-Source Leakage Current
V
=30V, VGS=0V - - 1
DS
Gate-Source Leakage VGS=±20V, VDS=0V - - ±100
Total Gate Charge
2
ID=7A - 6 9.6
Gate-Source Charge VDS=15V - 1.3 Gate-Drain ("Miller") Charge VGS=4.5V - 3.4 Turn-on Delay Time
2
VDS=15V - 6 Rise Time ID=1A - 7.5 Turn-off Delay Time RG=3.3Ω, VGS=10V - 16 -
Fall Time RD=15Ω -4Input Capacitance VGS=0V - 370 600
Output Capacitance VDS=25V - 90 Reverse Transfer Capacitance f=1.0MHz - 75 Gate Resistance f=1.0MHz - 1.6 3.2
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <
3.Surface-mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
300us, duty cycle <2%
2
2
2
copper pad of FR4 board; 135 °C/W when mounted on minimum copper pad.
IS=1.7A, VGS=0V - - 1.2 V
IS=7A, VGS=0V, - 17.5 - ns
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Advanced Power
I
Electronics Corp.
AP4232BGM-HF-3
40
V
=4.0V
G
10V
7.0V
6.0V
5.0V
TA=25oC
30
20
, Drain Current (A)
D
I
10
0
01234
VDS , Drain-to-Source Voltage (V)
40
TA=150oC
10V
7.0V
6.0V
30
20
, Drain Current (A)
D
I
10
0
012345
V
=4.0V
G
5.0V
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
(mΩ)
DS(ON)
R
30
=5A
D
=25°C
T
26
22
18
A
DS(ON)
Normalized R
2.0
1.6
1.2
ID=7A
V
=10V
G
14
10
246810
VGS , Gate-to-Source Voltage (V)
0.8
0.4
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance
vs. Junction Temperature
8
6
(A)
S
I
4
Tj=25oCTj=150oC
2
0
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
1.4
1.2
(V)
1.0
GS(th)
0.8
Normalized V
0.6
0.4
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Advanced Power
f
z
Electronics Corp.
AP4232BGM-HF-3
10
8
=7A
I
D
6
4
, Gate to Source Voltage ( V)
GS
2
V
0
024681012
VDS=15V
QG , Total Gate Charge (nC)
600
500
400
C (pF)
300
200
100
0
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
=1.0MH
C
C
C
iss
oss
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
10
R
DS(ON)
(A)
D
1
I
0.1
TA=25oC
Single Pulse
0.01
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
1
)
thja
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Normalized Thermal Response (R
Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
P
DM
Duty factor = t/T
Peak T
R
= 135°C/W
thja
t
T
= PDM x R
j
+ T
thja
t , Pulse Width (s)
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
V
V
DS
G
90%
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
t
d(on)
r
t
d(off)tf
Charge
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Q
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Advanced Power
4232BG
Electronics Corp.
Package Dimensions: SO-8
AP4232BGM-HF-3
A1
D
SYMBOLS
A 1.35 1.55 1.75
5678
E1
1
2
34
E
e
B
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
C 0.19 0.22 0.25
D 4.80 4.90 5.00
E1 3.80 3.90 4.00
E 5.80 6.15 6.50
L 0.38 0.71 1.27
θ
0 4.00 8.00
e
Millimeters
MIN NOM MAX
1.27 TYP
A
DETAIL A
L
θ
c
Marking Information: SO-8
M
YWWSSS
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
DETAIL A
Product: AP4232B
Package:
GM = RoHS-compliant halogen-free SO-8
Date/lot code (YWWSSS)
Y: Last digit of the year
WW: Work week
SSS: Lot code sequence
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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