Apec AP4232BGM-HF-3 Schematic [ru]
Advanced Power
Electronics Corp.
Dual N-channel Enhancement-mode Power MOSFETs
AP4232BGM-HF-3
Simple Drive Requirement
Low Gate-charge
Fast Switching Performance I 7.6A
BV 30V
DSS
R 22mΩ
DS(ON)
D
RoHS-compliant halogen-free SO-8 package
D1
G1
G G2
Description
S1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The AP4232BGM-HF-3 is in the popular SO-8 surface-mount package
D1
D1
D2
D2
and is well-suited for use in low-voltage DC/DC conversion and
general load-switching applications.
SO-8
Absolute Maximum Ratings
D2
S2
G2
S2
G1
S1
Symbol Units
V
DS
V
GS
I
at TA=25°C
D
at TA=70°C
I
D
I
DM
P
at TA=25°C
D
Drain-Source Voltage
Gate-Source Voltage ±
Continuous Drain Current
Continuous Drain Curren
Pulsed Drain Current
Total Power Dissipation 2 W
Parameter Rating
30 V
20 V
3
3
t
1
7.6 A
6 A
30 A
Linear Derating Factor 0.016
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range -55 to 150 °C
-55 to 150 °C
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Parameter
3
62.5 °C/W
Ordering Information
AP4232BGM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel
W/°C
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200908031-3
1/5
Advanced Power
Electronics Corp.
Electrical Characteristics at T
AP4232BGM-HF-3
= 25°C (unless otherwise specified)
j
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Static Drain-Source On-Resistance2VGS=10V, ID=7A - - 22 mΩ
=4.5V, ID=5A - - 32 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=7A - 15 - S
Drain-Source Leakage Current
V
=30V, VGS=0V - - 1
DS
Gate-Source Leakage VGS=±20V, VDS=0V - - ±100
Total Gate Charge
2
ID=7A - 6 9.6
Gate-Source Charge VDS=15V - 1.3 Gate-Drain ("Miller") Charge VGS=4.5V - 3.4 Turn-on Delay Time
2
VDS=15V - 6 Rise Time ID=1A - 7.5 Turn-off Delay Time RG=3.3Ω, VGS=10V - 16 -
Fall Time RD=15Ω -4Input Capacitance VGS=0V - 370 600
Output Capacitance VDS=25V - 90 Reverse Transfer Capacitance f=1.0MHz - 75 Gate Resistance f=1.0MHz - 1.6 3.2
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <
3.Surface-mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
300us, duty cycle <2%
2
2
2
copper pad of FR4 board; 135 °C/W when mounted on minimum copper pad.
IS=1.7A, VGS=0V - - 1.2 V
IS=7A, VGS=0V, - 17.5 - ns
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5
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