Apec AP40T03GP-HF-3, AP40T03GS-HF-3 Schematics
Advanced Power
A
Electronics Corp.
N-channel Enhancement-mode Power MOSFET
AP40T03GP/S-HF-3
Simple Drive Requirement
Low Gate Charge
Fast Switching Performance R 25mΩ
G
G
RoHS-compliant, halogen-free I 28A
D
D
BV 30V
DSS
DS(ON)
S
S
D
Description
dvanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP40T03GS-HF-3 is in the TO-263 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
The AP40T03GP-HF-3 is in the TO-220 through-hole package which is
used where a low PCB footprint or an attached heatsink is required.
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
at TC=25°C
I
D
I
at TC=100°C
D
I
DM
at TC=25°C
P
D
T
STG
T
J
Drain-Source Voltage 30 V
Gate-Source Voltage ±25 V
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation 31.25 W
Storage Temperature Range
Operating Junction Temperature Range -55 to 150 °C
Parameter Rating
1
G
D
S
TO-263 (S)
G
D
S
A
28
A
24
95 A
-55 to 150 °C
TO-220 (P)
Thermal Data
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4 °C/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 °C/W
Parameter
Ordering Information
AP40T03GS-HF-3TR RoHS-compliant, halogen-free TO-263, shipped on tape and reel (800 pcs/reel)
AP40T03GP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200503313-3
1/6
Advanced Power
Electronics Corp.
Electrical Specifications
at T
=25°C (unless otherwise specified)
j
AP40T03GP/S-HF-3
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
∆BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
/∆Tj
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Breakdown Voltage Temperature Coefficient Reference to 25°C, I
=1mA - 0.032 - V/°C
D
Static Drain-Source On-Resistance VGS=10V, ID=18A - - 25 mΩ
V
=4.5V, ID=14A - - 45 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=18A - 15 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
VDS=30V, VGS=0V - - 1
VDS=24V ,VGS=0V - - 25
Gate-Source Leakage VGS= ±25V - - ±100
Total Gate Charge
2
ID=18A - 8.8 Gate-Source Charge VDS=20V - 2.5 Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 Turn-on Delay Time
2
VDS=15V - 6 Rise Time ID=18A - 62 Turn-off Delay Time RG=3.3Ω, VGS=10V - 16 -
Fall Time RD=0.83Ω - 4.4 Input Capacitance VGS=0V - 655 Output Capacitance VDS=25V - 145 Reverse Transfer Capacitance f=1.0MHz - 95 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
1
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
300us , duty cycle <2%.
=0V , VS=1.3V - - 28
D=VG
--95
Tj=25°C, IS=28A, VGS=0V - - 1.3 V
A
A
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/6
Advanced Power
Electronics Corp.
Typical Electrical Characteristics
AP40T03GP/S-HF-3
90
TC=25oC
60
30
, Drain Current (A)
D
I
0
0.0 1.0 2.0 3.0 4.0
V
VDS , Drain-to-Source Voltage (V)
8
6
=4.0V
G
10V
.0V
.0V
75
TC=150oC
50
, Drain Current (A)
25
D
I
0
0.0 1.0 2.0 3.0 4.0
V
VDS , Drain-to-Source Voltage (V)
8
6
=4.0V
G
10V
.0V
.0V
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
DS(ON)
Normalized R
2.0
1.4
0.8
ID=18A
V
=10V
G
(mΩ)
DS(ON)
R
70
ID=14A
T
=25°C
C
50
30
10
0 5 10 15
VGS , Gate-to-Source Voltage (V)
0.2
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance
vs. Junction Temperature
100
10
T
=150oC
j
(A)
S
I
1
0.1
0 0.4 0.8 1.2 1.6
Tj=25oC
VSD , Source-to-Drain Voltage (V)
2.5
2.0
1.5
(V)
GS(th)
V
1.0
0.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
3/6
Loading...