AP2607GY-HF
Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline R
▼ Surface Mount Device I
G
BV
DS(ON)
D
DSS
▼ Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
S
SOT-26
S
D
D
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
I
=25℃ A
D@TA
=70℃ A
I
D@TA
I
DM
P
T
T
=25℃ W
D@TA
STG
J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
3
3
1
Rating
-20
8
+
-5
-4
-20
2
-55 to 150
-55 to 150
D
-20V
52mΩ
-5A
G
D
V
V
A
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
62.5 ℃/W
1
201104223
AP2607GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
Static Drain-Source On-Resistance2VGS=-4.5V, ID=-5A - - 52 mΩ
=-2.5V, ID=-4A - - 65 mΩ
V
GS
=-1.8V, ID=-1A - - 90 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -0.3 - -1 V
Forward Transconductance VDS=-5V, ID=-5A - 9 - S
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=55oC)
V
=-16V, VGS=0V - - -1
DS
VDS=-16V, VGS=0V - - -10
Gate-Source Leakage VGS= + 8V, VDS=0V - - +100
Total Gate Charge
2
ID=-5A - 13 21
Gate-Source Charge VDS=-10V - 1.5 -
Gate-Drain ("Miller") Charge VGS=-4.5V - 4.5 -
Turn-on Delay Time
2
VDS=-10V - 10 -
Rise Time ID=-1A - 18 -
Turn-off Delay Time RG=3.3Ω,VGS=-5V - 23 -
Fall Time RD=10Ω -31-
Input Capacitance VGS=0V - 1030 1650
Output Capacitance VDS=-20V - 120 -
Reverse Transfer Capacitance f=1.0MHz - 105 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 20 -
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
2
2
IS=-1.2A, VGS=0V - - -1.2 V
IS=-5A, VGS=0V, - 29 -
ns
nC
2
AP2607GY-HF
20
TA=25oC
16
-5.0V
-4.5V
-3.5V
-2.5V
-2.0V
V
12
8
, Drain Current (A)
D
-I
4
0
02468
= -1.8V
G
-VDS , Drain-to-Source Voltage (V)
20
TA=150oC
16
-5.0V
-4.5V
-3.5V
-2.5V
VG= -2.0V
12
8
, Drain Current (A)
D
-I
4
0
01234567
65mΩ
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
)
Ω
(m
R
DS(ON)
70
ID=-4A
ID=-4.2A
T
=25oC
A
T
=25oC
60
50
40
A
1.8
ID= -5A
V
= -4.5V
GS
1.6
DS(ON)
1.4
1.2
Normalized R
1
0.8
30
012345
-VGS , Gate-to-Source Voltage (V)
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
(V)
GS(th)
Normalized -V
1.5
1
0.5
(A)
S
-I
5
4
3
2
1
Tj=25oCTj=150oC
2.01E+08
0
0 0.2 0.4 0.6 0.8 1 1.2
-VSD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
0
-50 0 50 100 150
Tj, Junction Temperature ( oC)
Reverse Diode Junction Temperature
3
AP2607GY-HF
g
f
z
8
ID= -5A
6
V
= -10V
4
, Gate to Source Voltage ( V)
2
GS
-V
0
0 5 10 15 20 25
DS
QG , Total Gate Charge (nC)
1200
1000
800
600
C (pF)
400
200
0
1 5 9 13 17 21 25
65mΩ
-VDS , Drain-to-Source Voltage (V)
=1.0MH
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
10
Operation in this area
limited by R
DS(ON)
(A)
D
1
-I
0.1
TA=25oC
Single Pulse
0.01
0.01 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
1
Duty factor=0.5
)
thja
0.1
0.01
0.05
0.02
0.01
0.2
0.1
Single Pulse
P
DM
Duty factor = t/T
Peak T
R
thja
t
= PDM x R
j
= 156℃/W
T
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fi
V
DS
10. Effective Transient Thermal Impedance
V
G
90%
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
t
d(on)
r
t
d(off)tf
Charge
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
Q
4
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