Advanced Power
A
Electronics Corp.
N-channel Enhancement-mode Power MOSFET
AP2316GN-HF-3
Simple Drive Requirement
Low Gate Charge
Surface Mount Device R 42mΩ
RoHS-compliant, halogen-free I 4.7A
G
D
BV 30V
DSS
DS(ON)
D
S
Description
dvanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP2316GN-HF-3 is in the popular SOT-23 small surface-mount package
which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in medium current applications such as
load switches.
D
SOT-23
S
G
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
at T =25°C 4.7 A
I Continuous Drain Current
D A
I
at T = 70°C 3.7 A
D A
I
DM
at TA=25°C
P Total Power Dissipation 1.38 W
D
T
STG
T Operating Junction Temperature Range -55 to 1
J
Drain-Source Voltage 30 V
Gate-Source Voltage +
Continuous Drain Current
Pulsed Drain Current
Storage Temperature Range
Parameter Rating
20 V
3
3
1
10 A
-55 to 150 °C
50 °C
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Parameter
90 °C/W
Ordering Information
AP2316GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2010 Advanced Power Electronics Corp. USA 201008182-3
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Electrical Specifications
at T
=25°C (unless otherwise specified)
j
AP2316GN-HF-3
Symbol Parameter
BV
DSS
∆BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
/∆Tj
DSS
DS(ON)
GS(th)
fs
DSS
GSS
g
gs
gd
d(on)
r
d(off)
f
iss
oss
rss
g
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Breakdown Voltage Temperature Coefficient Reference to 25°C, I
Static Drain-Source On-Resistance VGS=10V, ID=4A - - 42 mΩ
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=4A - 5 - S
Drain-Source Leakage Current
Gate-Source Leakage VGS=±20V - - ±100
Total Gate Charge
Gate-Source Charge VDS=24V - 1 Gate-Drain ("Miller") Charge VGS=4.5V - 3 Turn-on Delay Time
Rise Time ID=1A - 8 Turn-off Delay Time RG=3.3Ω, VGS=10V - 12 -
Fall Time RD=15Ω -3Input Capacitance VGS=0V - 270 430
Output Capacitance VDS=25V - 70 Reverse Transfer Capacitance f=1.0MHz - 60 Gate Resistance f=1.0MHz - 1.4 2.1
Test Conditions Min. Typ. Max. Units
=1mA - 0.02 - V/°C
D
V
=4.5V, ID=2A - - 72 mΩ
GS
V
=30V, VGS=0V - - 1
DS
=24V,VGS=0V, TJ=70°C - - 10
V
DS
2
2
ID=4A - 5 8
VDS=15V - 7 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 9 - nC
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width < 300µs , duty cycle < 2%
2
3. Surface mounted on 1in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board, t <10sec; 270°C/W when mounted on minimum copper pad.
2
2
IS=1.2A, VGS=0V - - 1.2 V
IS=4A, VGS=0V, - 14 -
ns
©2010 Advanced Power Electronics Corp. USA
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Typical Electrical Characteristics
AP2316GN-HF-3
12
TA=25oC
10V
7.0V
5.0V
V
=3.0V
G
4.5V
8
, Drain Current (A)
4
D
I
0
01234
VDS , Drain-to-Source Voltage (V)
12
TA=150oC
10 V
7.0V
5.0V
V
=3.0 V
G
4.5V
8
, Drain Current (A)
4
D
I
0
01234
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
65
ID=2A
=25oC
T
A
55
1.8
1.5
DS(ON)
ID=4A
V
=10V
G
45
(mΩ)
DS(ON)
R
35
25
246810
VGS , Gate-to-Source Voltage (V)
1.2
Normalized R
0.9
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance
Gate Voltage
4.0
3.0
(A)
S
I
2.0
1.0
Tj=25oCTj=150oC
vs. Junction Temperature
1.8
1.4
(V)
GS(th)
1.0
Normalized V
0.6
0.0
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
0.2
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature
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f
z
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP2316GN-HF-3
10
1000
=1.0MH
ID=4A
8
=15V
V
DS
V
=20V
6
4
, Gate to Source Voltage ( V)
GS
V
2
0
02468
V
DS
=24V
DS
QG , Total Gate Charge (nC)
100
C (pF)
10
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
10
1
(A)
D
I
0.1
T
=25oC
A
Single Pulse
0.01
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
1
Duty factor=0.5
)
thja
0.2
0.1
0.1
0.05
P
DM
0.01
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
= PDM x R
j
R
= 270°C/W
thja
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
12
V
4.5V
G
Q
G
Q
GS
Q
GD
V
=5V
DS
9
Tj=150oCTj=25oC
6
, Drain Current (A)
D
I
3
Charge
0
0246
VGS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Q
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Package Dimensions: SOT-23
AP2316GN-HF-3
D1
D
SYMBOLS
A 0.88 -- 1.30
A1 0.00 -- 0.10
E1
E
A2 0.08 -- 0.25
D1 0.30 0.40 0.50
Millimeters
MIN NOM MAX
e 1.70 2.00 2.30
D 2.70 2.90 3.10
E 2.20 2.60 3.00
e
A2
A
A1
L
M
M
E1 1.20 1.50 1.80
M 0° -- 10°
L 0.30 -- 0.60
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
Marking Information: SOT-23
Product: NI = AP2316GN-HF-3
NIXX
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Date/lot code
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to standard YYWW date code format,
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