AP2307GN-HF
Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline R
D
▼ Surface Mount Device I
BV
DS(ON)
D
DSS
▼ RoHS Compliant & Halogen-Free
S
Description
SOT-23
G
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
I
=25℃ A
D@TA
=70℃ A
I
D@TA
I
DM
P
=25℃ W
D@TA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Parameter
3
3
1
Linear Derating Factor
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
Rating
-16
8
+
-4
-3.3
-12
1.38
0.01
-55 to 150
-55 to 150
-16V
60mΩ
- 4A
D
S
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
90 ℃/W
1
201003154
AP2307GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -16 - - V
=-4.5V, ID=-4A - - 60 mΩ
V
GS
Static Drain-Source On-Resistance
2
=-2.5V, ID=-3.0A - - 70 mΩ
V
GS
=-1.8V, ID=-2.0A - - 90 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA - - -1.0 V
Forward Transconductance VDS=-5V, ID=-4A - 12 - S
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
=-16V, VGS=0V - - -1
V
DS
VDS=-12V, VGS=0V - - -25
Gate-Source Leakage VGS=+8V, VDS=0V - - +100
Total Gate Charge
2
ID=-4A - 15 24
Gate-Source Charge VDS=-12V - 1.3 Gate-Drain ("Miller") Charge VGS=-4.5V - 4 Turn-on Delay Time
2
VDS=-10V - 8 Rise Time ID=-1A - 11 Turn-off Delay Time RG=3.3Ω,VGS=-10V - 54 -
Fall Time RD=10Ω -36Input Capacitance VGS=0V - 985 1580
Output Capacitance VDS=-15V - 180 Reverse Transfer Capacitance f=1.0MHz - 160 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 26 -
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
2
2
IS=-1.2A, VGS=0V - - -1.2 V
IS=-4A, VGS=0V, - 39 -
ns
nC
2
AP2307GN-HF
16
V
G
-5.0V
-4.5V
-3.0V
-2.5V
= -1.8 V
TA=25oC
14
12
10
8
6
, Drain Current (A)
D
-I
4
2
0
02468
-VDS , Drain-to-Source Voltage (V)
14
-5.0V
-4.5V
12
TA=150oC
-3.0V
10
8
6
, Drain Current (A)
D
4
-I
2
0
02468
V
G
-2.5V
= -1.8 V
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Ω
)
(m
DS(ON)
R
70
ID=-3A
T
=25oC
A
60
50
1.6
ID= -4A
V
= -4.5V
G
1.4
1.2
DS(ON)
1.0
Normalized R
0.8
40
13579
-VGS , Gate-to-Source Voltage (V)
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2
(A)
S
-I
1
0
0 0.2 0.4 0.6 0.8 1
Tj=25oCTj=150oC
-VSD , Source-to-Drain Voltage (V)
2.0
1.5
(V)
GS(th)
1.0
Normalized -V
0.5
0.0
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP2307GN-HF
DC
f
z
8
10000
=1.0MH
ID=-4A
V
=-12V
DS
6
4
, Gate to Source Voltage ( V)
GS
2
-V
0
0 8 16 24 32
QG , Total Gate Charge (nC)
1000
C (pF)
100
1 5 9 13 17
-VDS , Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100.00
10.00
Operation in this
area limited by
R
DS(ON)
(A)
1.00
D
-I
0.10
TA=25oC
Single Pulse
0.01
0.01 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
1
)
thja
0.1
0.01
Duty factor=0.5
0.2
0.1
0.05
0.01
Single Pulse
P
DM
Duty factor = t/T
Peak T
R
= 270℃/W
thja
t
T
= PDM x R
j
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
V
90%
10%
V
DS
GS
t
d(on)
t
r
t
d(off)tf
V
-4.5V
G
Q
G
GS
Q
GD
Charge
Q
Q
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
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