AP2302N-HF
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Lower Gate Charge R
▼ Surface Mount Package I
▼ RoHS Compliant & Halogen-Free
SOT-23S
S
G
BV
DS(ON)
D
DSS
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
G
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ A
I
D@TA
=70℃ A
I
D@TA
I
DM
P
T
T
=25℃ W
D@TA
STG
J
Drain-Source Voltage 20
Gate-Source Voltage +
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation 1
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Parameter Rating
12
3
, VGS @ 4.5V
3
, VGS @ 4.5V
1
3.2
2.6
10
-55 to 150
20V
64mΩ
3.2A
D
S
V
V
A
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
125 ℃/W
1
201112091
AP2302N-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
Static Drain-Source On-Resistance
2
=2.5V, ID=2A - - 100 mΩ
V
GS
=4.5V, ID=3A - - 64 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 0.3 0.6 1.2 V
Forward Transconductance VDS=5V, ID=3A - 11 - S
Drain-Source Leakage Current
V
=16V, VGS=0V - - 10
DS
Gate-Source Leakage VGS=+12V, VDS=0V - - +100
Total Gate Charge ID=3A - 6.5 10.5
Gate-Source Charge VDS=10V - 1 -
Gate-Drain ("Miller") Charge VGS=4.5V - 2.5 -
Turn-on Delay Time VDS=10V - 9 -
Rise Time ID=1A - 12 -
Turn-off Delay Time RG=3.3Ω -16-
Fall Time VGS=5V - 5 -
Input Capacitance VGS=0V - 300 480
Output Capacitance VDS=10V - 105 -
Reverse Transfer Capacitance f=1.0MHz - 95 -
Gate Resistance f=1.0MHz - 2 4
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time IS=3A, VGS=0V, - 20 -
Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board, t < 5s ; 350℃/W when mounted on min. copper pad.
2
IS=0.83A, VGS=0V - - 1.2 V
ns
2
AP2302N-HF
I
I
I
30
TA=25oC
5.0V
4.5V
3.5V
20
, Drain Current (A)
10
D
I
0
01234
2.5V
=2.0V
V
G
VDS , Drain-to-Source Voltage (V)
20
TA=150oC
5.0V
4.5V
16
3.5V
2.5V
12
8
, Drain Current (A)
D
I
4
0
01234
=2.0V
V
G
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
)
Ω
(m
DS(ON)
R
50
40
30
T
=2A
D
=25oC
A
DS(ON)
Normalized R
1.8
=3A
D
V
=4.5V
G
1.6
1.4
1.2
1.0
0.8
20
0123456
VGS , Gate-to-Source Voltage (V)
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
6
(A)
S
I
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
Tj=25oCTj=150oC
2
=250uA
D
1.6
(V)
1.2
GS(th)
0.8
Normalized V
0.4
0
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP2302N-HF
f
DC
8
=3A
I
D
VDS=10V
6
4
, Gate to Source Voltage ( V)
2
GS
V
0
0246810
QG , Total Gate Charge (nC)
500
400
300
C (pF)
200
100
0
1 5 9 13 17 21 25
VDS , Drain-to-Source Voltage (V)
=1.0MHz
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
10
Operation in this
area limited by
R
(A)
D
I
DS(ON)
1
0.1
TA=25oC
Single Pulse
0.01
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
1
)
thja
0.01
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
P
DM
Duty factor = t/T
Peak T
= PDM x R
j
Rthja = 350℃/W
t
T
+ T
thja
a
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
5
V
G
4
Q
G
3
2
, Drain Current (A)
D
I
1
0
25 50 75 100 125 150
4.5V
Q
GS
Q
GD
Charge
Q
TA , Ambient Temperature ( oC )
Fig 11. Maximum Continuous Drain Current Fig 12. Gate Charge Waveform
v.s. Ambient Temperature
4
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