AP2302N
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Small package outline R
D
▼ Surface mount package I
S
Description
SOT-23
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
BV
DS(ON)
D
DSS
G
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ A
I
D@TA
=70℃ A
I
D@TA
I
DM
P
T
T
=25℃ W
D@TA
STG
J
Drain-Source Voltage 20
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation 1.25
Linear Derating Factor 0.01
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Parameter Rating
3
, VGS @ 4.5V
3
, VGS @ 4.5V
1,2
± 12
2.8
2.2
10
-55 to 150
20V
85mΩ
2.8A
D
S
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
Parameter
3
Max. 100 ℃/W
20071102
AP2302N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=1mA - 0.1 - V/℃
D
Static Drain-Source On-Resistance VGS=4.5V, ID=3.6A - - 85 mΩ
=2.5V, ID=3.1A - - 115 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - - V
Forward Transconductance VDS=5V, ID=3.6A - 6 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55oC)
Gate-Source Leakage VGS=-Total Gate Charge
2
VDS=20V, VGS=0V - - 1
VDS=20V ,VGS=0V - - 10
± 8V ±100
ID=3.6A - 4.4 Gate-Source Charge VDS=10V - 0.6 Gate-Drain ("Miller") Charge VGS=4.5V - 1.9 Turn-on Delay Time
2
VDS=10V - 5.2 Rise Time ID=3.6A - 37 Turn-off Delay Time RG=6Ω,VGS=5V - 15 -
Fall Time RD=2.8Ω - 5.7 Input Capacitance VGS=0V - 145 Output Capacitance VDS=10V - 100 Reverse Transfer Capacitance f=1.0MHz - 50 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <
3.Surface mounted on FR4 board, t <
300us , duty cycle <2%.
5 sec.
1
=0V , VS=1.2V - - 1.6
D=VG
--10
IS=1.6A, VGS=0V - - 1.2 V
A
A
AP2302N
I
10
V
=4.5V
V
V
V
V
G
=3.5V
G
=3.0V
G
=2.5V
G
G
=2.0V
TC=25oC
8
6
4
, Drain Current (A)
D
I
2
0
0123
VDS , Drain-to-Source Voltage (V)
6
=4.5V
V
V
V
V
V
G
=3.5V
G
=3.0V
G
=2.5V
G
=2.0V
G
TC=150oC
4
, Drain Current (A)
2
D
I
0
0123
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100
=3.6 A
D
TC=25oC
Ω
Ω
Ω
Ω
90
80
)
(m
DSON
70
R
60
50
2345
VGS (V)
1.8
I
=3.6A
D
1.6
VG=4.5V
1.4
DS(ON)
1.2
1.0
Normalized R
0.8
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP2302N
4
3
2
, Drain Current (A)
D
I
1
0
25 50 75 100 125 150
Tc , Case Temperature ( oC)
2
1.5
1
(W)
D
P
0.5
0
0 50 100 150
Tc , Case Temperature ( oC)
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
100
1
DUTY=0.5
)
thja
10
(A)
D
I
1
Tc=25oC
Single Pulse
0.1
0.1 1 10 100
VDS (V)
1ms
10ms
100ms
1s
Normalized Thermal Response (R
0.2
0.1
0.1
0.05
SINGLE PULSE
0.02
0.01
0.0001 0.001 0.01 0.1 1 10 100
P
DM
t
Duty factor = t/T
Peak Tj = PDM x R
T
+ T
thja
t , Pulse Width (s)
a
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
AP2302N
I
f
12
=3.6A
D
=4.5V
V
DS
10
8
1000
=1.0MHz
Ciss
6
100
C (pF)
Coss
4
, Gate to Source Voltage (V)
GS
V
2
0
0123456789
QG , Total Gate Charge (nC)
10
1 5 9 1317212529
VDS (V)
Crss
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
100.0
10.0
=150oC
T
j
(A)
F
I
1.0
0.1
0.1 0.5 0.9 1.3
VSD (V)
Tj=25oC
1.6
1.4
1.2
1
(V)
GS(th)
0.8
V
0.6
0.4
0.2
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
AP2302N
A
V
DS
R
D
90%
V
D
G
R
G
DS
TO THE
OSCILLOSCOPE
0.5x RATED V
DS
10%
+
5 v
-
S
V
GS
V
GS
t
d(on)tr
t
d(off)
t
f
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
V
G
V
DS
TO THE
D
OSCILLOSCOPE
4.5V
G
S
V
+
-
1~ 3 m
I
G
GS
I
D
0.5 x RATED V
DS
Q
GS
Q
G
Q
GD
Charge
Q
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
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