Apec AP2302GN Schematic [ru]
AP2302GN
Pb Free Plating Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Capable of 2.5V gate drive
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▼ Small package outline R
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▼ Surface mount package I
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Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
SOT-23
S
G
BV
DS(ON)
D
DSS
G
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ A
I
D@TA
=70℃ A
I
D@TA
I
DM
P
T
T
=25℃ W
D@TA
STG
J
Drain-Source Voltage 20
Gate-Source Voltage ±12
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation 1.38
Linear Derating Factor 0.01
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Parameter Rating
3
, VGS @ 4.5V
3
, VGS @ 4.5V
1,2
3.2
2.6
10
-55 to 150
20V
85mΩ
3.2A
D
S
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
Parameter
3
Max. 90 ℃/W
200114054
AP2302GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=1mA - 0.1 - V/℃
D
Static Drain-Source On-Resistance2VGS=4.5V, ID=3.6A - - 85 mΩ
=2.5V, ID=3.1A - - 115 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V
Forward Transconductance VDS=5V, ID=3.6A - 6 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
VDS=20V, VGS=0V - - 1
VDS=20V ,VGS=0V - - 10
Gate-Source Leakage VGS=±12V - - ±100
Total Gate Charge
2
ID=3.6A - 4.4 Gate-Source Charge VDS=10V - 0.6 Gate-Drain ("Miller") Charge VGS=4.5V - 1.9 Turn-on Delay Time
2
VDS=10V - 5.2 Rise Time ID=3.6A - 37 Turn-off Delay Time RG=6Ω,VGS=5V - 15 Fall Time RD=2.8Ω - 5.7 Input Capacitance VGS=0V - 145 Output Capacitance VDS=10V - 100 Reverse Transfer Capacitance f=1.0MHz - 50 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <
3.Surface mounted on 1 in
300us , duty cycle <2%.
2
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
1
=0V , VS=1.2V - - 1
D=VG
--10
IS=1.6A, VGS=0V - - 1.2 V
A
A
AP2302GN
I
10
TA=25oC
8
6
4
, Drain Current (A)
D
I
2
0
0.0 0.5 1.0 1.5 2.0 2.5
V
=2.0V
G
VDS , Drain-to-Source Voltage (V)
4.5V
3.5V
3.0V
2.5V
7
TA=150oC
6
5
4
3
, Drain Current (A)
D
I
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5
4.5V
3.5V
3.0V
2.5V
V
=2.0V
G
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
)
Ω
Ω
Ω
Ω
(m
R
DS(ON)
100
=3.1A
D
=25oC
T
90
80
70
A
Normalized R
DS(ON)
1.8
1.6
1.4
1.2
1.0
0.8
I
=3.6A
D
VG=4.5V
60
2345
VGS , Gate-to-Source Voltage (V)
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
10.0
1.0
(A)
F
I
T
=150oC
j
0.1
0.1 0.5 0.9 1.3
Tj=25oC
VSD , Source-to-Drain Voltage (V)
1.4
1.0
(V)
GS(th)
V
0.6
0.2
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
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