AP2301N-HF
Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Small Package Outline R
▼ Surface Mount Device I
▼ RoHS Compliant & Halogen-Free
SOT-23S
S
G
BV
DS(ON)
D
DSS
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters.
G
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
I
=25℃ A
D@TA
=70℃ A
I
D@TA
I
DM
P
T
T
=25℃ W
D@TA
STG
J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
3
, VGS @ 4.5V
1
Rating
- 20
12
+
-2.3
-1.8
-10
1
-55 to 150
-55 to 150
-20V
130mΩ
-2.3A
D
S
V
V
A
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
125 ℃/W
1
201112071
AP2301N-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
Static Drain-Source On-Resistance2VGS=-4.5V, ID=-2A - - 130 mΩ
=-2.5V, ID=-1A - - 190 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -0.3 -0.7 -1.2 V
Forward Transconductance VDS=-5V, ID=-2A - 7 - S
Drain-Source Leakage Current
V
=-16V, VGS=0V - - -10
DS
Gate-Source Leakage VGS= +12V, VDS=0V - - +30
Total Gate Charge ID=-2A - 6 9.6
Gate-Source Charge VDS=-10V - 1 Gate-Drain ("Miller") Charge VGS=-4.5V - 1.7 Turn-on Delay Time VDS=-10V - 7 Rise Time ID=-1A - 16 Turn-off Delay Time RG=3.3Ω -21Fall Time VGS=-5V - 5 Input Capacitance VGS=0V - 520 830
Output Capacitance VDS=-10V - 70
Reverse Transfer Capacitance f=1.0MHz - 55 -
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time IS=-2A, VGS=0V, - 14 Reverse Recovery Charge dI/dt=100A/µs - 6 -
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board, t < 5s ; 350℃/W when mounted on min. copper pad.
2
IS=-0.83A, VGS=0V - - -1.2 V
ns
nC
2
AP2301N-HF
I
I
12
TA=25oC
10
-5.0V
-4.5V
-3.5V
-2.5V
8
V
= -2.0V
6
, Drain Current (A)
4
D
-I
2
0
012345
G
-VDS , Drain-to-Source Voltage (V)
12
=150oC
T
A
10
-5.0V
-4.5V
-3.5V
-2.5V
8
6
, Drain Current (A)
4
D
-I
2
0
012345
65mΩ
VG= -2.0V
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
2
= -2A
D
V
= -4.5V
1.6
GS
DS(ON)
1.2
0.8
Normalized R
)
Ω
(m
R
DS(ON)
150
= -1A
D
T
=25oC
130
110
90
A
70
50
123456
-VGS , Gate-to-Source Voltage (V)
0.4
0
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
(A)
S
-I
4
3
Tj=25oCTj=150oC
2
1
(V)
GS(th)
Normalized -V
2
1.6
1.2
0.8
0.4
ID= -250uA
2.01E+08
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
0
-50 0 50 100 150
Tj, Junction Temperature ( oC)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP2301N-HF
g
I
DC
f
8
= -2A
D
V
= -10V
DS
6
4
, Gate to Source Voltage ( V)
2
GS
-V
0
0246810
QG , Total Gate Charge (nC)
800
600
65mΩ
C (pF)
400
200
0
1 5 9 13 17 21 25
-VDS , Drain-to-Source Voltage (V)
=1.0MHz
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
10
Operation in this area
limited by R
(A)
D
1
-I
0.1
DS(ON)
TA=25oC
Single Pulse
0.01
0.01 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
1
)
thja
DUTY=0.5
0.2
0.1
0.1
0.05
P
0.02
0.01
Single Pulse
0.01
DM
t
Duty factor = t/T
Peak T
= PDM x R
j
Rthja = 350℃/W
T
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fi
4
3
10. Effective Transient Thermal Impedance
V
G
Q
G
-4.5V
2
, Drain Current (A)
D
-I
1
Q
GS
Q
GD
Charge
0
25 50 75 100 125 150
TA , Ambient Temperature ( oC )
Fig 11. Maximum Continuous Drain Fig 12. Gate Charge Waveform
Current v.s. Ambient Temperature
Q
4
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