Advanced Power
A
Electronics Corp.
P-channel Enhancement-mode Power MOSFET
AP2301GN-HF-3
Simple Drive Requirement
Lower On-resistance
Surface Mount Device R 130mΩ
G
RoHS-compliant, halogen-free I -2.6A
Description
dvanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP2301GN-HF-3 is in the popular SOT-23 small surface-mount package
which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in medium current applications such as
load switches and DC-DC converters.
D
BV -20V
DSS
DS(ON)
S
D
D
SOT-23
S
G
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
at T =25°C -2.6 A
I Continuous Drain Current
D A
I
at T = 70°C -2.1 A
D A
I
DM
at TA=25°C
P Total Power Dissipation 1.38 W
D
T
STG
T Operating Junction Temperature Range -55 to 1
J
Drain-Source Voltage -20 V
Gate-Source Voltage +
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor 0.01 W/°C
Storage Temperature Range
Parameter Rating
12 V
3
3
1
-10 A
-55 to 150 °C
50 °C
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Parameter
90 °C/W
Ordering Information
AP2301GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2010 Advanced Power Electronics Corp. USA 200902046-3
www.a-powerusa.com
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Electrical Specifications
at T
=25°C (unless otherwise specified)
j
AP2301GN-HF-3
Symbol Parameter Test Conditions
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
Static Drain-Source On-Resistance2VGS=-5V, ID=-2.8A - - 130 mΩ
V
=-2.8V, ID=-2.0A - - 190 mΩ
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.25 V
Forward Transconductance VDS=-5V, ID=-2A - 4 - S
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
V
=-20V, VGS=0V - - -1
DS
VDS=-16V, VGS=0V - - -10
Gate-Source Leakage VGS=±12V, VDS=0V - - ±100
Total Gate Charge
2
ID=-2A - 5 9
Gate-Source Charge VDS=-16V - 1 Gate-Drain ("Miller") Charge VGS=-4.5V - 2 Turn-on Delay Time
2
VDS=-10V - 6 Rise Time ID=-1A - 17 Turn-off Delay Time RG=3.3Ω, VGS=-10V - 16 -
Fall Time RD=10Ω -5-
Input Capacitance VGS=0V - 270 Output Capacitance VDS=-20V - 70 Reverse Transfer Capacitance f=1.0MHz - 55 Gate Resistance f=1.0MHz - 10 15
Min. Typ. Max. Units
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
1
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width < 300µs , duty cycle < 2%
2
3. Surface mounted on 1in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board; 270°C/W when mounted on minimum copper pad.
=0V , VS=-1.2V - - -1
D=VG
- - -10
Tj=25°C, IS=-1.6A, VGS=0V - - -1.2 V
A
A
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Typical Electrical Characteristics
AP2301GN-HF-3
10
V
= -5V
TA=25oC
8
6
4
, Drain Current (A)
D
-I
2
0
0123456
GS
V
= -4V
GS
= -3V
V
GS
V
= -2V
GS
-VDS , Drain-to-Source Voltage (V)
10
V
= -5V
TA=150oC
8
GS
V
= -4V
GS
VGS= -3V
6
4
, Drain Current (A)
D
-I
2
0
0123456
= -2V
V
GS
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
240
ID= -2A
T
=25°C
200
(Ω)
160
DS(ON)
R
120
A
DS(ON)
Normalized R
1.8
1.6
1.4
1.2
1
0.8
ID= -2.8A
= -5V
V
GS
80
0246810
-VGS , Gate-to-Source Voltage (V)
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance
Gate Voltage
10
(A)
S
1
-I
0
0.1 0.3 0.5 0.7 0.9 1.1 1.3
-VSD , Source-to-Drain Voltage (V)
Tj=25oCTj=150oC
vs. Junction Temperature
1.5
(V)
1.0
GS(th)
0.5
Normalized -V
0.0
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature
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f
z
DC
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP2301GN-HF-3
5
4
ID = -2A
V
= -16V
3
2
, Gate to Source Voltage (V)
GS
1
-V
0
0123456
DS
QG , Total Gate Charge (nC)
1000
100
C (pF)
10
5 9 13 17 21
1
-VDS , Drain-to-Source Voltage (V)
=1.0MH
C
iss
C
oss
C
rss
25
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
10
(A)
1
D
-I
0.1
TA =25 °C
Single Pulse
0.01
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
1
)
thja
0.1
0.01
Duty factor=0.5
0.2
0.1
0.05
0.01
Single Pulse
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1
1 10
t , Pulse Width (s)
P
DM
t
T
Duty factor = t/T
= PDM x R
Peak T
j
R
= 270°C/W
thja
+ T
thja
a
100 1000
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
V
V
DS
90%
G
Q
G
-4.5V
Q
GS QGD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Q
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Package Dimensions: SOT-23
AP2301GN-HF-3
D
D1
3
1 2
e
A1
E1
SYMBOLS
A 1.00 1.15 1.30
A1 0.00 -- 0.10
A2 0.10 0.15 0.25
E
A2
D1 0.30 0.40 0.50
e 1.70 2.00 2.30
D 2.70 2.90 3.10
E 2.40 2.65 3.00
E1 1.40 1.50 1.60
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
Millimeters
MIN NOM MAX
Marking Information: SOT-23
Product: N1 = AP2301GN-HF-3
N1XX
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Date/lot code
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to standard YYWW date code format,
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