AP2301GN
RoHS-compliant Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline R
D
▼ Surface Mount Device I
BV
DS(ON)
D
DSS
S
Description
SOT-23
G
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
I
=25℃ A
D@TA
=70℃ A
I
D@TA
I
DM
P
=25℃ W
D@TA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Parameter
3
3
1
Linear Derating Factor
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 20
12
+
-2.6
-2.1
-10
1.38
0.01
-55 to 150
-55 to 150
-20V
130mΩ
- 2.6A
D
S
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
90 ℃/W
1
200902047
AP2301GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
Static Drain-Source On-Resistance2VGS=-5V, ID=-2.8A - - 130 mΩ
=-2.8V, ID=-2.0A - - 190 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.25 V
Forward Transconductance VDS=-5V, ID=-2A - 4 - S
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
V
=-20V, VGS=0V - - -1
DS
VDS=-16V, VGS=0V - - -10
Gate-Source Leakage VGS=+12V, VDS=0V - - +100
Total Gate Charge
2
ID=-2A - 5 9
Gate-Source Charge VDS=-16V - 1 -
Gate-Drain ("Miller") Charge VGS=-4.5V - 2 -
Turn-on Delay Time
2
VDS=-10V - 6 -
Rise Time ID=-1A - 17 -
Turn-off Delay Time RG=3.3Ω,VGS=-10V - 16 -
Fall Time RD=10Ω -5-
Input Capacitance VGS=0V - 270 -
Output Capacitance VDS=-20V - 70 -
Reverse Transfer Capacitance f=1.0MHz - 55 -
Gate Resistance f=1.0MHz - 10 15
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
1
=0V , VS=-1.2V - - -1
D=VG
- - -10
Tj=25℃, IS=-1.6A, VGS=0V - - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
A
A
2
AP2301GN
I
10
= -5V
V
TA=25oC
8
6
4
, Drain Current (A)
D
-I
2
0
0123456
GS
V
= -4V
GS
= -3V
V
GS
= -2V
V
GS
-VDS , Drain-to-Source Voltage (V)
10
V
= -5V
TA=150oC
8
6
4
, Drain Current (A)
D
-I
2
0
0123456
GS
= -4V
V
GS
V
= -3V
GS
= -2V
V
GS
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
240
ID= -2A
T
=25
℃
200
)
Ω
(
160
DS(ON)
R
120
A
1.8
= -2.8A
D
V
= -5V
GS
1.6
1.4
DS(ON)
1.2
1
Normalized R
0.8
80
0246810
-VGS , Gate-to-Source Voltage (V)
0.6
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
10
1
(A)
S
-I
0
0.1 0.3 0.5 0.7 0.9 1.1 1.3
Tj=25oCTj=150oC
-VSD , Source-to-Drain Voltage (V)
1.5
(V)
1.0
GS(th)
0.5
Normalized -V
0.0
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP2301GN
f
z
DC
5
4
ID= -2A
V
= -16V
3
2
, Gate to Source Voltage ( V)
GS
1
-V
0
0123456
DS
QG , Total Gate Charge (nC)
1000
C (pF)
100
10
1 5 9 13 17 21 25
-VDS , Drain-to-Source Voltage (V)
=1.0MH
C
iss
C
oss
C
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
10
(A)
D
1
-I
0.1
TA=25°C
Single Pulse
0.01
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
1
0.1
0.05
0.01
0.2
Duty factor=0.5
Single Pulse
P
DM
t
T
Duty factor = t/T
= PDM x R
Peak T
j
R
= 270℃/W
thja
)
thja
0.1
0.01
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
V
V
DS
G
90%
Q
G
-4.5V
GS
Q
GD
Q
10%
V
GS
t
d(on)
t
r
t
d(off)tf
Charge
Q
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
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