Apec AP2301EN-HF Schematics

AP2301EN-HF
Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET
Capable of 2.5V Gate Drive
D
Small Package Outline R Surface Mount Device I
RoHS Compliant & Halogen-Free
SOT-23S
S
G
BV
DS(ON)
D
DSS
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness.
The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
I
=25 A
D@TA
=70 A
I
D@TA
I
DM
P
T
T
=25 W
D@TA
STG
J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
3
, VGS @ 4.5V
3
, VGS @ 4.5V
1
Rating
- 20
12
+
-2.3
-1.8
-10
1
-55 to 150
-55 to 150
-20V
-2.3A
D
S
V
V
A
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
125 /W
1
201112141
AP2301EN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
Static Drain-Source On-Resistance2VGS=-4.5V, ID=-2A - - 130 m
=-2.5V, ID=-1A - - 190 m
V
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -0.3 -0.7 -1.2 V
Forward Transconductance VDS=-5V, ID=-2A - 7 - S
Drain-Source Leakage Current
V
=-16V, VGS=0V - - -10
DS
Gate-Source Leakage VGS= +12V, VDS=0V - - +30
Total Gate Charge ID=-2A - 6 9.6
Gate-Source Charge VDS=-10V - 1 -
Gate-Drain ("Miller") Charge VGS=-4.5V - 1.7 -
Turn-on Delay Time VDS=-10V - 7 -
Rise Time ID=-1A - 16 -
Turn-off Delay Time RG=3.3Ω -21-
Fall Time VGS=-5V - 5 -
Input Capacitance VGS=0V - 520 830
Output Capacitance VDS=-10V - 70
Reverse Transfer Capacitance f=1.0MHz - 55 -
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time IS=-2A, VGS=0V, - 14 -
Reverse Recovery Charge dI/dt=100A/µs - 6 -
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board, t < 5s ; 350/W when mounted on min. copper pad.
2
IS=-0.83A, VGS=0V - - -1.2 V
ns
nC
2
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