Apec AP2301AGN-HF Schematics
AP2301AGN-HF
Halogen-Free Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline R
▼ Surface Mount Device I
▼ RoHS Compliant & Halogen-Free
SOT-23
G
BV
DSS
DS(ON)
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
G
The SOT-23 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ A
I
D@TA
=70℃ A
I
D@TA
I
DM
P
T
T
=25℃ W
D@TA
STG
J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
3
, VGS @ 4.5V
3
, VGS @ 4.5V
1
Rating
- 20
8
+
-3.3
-2.7
-15
1.38
-55 to 150
-55 to 150
-20V
97mΩ
- 3.3A
D
S
V
V
A
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
90 ℃/W
1
201303084
AP2301AGN-H
F
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
Static Drain-Source On-Resistance2VGS=-4.5V, ID=-3A - - 97 mΩ
=-2.5V, ID=-2.6A - - 130 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=-250uA -0.3 - -1 V
Forward Transconductance VDS=-5V, ID=-3A - 10 - S
Drain-Source Leakage Current
V
=-16V, VGS=0V - - -10
DS
Gate-Source Leakage VGS= +8V, VDS=0V - - +100
Total Gate Charge ID=-3A - 8.5 21
Gate-Source Charge VDS=-10V - 1.2 Gate-Drain ("Miller") Charge VGS=-4.5V - 3 Turn-on Delay Time VDS=-10V - 10 Rise Time ID=-1A - 20 Turn-off Delay Time RG=3.3Ω -27Fall Time VGS=-5V - 22 Input Capacitance VGS=0V - 660 1470
Output Capacitance VDS=-10V - 135
Reverse Transfer Capacitance f=1.0MHz - 120 -
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Gate Resistance f=1.0MHz - 7.2 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time IS=-3A, VGS=0V, - 24 Reverse Recovery Charge dI/dt=100A/µs - 11 -
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad.
2
IS=-0.8A, VGS=0V - - -1.2 V
ns
nC
2
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