ANPEC APM9968COC-TR Datasheet
APM9968C
N-Channel Enhancement Mode MOSFET
Features
• 20V/6A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
TSSOP-8 Packages
••
=16mΩ(typ.) @ VGS=4.5V
DS(ON)
=20mΩ(typ.) @ VGS=2.5V
DS(ON)
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
• Zener Diode Protected Gate Provide
Human Body Mode Electrostatic Discharge
Protection to 2500 V.
Pin Description
1
2
S1
3
S1
45
G1 G2
TSSOP-8
D
G1
N-Channel MOSFET
G2
S1 S2
S1
8D
D
7
S2
6
S2
D
S2
Ordering and Marking Information
APM9968 C
Handling Code
Temp. Range
Package Code
APM9968C O :
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
APM9968C
XXXXX
Package Code
O : TSSOP -8
Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
XXXXX - Date Co d e
°
www.anpec.com.tw1
APM9968C
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
P
D
T
J
T
STG
R
*
JA
θ
Drain-Source Voltage 20
Gate-Source Voltage ±8
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 80
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (T
Parameter Rating Unit
TA=25°C
T
=100°C
A
= 25°C unless otherwise noted)
A
= 25°C unless otherwise noted)
A
1
0.4
V
A
W
°C
°C
°C/W
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
Drain-Source Break d o wn
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=0.5A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
GS
V
DS
V
DS=VGS
V
GS
VGS=4.5V , IDS=6A
V
GS
V
DS
V
GS
Turn-on Delay Time
V
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
DD
V
GEN
=0V , IDS=250µA
=16V , VGS=0V 1 µA
, IDS=250µA
=±8V , VDS=0V
=2.5V , IDS=5.2A
=10V , IDS= 6A
=4.5V ,
=10V , IDS=6A ,
=4.5V , RG=6Ω
APM9968C
Min.
Typ. Max.
20 V
0.6 0.7 1
±10 µA
16 20
20 25
0.7 1.3
19 25
2
5
37 68
33 62
100 182
54 100
Unit
V
mΩ
V
nC
ns
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
www.anpec.com.tw2
APM9968C
Electrical Characteristics Cont. (T
Symbol Parameter Test Condition
C
C
C
Notes
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
=0V
V
GS
V
=15V
DS
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
APM9968C
Min.
Typ. Max.
1253
340
260
Unit
pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
www.anpec.com.tw3
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