ANPEC APM9966OC-TR, APM9966KC-TR, APM9966COC-TR, APM9966CKC-TR Datasheet
APM9966/C
Dual N-Channel Enhancement Mode MOSFET
Features Applications
• SOP-8
20V/6A , R
R
TSSOP-8
20V/6A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
• Reliable and Rugged
••
••
• SO-8 and TSSOP-8 Packages
••
=19mΩ(typ.) @ VGS=4.5V
DS(ON)
=27mΩ(typ.) @ VGS=2.5V
DS(ON)
=21mΩ(typ.) @ VGS=4.5V
DS(ON)
=29mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
APM9966
1
8D1
1
8S1
2
G1
S2
G2 D2
7
3
6
45
D1
2
D1
D2
S1
3
S1
45
G1 G2
D2
7
S2
6
S2
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
APM9966C
1
8D
1
8S1
2
G1
S2
G2 D
7
3
6
45
D
2
D
D
S1
3
S1
45
G1 G2
D
7
S2
6
S2
SO-8 TSSOP-8
D1 D1
G1
S1
D2 D2
G2
S2
G1
G2
S1D1S1
D2
S2
S2
SO-8 TSSOP-8
D
G1
S1
D
G2
S2
D
G1
S1
S1
D
G2
S2
S2
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
www.anpec.com.tw1
Rev. A.3 - Mar., 2003
APM9966/C
Ordering and Marking Information
APM9966 /C
Handling Code
Temp. Range
Package Code
APM9966/C K/O :
APM9966/C
XXXXX
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
P
D
Drain-Source Voltage 20
Gate-Source Voltage ±10
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20
Maximum Power Dissipation
Parameter Rating Unit
TA=25°C
T
=100°C
A
Package Code
K : SO-8 O : TSSOP-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
XXXXX - Date Code
= 25°C unless otherwise noted)
A
°
SO-8 1.6
TSSOP-8 1.0
SO-8 0.625
TSSOP-8 0.4
V
A
W
T
J
T
STG
R
jA
θ
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003
C
°
C
°
C/W
°
www.anpec.com.tw2
APM9966/C
Electrical Characteristics (Cont.) (T
A
Symbol Parameter Test Condition
Static
BV
V
Drain-Source Breakdown Voltage
DSS
I
Zero Gate Voltage Drain Current VDS=16V , VGS=0V 1
DSS
Gate Threshold Voltage
GS(th)
I
Gate Leakage Current
GSS
=0V , IDS=250µA
V
GS
V
V
, IDS=250µA
DS=VGS
=±10V , VDS=0V
GS
VGS=4.5V , IDS=6A
a
R
DS(ON)
a
V
SD
Dynamic
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Drain-Source On-state
SOP-8
Resistance
TSSOP-8
Diode Forward Voltage ISD=1.7A , VGS=0V
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Ris e Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
=2.5V , IDS=5.2A 27 33
GS
VGS=4.5V , IDS=6A
V
=2.5V , IDS=5.2A 29 35
GS
=10V , IDS= 1A
V
DS
V
=4.5V ,
GS
=10V , IDS=1A ,
V
DD
V
=4.5V , RG=0.2
GEN
V
=0V
GS
V
=15V
DS
Frequency=1.0MHz
= 25°C unless otherwise noted)
APM9966/C
Min. Typ. Max.
20 V
0.5 0.7 1
100
±
19 23
21 25
0.8 1.1
14 18
3.5
2.1
25 47
22 42
Ω
67 122
36 67
780
165
105
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003
www.anpec.com.tw3
APM9966/C
Typical Characteristics
Output Characteristics
20
VGS=2,3,4,5,6,7,8,9,10V
16
12
8
ID-Drain Current (A)
4
0
012345
1V
0.5V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
1.25
Transfer Characteristics
20
15
10
ID-Drain Current (A)
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
TJ=25°C
TJ=-55°C
TJ=125°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.05
0.04
SOP-8
1.00
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003
0.03
0.02
0.01
RDS(ON)-On-Resistance (Ω)
0.00
048121620
VGS=4.5V
VGS=2.5V
ID - Drain Current (A)
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