ANPEC APM9953KC-TU, APM9953KC-TR Datasheet

APM9953

P-Channel Enhancement Mode MOSFET

Features

• -20V/-3A , R

R

••

• Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

• Reliable and Rugged

••

••

• SOP-8 Package

••

=75mΩ(typ.) @ V

DS(ON)

=90mΩ(typ.) @ V

DS(ON)

=-10V

GS

=-4.5V

GS

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

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P-Channel MOSFET

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APM 9953

Handling Code

Te m p . R an ge

Package Code

AP M 9953 K :

APM9953
XXXXX

Absolute Maximum Ratings

Package Code
K : S O -8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tu be
TR : Ta pe & R e el

XXXXX - Date Code

(T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

Drain-Source Voltage -20

DSS

V

Gate-Source Voltage ±10

GSS

*

I

Maximum Drain Current  Continuous -3

D

IDM Maximum Drain Current  Pulsed -12

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2003

www.anpec.com.tw1

APM9953

q

Absolute Maximum Ratings Cont. (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD Maximum Power Dissipation

T

=25°C

A

=100°C

T

A

2.5

1.0

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

*

R

θ

JA

Thermal Resistance  Junction to Ambient 62.5

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM9953

Min.

Typ. Max.

Static

BV

V

R

DS(ON)

V

I

DSS

GS(th)

I

GSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

=

Resistance

=

Diode Forward Voltage ISD=-0.5A , VGS=0V

SD

=0V , I

V

GS

V

DS

V

DS=VGS

V

GS

DS

=-16V , V

, I

DS

=±8V , V

VGS=-10V , IDS=-3A

=-4.5V , IDS=-2A

V

GS

=-250µA

=0V -1 µA

GS

=-250µA

=0V

DS

-20

-0.5 -0.7 -1

±100

76 100

93 125

-0.7 -1.3

Dynamic>

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

t

Turn-on Delay Time

d(ON)

Tr Turn-on Rise Time

t

Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

=-10V , IDS=-3A

V

DS

V

=-4.5V

GS

V

=-10V , IDS=-3A ,

DD

V

=-4.5V , R

GEN

VGS=0V

V

=-15V

DS

Fre

uency=1.0MHz

=6Ω

G

5.3 6.9

1.04

0.62

13 21.5

36 56

45 69.5

37 57.5

552

118

76

W

°C
°C

°C/W

Unit

V

V

nA

mΩ

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2003

www.anpec.com.tw2

APM9953

Typical Characteristics

Output Characteristics

12

-VGS= 3,4,5,6,7,8,9,10V

10

8

6

4

-ID-Drain Current (A)

2

0

012345678910



-VGS=2V

-VGS=1.5V

-VGS=1V

-VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25



-IDS =250µA

Transfer Characteristics

12

10

8



6

4

Tj=25oC



Tj=125oC



Tj=-55oC

-ID-Drain Current (A)

2

0

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

-VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.11

0.10



-VGS=4.5V

1.00

0.75

(Normalized)

0.50

-VGS(th)-Threshold Voltage (V)

0.25

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - July., 2003

0.09





0.08

0.07

DS(ON)-On-Resistance (Ω)

R

0.06
0246810

-VGS=10V

-ID - Drain Current (A)

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