ANPEC APM9932KC-TR, APM9932CKC-TR Datasheet

Dual Enhancement Mode MOSFET (N-and P-Channel)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM9932/C

• N-Channel

20V/15A, R

DS(ON)

=12mΩ(typ.) @ VGS=10V

R

DS(ON)

=17mΩ(typ.) @ VGS=4.5V

• P-Channel

-20V/-6A, R

DS(ON)

=30mΩ(typ.) @ VGS=-4.5V

R

DS(ON)

=45mΩ(typ.) @ VGS=-2.5V

••

••

• Super High Dense Cell Design for Extremely

Low R

DS(ON)

••

••

• Reliable and Rugged

••

••

• SO-8 Package

Pin Description

Ordering and Marking Information

Features

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

SO-8

1
2
3
45

6

7

8S1
G1
S2
G2 D2

D2

D1

D1

G1

S1

D1 D1

APM9932 /C

Handling Code
Temp. Range
Package Code

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

°

APM9932/C K :

APM9932/C
XXXXX

XXXXX - Date Code

N-Channel MOSFET

P-Channel MOSFET

G2

S2

D2 D2

APM9932

SO-8

1

2

3

45

6

7

8S1

G1

S2

G2 D

D

D

D

G1

S1

G2

S2

D

APM9932C

N- and P-Channel

MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw2

APM9932/C

APM9932/C

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

N-Ch

20

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V , IDS=250µA

P-Ch

-20

V

VDS=18V , VGS=0V

N-Ch

1

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=-18V , VGS=0V

P-Ch

-1

µ

A

VDS=VGS , IDS=250µA

N-Ch

0.6 1.3

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

P-Ch

-0.6 -1.3

V

VGS=±16V , VDS=0V

N-Ch

±100

I

GSS

Gate Leakage Current

V

GS

=±12V , VDS=0V

P-Ch

±100

nA

VGS=10V , IDS=9A

12 18

VGS=4.5V , IDS=7A

N-Ch

17 27

VGS=-4.5V , IDS=-6A

30 42

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=-2.5V , IDS=-5A

P-Ch

45 60

m

Ω

ISD=5A , VGS=0V N-Ch

0.6 1.3

V

SD

a

Diode Forward Voltage

I

SD

=-2A , VGS=0V P-Ch

-0.6 -1.3

V

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

Symbol

Parameter N-Channel P-Channel Unit

V

DSS

Drain-Source Voltage 20 -20

V

GSS

Gate-Source Voltage ±16 ±12

V

I

D

*

Maximum Drain Current – Continuous 15 -6

I

DM

Maximum Drain Current – Pulsed 30 -10

A

TA=25°C

2.5 2.5

P

D

Maximum Power Dissipation

T

A

=100°C

1.0 1.0

W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

jA

Thermal Resistance – Junction to Ambient 50

°

C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw3

APM9932/C

Notes

a

: Guaranteed by design, not subject to production testing

Electrical Characteristics (Cont.) (T

A

= 25°C unless otherwise noted)

APM9932/C

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Dynamic

a

N-Ch

14 22

Q

g

Total Gate Charge

P-Ch

19 25

N-Ch

5

Q

gs

Gate-Source Charge

P-Ch

4.1

N-Ch

2.8

Q

gd

Gate-Drain Charge

N-Channel
V

DS

=10V , IDS= 6A

V

GS

=4.5V
P-Channel
V

DS

=-4V , IDS=-1A
V

GS

=-4.5V

P-Ch

1.6

nC

N-Ch

612

t

d(ON)

Turn-on Delay Time

P-Ch

23 45

N-Ch

510

T

r

Turn-on Rise Time

P-Ch

45 80

N-Ch

16 40

t

d(OFF)

Turn-off Delay Time

P-Ch

45 90

N-Ch

520

T

f

Turn-of f Fall Time

N-Channel
V

DD

=10V , IDS=1A ,
V

GEN

=4.5V , RG=10

Ω

P-Channel
V

DD

=-4V , IDS=-1A ,
V

GEN

=-4.5V , RG=10

Ω

P-Ch

32 55

ns

N-Ch

1225

C

iss

Input Capacitance

P-Ch

1400

N-Ch

330

C

oss

Output Capacitance

P-Ch

520

N-Ch

220

C

rss

Reverse Transfer Capacitance

N-Channel
V

GS

=0V , VDS=15V
Frequency=1.0MHz
P-Channel
V

GS

=0V , VDS=-4V
Frequency=1.0MHz

P-Ch

320

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw4

APM9932/C

0 4 8 121620

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0246810

0

4

8

12

16

20

-50 -25 0 25 50 75 100 125 150

0.00

0.25

0.50

0.75

1.00

1.25

1.50

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

Typical Characteristics

VGS=2.5V

ID-Drain Current (A)

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

VGS - Gate-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

Tj - Junction T emperature (°C)

VGS(th)-Threshold Voltage (V)

(Normalized)

IDS=250uA

RDS(ON)-On-Resistance (Ω)

On-Resistance vs. Drain Current

ID - Drain Current (A)

VGS=4.5V

Output Characteristics

ID-Drain Current (A)

VGS=3,4,5,6,7,8,9,10V

VDS - Drain-to-Source V oltage (V)

VGS=10V

VGS=2V

N-Channel