ANPEC APM9930CKC-TR, APM9930KC-TR Datasheet

APM9930/C

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

• N-Channel

20V/15A, R
R
R

=12mΩ(typ.) @ VGS=10V

DS(ON)

=17mΩ(typ.) @ VGS=4.5V

DS(ON)

=25mΩ(typ.) @ VGS=2.5V

DS(ON)

• P-Channel

-20V/-5A, R
R
R

••

• Super High Dense Cell Design for Extremely

••

Low R

••

• Reliable and Rugged

••

••

• SO-8 Package

••

DS(ON)

=60mΩ(typ.) @ VGS=-10V

DS(ON)

=72mΩ(typ.) @ VGS=-4.5V

DS(ON)

=98mΩ(typ.) @ VGS=-2.5V

DS(ON)

Applications

Pin Description

APM9930

1
2

G1

3

S2

45

G2 D2

G1

N-Channel MOSFET

SO-8

D1 D1

S1

S2

8S1

D1

7

D1

6

D2

G1

APM9930C

1

2

G1

3

S2

45

G2 D

8S1

7

6

SO-8

D

G2

S1

S2

N- and P-Channel

MOSFET

D

D

D

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

G2

D2 D2

P-Channel MOSFET

Ordering and Marking Information

APM9930 /C

Handling Code
Temp. Range
Package Code

APM9930/C K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

APM9930/C
XXXXX

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

XXXXX - Date Code

°

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APM9930/C

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 20 -20
Gate-Source Voltage ±12 ±12
Maximum Drain Current – Continuous 15 -5
Maximum Drain Current – Pulsed 30 -10

Parameter N-Channel P-Channel Unit

= 25°C unless otherwise noted)

A

TA=25°C

P

T

T

STG

R

Maximum Power Dissipation

D

Maximum Junction Temperature 150

J

=100°C

T

A

Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50

jA

θ

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

Static

BV

I

DSS

Drain-Source Breakd o w n

DSS

Voltage
Zero Gate Voltage Drain

Current

V

=0V , IDS=250µA

GS

VDS=18V , VGS=0V

=-18V , VGS=0V

V

DS

VDS=VGS , IDS=250µA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

VGS=±12V , VDS=0V

I

GSS

Gate Leakage Current

=±10V , VDS=0V

V

GS

VGS=10V , IDS=15A
VGS=4.5V , IDS=5A

R

DS(ON)

Drain-Source On-state

a

Resistance

VGS=2.5V , IDS=2A
VGS=-10V , IDS=-5A
VGS=-4.5V , IDS=-3.2A
V

=-2.5V , IDS=-1A

GS

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

2.5 2.5

1.0 1.0

APM9930/C

Min. Typ. Max.

N-Ch
P-Ch

20

-20

N-Ch
P-Ch
N-Ch
P-Ch

0.6 1.3

-0.6 -1.3

N-Ch
P-Ch

N-Ch

P-Ch

1

-1

±100

±100
12 15
17 20
25 30
60 70
72 80
98 105

W

°
°

C/W

°

V

A

C
C

Unit

µ

nA

m

V

A

V

Ω

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM9930/C

Electrical Characteristics (Cont.) (T

A

Symbol Parameter Test Condition

a

V

SD

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

Diode Forward Voltage

a

Total Gate Charge

Gate-Source Charge

Gate-Drain Cha rg e

Turn-on Delay Time

ISD=5A , VGS=0V N-Ch
ISD=-2A , VGS=0V P-Ch

N-Channel
VDS=10V , IDS= 6A

=4.5V

V

GS

P-Channel
V

=-10V , IDS=-1A

DS

VGS=-4.5V
N-Channel

VDD=10V , IDS=1A ,
V

=4.5V , RG=10

T

Turn-on Rise Time

r

GEN

Ω

P-Channel

t

d(OFF)

C

Turn-off Delay Time

T

Turn-off Fall Time

f

Input Capacitance

iss

VDD=-10V , IDS=-1A ,
V

=-4.5V , RG=10

GEN

Ω

VGS=0V

C

Output Capacitance

oss

VDS=15V
Frequency=1.0MHz

C

Reverse Transfer Capacitance

rss

= 25°C unless otherwise noted)

APM9930/C

Min. Typ. Max.

0.6 1.3

-0.6 -1.3

N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch

14 22

6.8 16
5

3.6

2.8

1.08
612

21 42

510

45 85
16 40
36 80

520

20 40

1225

495
330
130
220

60

Unit

V

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

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APM9930/C

Typical Characteristics

N-Channel

Output Characteristics

20

VGS=3,4,5,6,7,8,9,10V

16

12

8

ID-Drain Current (A)

4

0

0246810

VGS=2.5V

VGS=2V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

IDS=250uA

Transfer Characteristics

20

15

10

ID-Drain Current (A)

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.030

1.25

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

0.025

0.020

0.015

0.010

0.005

RDS(ON)-On-Resistance (Ω)

0.000
0 4 8 121620

VGS=4.5V

VGS=10V

ID - Drain Current (A)

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