ANPEC APM9926OC-TR, APM9926KC-TR, APM9926COC-TR, APM9926CKC-TR Datasheet
APM9926/C
N-Channel Enhancement Mode MOSFET
Features Applications
• 20V/6A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
SO-8 and TSSOP-8 Packages
••
=28mΩ(typ.) @ VGS=4.5V
DS(ON)
=38mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
APM9926
1
8D1
1
8S1
D1
2
G1
S2
G2 D2
7
D1
3
6
D2
45
SO-8 TSSOP-8
D1 D1
2
S1
3
S1
45
G1 G2
D2
7
S2
6
S2
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
APM9926C
1
8D
1
8S1
D
2
G1
S2
G2 D
7
D
3
6
D
45
SO-8 TSSOP-8
D
2
S1
3
S1
45
G1 G2
D
7
S2
6
S2
D
G1
S1
D2 D2
G2
S2
G1
S1D1S1
D2
G2
S2
S2
G1
S1
D
G2
S2
G1
S1
S1
D
G2
S2
S2
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
www.anpec.com.tw1
Rev. A.6 - Sep., 2002
APM9926/C
Ordering and Marking Information
APM9926 /C
Handling Code
Temp. Range
Package Code
APM9926/C K/O :
APM9926/C
XXXXX
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
P
D
Drain-Source Voltage 20
Gate-Source Voltage ±10
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20
Maximum Power Dissipation
Parameter Rating Unit
TA=25°C
T
=100°C
A
Package Code
K : SO-8 O : TSSOP-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
XXXXX - Date Code
= 25°C unless otherwise noted)
A
°
SO-8 1.6
TSSOP-8 1.0
SO-8 0.625
TSSOP-8 0.4
V
A
W
T
J
T
STG
R
jA
θ
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 80
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
C
°
C
°
C/W
°
www.anpec.com.tw2
APM9926/C
Electrical Characteristics Cont. (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=1.7A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
GS
V
DS
V
DS=VGS
V
GS
VGS=4.5V , IDS=6A
V
GS
VDS=10V , IDS= 6A
V
GS
Turn-on Delay Time
V
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
DD
V
GEN
V
GS
V
DS
Frequency=1.0MHz
=0V , IDS=250µA
=16V , VGS=0V 1
, IDS=250µA
=±8V , VDS=0V
=2.5V , IDS=5.2A
=4.5V ,
=10V , IDS=1A ,
=4.5V , RG=0.2
=0V
=15V
= 25°C unless otherwise noted)
A
APM9926/C
Min. Typ. Max.
20 V
0.5 0.7 1.5
±
28 32
38 45
0.6 1.3
10
3.6
2
17
15
Ω
45
25
520
110
70
100
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw3
APM9926/C
Typical Characteristics
Output Characteristics
20
VGS=2,3,4,5,6,7,8,9,10V
16
12
8
ID-Drain Current (A)
4
0
012345
1V
0.5V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
1.25
Transfer Characteristics
20
15
10
ID-Drain Current (A)
5
0
0.0 0.5 1.0 1.5 2.0 2.5
TJ=25°C
TJ=125°C
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.040
0.035
1.00
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
0.030
0.025
0.020
RDS(ON)-On-Resistance (Ω)
0.015
0.010
0 5 10 15 20
VGS=4.5V
VGS=10V
ID - Drain Current (A)
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