APM9926/C
N-Channel Enhancement Mode MOSFET
Features Applications
• 20V/6A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
SO-8 and TSSOP-8 Packages
••
=28mΩ(typ.) @ VGS=4.5V
DS(ON)
=38mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
APM9926
1
8D1
1
8S1
D1
2
G1
S2
G2 D2
7
D1
3
6
D2
45
SO-8 TSSOP-8
D1 D1
2
S1
3
S1
45
G1 G2
D2
7
S2
6
S2
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
APM9926C
1
8D
1
8S1
D
2
G1
S2
G2 D
7
D
3
6
D
45
SO-8 TSSOP-8
D
2
S1
3
S1
45
G1 G2
D
7
S2
6
S2
D
G1
S1
D2 D2
G2
S2
G1
S1D1S1
D2
G2
S2
S2
G1
S1
D
G2
S2
G1
S1
S1
D
G2
S2
S2
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
www.anpec.com.tw1
Rev. A.6 - Sep., 2002
APM9926/C
Ordering and Marking Information
APM9926 /C
Handling Code
Temp. Range
Package Code
APM9926/C K/O :
APM9926/C
XXXXX
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
P
D
Drain-Source Voltage 20
Gate-Source Voltage ±10
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20
Maximum Power Dissipation
Parameter Rating Unit
TA=25°C
T
=100°C
A
Package Code
K : SO-8 O : TSSOP-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
XXXXX - Date Code
= 25°C unless otherwise noted)
A
°
SO-8 1.6
TSSOP-8 1.0
SO-8 0.625
TSSOP-8 0.4
V
A
W
T
J
T
STG
R
jA
θ
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 80
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
C
°
C
°
C/W
°
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APM9926/C
Electrical Characteristics Cont. (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=1.7A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
GS
V
DS
V
DS=VGS
V
GS
VGS=4.5V , IDS=6A
V
GS
VDS=10V , IDS= 6A
V
GS
Turn-on Delay Time
V
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
DD
V
GEN
V
GS
V
DS
Frequency=1.0MHz
=0V , IDS=250µA
=16V , VGS=0V 1
, IDS=250µA
=±8V , VDS=0V
=2.5V , IDS=5.2A
=4.5V ,
=10V , IDS=1A ,
=4.5V , RG=0.2
=0V
=15V
= 25°C unless otherwise noted)
A
APM9926/C
Min. Typ. Max.
20 V
0.5 0.7 1.5
±
28 32
38 45
0.6 1.3
10
3.6
2
17
15
Ω
45
25
520
110
70
100
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw3
APM9926/C
Typical Characteristics
Output Characteristics
20
VGS=2,3,4,5,6,7,8,9,10V
16
12
8
ID-Drain Current (A)
4
0
012345
1V
0.5V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
1.25
Transfer Characteristics
20
15
10
ID-Drain Current (A)
5
0
0.0 0.5 1.0 1.5 2.0 2.5
TJ=25°C
TJ=125°C
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.040
0.035
1.00
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
0.030
0.025
0.020
RDS(ON)-On-Resistance (Ω)
0.015
0.010
0 5 10 15 20
VGS=4.5V
VGS=10V
ID - Drain Current (A)
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APM9926/C
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
RDS(ON)-On-Resistance (Ω)
0.01
0.00
012345678910
VGS - Gate-to-Source V oltage (V)
Gate Charge
10
VDS=10V
ID=6A
8
6
4
2
VGS-Gate-Source Voltage (V)
ID=6A
On-Resistance vs. Junction T emperature
2.00
VGS=10V
ID=6A
1.75
1.50
1.25
1.00
0.75
(Normalized)
0.50
RDS(ON)-On-Resistance (Ω)
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Capacitance
750
625
500
375
250
Capacitance (pF)
125
Frequency=1MHz
Ciss
Coss
Crss
0
0 2 4 6 8 10 12 14 16 18
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
0
0 5 10 15 20
VDS - Drain-to-Source V oltage (V)
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APM9926/C
Typical Characteristics
Source-Drain Diode Forward Voltage
20
10
TJ=150°C
TJ=25°C
IS-Source Current (A)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain V oltage (V)
Normalized Thermal Transient Impedence, Junction to Ambient
Single Pulse Power
80
60
40
Power (W)
20
0
0.01 0.1 1 10
Time (sec)
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
Thermal Impedance
Normalized Effective Transient
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
D=0.02
SINGLE PULSE
0.01
1E-4 1E-3 0.01 0.1 1 10
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=80°C/W
3.TJM-TA=PDMZthJA
Square Wave Pulse Duration (sec)
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APM9926/C
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
HE
0.015X45
e1 e2
D
A1
A
1
L
0.004max.
Dim
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244
L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0. 013 0.020
e2 1.27BSC 0.50BSC
18
φ
Millimeters Inches
Min. Max. Min. Max.
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw7
APM9926/C
φ
φ
φ
Packaging Information
TSSOP-8
e
8
7
2 x E / 2
(2)
S
(L1)
GAUGE
PLANE
L
1
Dim
12
b
E1 E
e/2
D
A2
A
A1
0.25
(3)
Millimeters Inches
Min. Max. Min. Max.
A 1.2 0.047
A1 0.00 0.15 0.000 0.006
A2 0.80 1.05 0.031 0.041
b 0.19 0.30 0.007 0.012
D 2.9 3.1 0.114 0.122
e 0.65 BSC 0.026 BSC
E 6.40 BSC 0.252 BSC
E1 4.30 4.50 0.169 0.177
L 0.45 0.75 0.018 0.030
L1 1.0 REF 0.039REF
R 0.09 0.004
R1 0.09 0.004
S 0.2 0.008
10
212
312
°
REF 12° REF
°
REF 12° REF
°
8
°
0
°
8
°
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
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APM9926/C
Physical Specifications
Terminal Material Solder-Plated Cop per (S olde r Ma te rial : 90/10 or 63/37 SnPb )
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Peak temperature
temperature
Pre-heat temperature
°
183 C
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Tem perat ure m aintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature
120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.
VPR
Package Re flow Conditions
pkg. thickness ≥≥≥≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
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APM9926/C
Reliability test program
T est item Method Description
SOLDERABILITY MIL-STD-883D-2 003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
P
P1
Ao
J
W
E
Po
F
A
t
D
Bo
D1
Ko
T2
C
B
T1
A pp lication A B C J T1 T2 W P E
330 ± 162 +1.5
F D D1 Po P1 Ao Bo Ko tSOP- 8
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013
A pp lication A B C J T1 T2 W P E
330 ± 162 +1.5
F D D1 Po P1 Ao Bo Ko tTSSOP-8
5.5 ± 0. 1 1 .5 + 0 .1 1.5 + 0. 1 4.0 ± 0.1 2.0 ± 0.1 7.0 ± 0.1 3.6 ± 0.3 1.6 ± 0.1 0.3±0.013
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
12.75+
0.15
12.75+
0.15
2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
2 + 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
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APM9926/C
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOP- 8
TSSOP- 8
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
12 9.3 2500
12 9.3 2500
Copyright ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
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