ANPEC APM9926AOC-TR, APM9926AKC-TR Datasheet
Dual N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM9926A
Features
Applications
• 20V/6A , R
DS(ON)
=28mΩ(typ.) @ VGS=4.5V
R
DS(ON)
=38mΩ(typ.) @ VGS=2.5V
••
••
•
Super High Dense Cell Design for Extremely
Low R
DS(ON)
••
••
•
Reliable and Rugged
••
••
•
SO-8 and TSSOP-8 Packages
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Pin Description
SO-8 TSSOP-8
1
2
3
45
6
7
8S1
G1
S2
G2 D
D
D
D
1
2
3
45
6
7
8D
S1
S1
G1 G2
S2
S2
D
G1
S1DS1
G2
S2
D
S2
G2
S2
DD
G1
S1
DD
Ordering and Marking Information
APM9926A
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8 O : TS S OP -8
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
°
APM 9926A K/O :
APM 9926A
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Rating Unit
V
DSS
Drain-Source Voltage 20
V
GSS
Gate-Source Voltage ±10
V
I
D
*
Maximum Drain Current – Continuous 6
I
DM
Maximum Drain Current – Pulsed 20
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
www.anpec.com.tw2
APM9926A
Absolute Maximum Ratings (Cont.) (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Rating Unit
SO-8 1.6
TA=25°C
TSSOP-8 1.0
SO-8 0.625
P
D
Maximum Power Dissipation
T
A
=100°C
TSSOP-8 0.4
W
T
J
Maximum Junction Temperature 150
°
C
T
STG
Storage Temperature Range -55 to 150
°
C
R
θ
jA
Thermal Resistance – Junction to Ambient 80
°
C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
APM9926A
Symbol Parameter Test Condition
Min. Typ. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltag e
V
GS
=0V , IDS=250µA
20 V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=16V , VGS=0V 1
µ
A
V
GS(th)
Gate Threshold Voltage
V
DS=VGS
, IDS=250µA
0.5 0.7 1.5
V
I
GSS
Gate Leakage Current
V
GS
=±10V , VDS=0V
±
100
nA
VGS=4.5V , IDS=6A
28 32
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , IDS=5.2A
38 45
m
Ω
V
SD
a
Diode Forward Voltage ISD=1.7A , VGS=0V
0.7 1.3
V
Dynamic
b
Q
g
Total Gate Charge
10 12
Q
gs
Gate-Source Charge
3.6
Q
gd
Gate-Drain Charge
VDS=10V , IDS= 6A
V
GS
=4.5V ,
2
nC
t
d(ON)
Turn-on Delay Time
17
T
r
Turn-on Rise Time
15
t
d(OFF)
Turn-off Delay Time
45
T
f
Turn-off Fall Time
V
DD
=10V , IDS=1A ,
V
GEN
=4.5V , RG=0.2
Ω
25
ns
C
iss
Input Capacitance
520
C
oss
Output Capacitance
110
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
70
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
www.anpec.com.tw3
APM9926A
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
5
10
15
20
0 5 10 15 20
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0.055
0.060
012345
0
4
8
12
16
20
Typical Characteristics
0.5V
ID-Drain Current (A)
Transfer Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
VGS - Gate-to-Source Voltage (V)
-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (°C)
VGS(th)-Threshold Voltage (V)
(Normalized)
IDS=250uA
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Drain Current
ID - Drain Current (A)
VGS=4.5V
Output Characteristics
ID-Drain Current (A)
VGS=2,3,4,5,6,7,8,9,10V
1V
VDS - Drain-to-Source Voltage (V)
VGS=2.5V
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