ANPEC APM9435KC-TR, APM9435KC-TU Datasheet

APM9435

P-Channel Enhancement Mode MOSFET

Features

• -30V/-4.6A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 52mΩ(typ.) @ VGS = -10V

DS(ON)

= 80mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM 9435

Handling C ode
Temp. Range
Package Code

APM 9435

APM 9435
XXXXX

Absolute Maximum Ratings (T

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R e e l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

Drain-Source Voltage -30
Gate-Source Voltage ±25
Maximum Drain Current – Continuous

= 25°C

T

A

-4.6

Maximum Drain Current – Pulsed -20

V

A

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APM9435

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

T

J

)

R

JA

θ

Electrical Characteristics (T

Maximum Power Dissipation

Maximum Operating and Storage Junction Temperature -55 to 150

STG

TA = 25°C
T

= 100°C

A

Thermal Resistance - Junction to Ambient 50 °C/W

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

2.5

1.0

APM9435

Min. Typ

a

.

Max.

Static

BV

DSS

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

SD

Dynamic

Q

g

Q

gs

Q

gd

t

d(ON)

t

r

t

d(OFF)

t

f

C

iss

C

oss

C

rss

Drain-Source Breakdown Voltage

=0V, ID=-250µA

V

GS

Zero Gate Voltage Drain Current VDS=24V, VGS=0V -1 uA
Gate T hr es hold Voltage

V

DS=VGS

Gate Leakage Current VGS=±25V, V

VGS=-10V, ID=-4.6A 52 60

Drain-Source On-state Resistance

b

, ID=250µA

=0V ±100 nA

DS

VGS=-4.5V, ID=-2A

Diode Forward Voltage

a

b

ISD=-3A, VGS=0V -0.6 -1.3 V

Total Gate Charge 22.5 29

V

=-15V, VGS=-10V,

Gate-Source Charge 4.5
Gate-Drain Charge

DS

I

=-4.6A

D

Turn - on D elay Ti me 8 17

=-25V, RL=12.5Ω,

V

Turn - on Rise Ti me 8 18
Turn-off D elay Time 35 60
Turn-off F all Tim e

DD

I

=-2A , V

D

=6Ω,

R

G

GEN

=-10V,

Input Ca p a c ita nc e 845

V

=0V, VDS=-25V

Output Capacitance 120

GS

Frequency = 1.0MHZ

Reverse Transfer Capacitance

-30 V

-1 -3 V

80 95

2

11 28

80

W

°

C

Unit

m

nC

ns

pF

Ω

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

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APM9435

Typical Characteristics

Output Characteristics

20

15

10

-ID-Drain Current (A)

5

0

0246810

-VGS=5,6,7,8,9,10V

-VGS=4V

-VGS=3V

-VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

-IDS=250µA

Transfer Characteristics

20

15

10

TJ=25°C

-ID-Drain Current (A)

5

0

TJ=125°C

012345

-V

GS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.16

0.14

0.12

0.10

RDS(on)-On-Resistance (Ω)

0.08

0.06

0.04

0.02

TJ=-55°C

-VGS=4.5V

-VGS=10V

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003

0.00

0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0

-ID - Drain Current (A)

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