ANPEC APM9430KC-TU, APM9430KC-TR Datasheet
APM9430
N-Channel Enhancement Mode MOSFET
Features
• 20V/4A, R
R
••
• Super High Density Cell Design
••
••
• Reliable and Rugged
••
••
• SO-8 Package
••
= 40mΩ(typ.) @ VGS = 4.5V
DS(ON)
= 110mΩ(typ.) @ VGS = 2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
1
S
S
GD
2
3
45
8S
7
6
D
D
D
SO − 8
D DDD
G
SSS
N-Channel MOSFET
APM 9430
Handling Code
Temp. Range
Package Code
APM 9430
APM 9430
XXXXX
Absolute Maximum Ratings (T
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R e e l
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
DSS
V
GSS
I
D
I
DM
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
Drain-Source Voltage 20
Gate-Source Voltage ±16
Maximu m D rain Curren t – Continuou s
= 25°C
T
A
4
Maximum Drain Current – Pulsed 15
V
A
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APM9430
Absolute Maximum Ratings (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
P
D
T
J
T
STG
R
JA
θ
Maximum Power Dissipation
TA = 25°C
T
= 100°C
A
Maximum Junction Temperature 150
Storage Temperature Ran ge -55 to 150
Thermal Resistance - Junction to Ambient 50 °C/W
2.5
1.0
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol Parameter Test Condition
Static
T
T
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=2A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain C h a rge
gd
V
GS
V
DS
V
DS=VGS
V
GS
VGS=4.5V , IDS=4A
V
GS
V
DS
I
=1A
D
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
V
DD
V
GEN
V
GS
Frequency=1.0MHz
=0V , IDS=250µA
=18V , VGS=0V 1
, IDS=250µA
=±16V , VDS=0V
=2.5V , IDS=2A
=10V , VGS=4.5V ,
=10V , ID=1A ,
=4.5V , RG=0.2
=0V , VDS=15V
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
t
d(OFF)
C
C
C
Ω
APM9430
Min. Typ. Max.
20 V
0.7 0.9 1.5
100
±
40 54
110 130
0.75 1.3
6.6 13
2.8
1
13 26
20 45
50 110
20 85
450
100
60
W
C
°
Unit
µ
nA
m
nC
pF
A
V
Ω
V
ns
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
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APM9430
Typical Characteristics
Output Characteristics
15.0
VGS=4,5,6,7,8,9,10V
12.5
10.0
7.5
5.0
ID-Drain Current (A)
2.5
0.0
012345678
VDS - Drain-to-Source V oltage (V)
VGS=3V
VGS=2.5V
VGS=2V
Transfer Characteristics
15.0
12.5
10.0
7.5
5.0
ID-Drain Current (A)
2.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TJ=125°C
TJ=25°C
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.25
1.00
0.75
0.50
(Normalized)
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
IDS=250µA
On-Resistance vs. Drain Current
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
RDS(on)-On-Resistance (Ω)
0.02
0.00
012345678
VGS=2.5V
VGS=4.5V
ID - Drain Current (A)
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