ANPEC APM9428KC-TU, APM9428KC-TR Datasheet

APM9428

N-Channel Enhancement Mode MOSFET

Features

• 20V/6A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 25mΩ(typ.) @ VGS = 4.5V

DS(ON)

= 50mΩ(typ.) @ VGS = 2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D DDD

G

SSS

N-Channel MOSFET

APM 9428

Handling Code
Temp. Range
Package Code

APM 9428

APM 9428
XXXXX

Absolute Maximum Ratings (T

Package Code
K : SO -8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R ee l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

Drain-Source Voltage 20
Gate-Source Voltage ±12
Maximum Drain Current – Continuous

= 25°C

T

A

6

Maximum Drain Current – Pulsed 20

V

A

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APM9428

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C

= 100°C

T

A

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

2.5

1.0

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

DSS

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

SD

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

iss

C

oss

C

rss

Drain-Sour c e Br e ak do wn
Voltage

Zero Gate Voltage Drain
Current

Gate Threshold Voltage
Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=1.7A , VGS=0V

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

GS

V

DS

V

DS=VGS

V

GS

VGS=4.5V , IDS=6A
V

GS

V

DS

I

=1A

D

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance
Output Capacitance
Reverse Transfer

V

DD

V

GEN

V

GS

Frequency=1.0MHz

=0V , IDS=250µA

=18V , VGS=0V 1

, IDS=250µA

=±12V , VDS=0V

=2.5V , IDS=2A

=10V , VGS=4.5V ,

=10V , ID=1A ,

=4.5V , RG=6

=0V , VDS=15V

Ω

APM9428

Min. Typ. Max.

20 V

0.5 0.7 1
100

±

25 30
50 60

0.7 1.1

10 12

2.6

2.5
16 30
40 75
42 78
18 35

675
180
105

W

C

°

Unit

µ

nA

m

nC

pF

A

V

Ω

V

ns

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

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APM9428

Typical Characteristics

Output Characteristics

20

VGS=3,4,5,6,7,8,9,10V

15

VGS=2.5V

10

ID-Drain Current (A)

5

0

012345

VDS - Drain-to-Source V oltage (V)

VGS=2V

Transfer Characteristics

20

16

12

8

ID-Drain Current (A)

4

0

01234

V

TJ=25°C

TJ=125°C

GS - Gate-to-Source V oltage (V)

TJ=-55°C

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

IDS=250µA

On-Resistance vs. Drain Current

0.07

0.06

0.05

0.04

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00
0123456

VGS=2.5V

VGS=4.5V

ID - Drain Current (A)

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