ANPEC APM9424KC-TU, APM9424KC-TR Datasheet
APM9424
N-Channel Enhancement Mode MOSFET
Features
• 20V/10A, R
R
••
• Super High Density Cell Design
••
••
• Reliable and Rugged
••
••
• SO-8 Package
••
= 10mΩ(typ.) @ VGS = 4.5V
DS(ON)
= 15mΩ(typ.) @ VGS = 2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
1
S
S
GD
2
3
45
8S
7
6
D
D
D
SO − 8
D DDD
G
SSS
N-Channel MOSFET
APM 9424
Handling Code
Temp. Range
Package Code
APM 9424 K :
APM 9424
XXXXX
Absolute Maximum Ratings (T
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R e e l
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
V
DSS
V
GSS
ID* Maximum Drain Current – Continuous
I
DM
Drain-Source Voltage 20
Gate-So urce Voltage ±16
= 25°C
T
A
10
Maximum Drain Current – Pulsed 30
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
www.anpec.com.tw1
APM9424
Absolute Maximum Ratings (Cont.) (T
= 25°C unless otherwise noted)
A
Symbol Parameter Rating Unit
P
D
T
J
T
STG
R
JA
θ
Maximum Power Dissipation
TA = 25°C
T
= 100°C
A
2.5
1.0
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance - Junction to Ambient 50 °C/W
*
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
t
d(OFF)
C
C
C
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=2.3A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
GS
V
DS
V
DS=VGS
V
GS
VGS=4.5V , IDS=10A
V
GS
V
DS
=10A
I
DS
Turn-on Delay Time
V
T
Turn-on Rise Time
r
Turn-off Delay Time
T
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
DD
V
GEN
V
GS
Frequency=1.0MHz
=0V , IDS=250µA
=16V , VGS=0V 1 µA
, IDS=250µA
=±16V , VDS=0V
=2.5V , IDS=8A
=10V , VGS=4.5V ,
=15V , IDS=10A ,
=4.5V , RG=6Ω
=0V , VDS=15V
APM9424
Min.
Typ. Max.
20 V
0.7 0.9 1.5
±100
10 13
15 20
0.8 1.3
28.2
37
5.2
7.6
35 70
80 160
115 235
40 85
2400
720
480
W
°C
Unit
V
nA
mΩ
V
nC
ns
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
www.anpec.com.tw2
APM9424
Typical Characteristics
Output Characteristics
30
25
20
15
10
ID-Drain Current (A)
5
0
0246810
VGS=2.5,3,4,5,6,7,8,9,10V
VGS=2V
VGS=1.5V
VDS - Drain-to-Source V oltage (V)
Transfer Characteristics
30
25
20
15
10
ID-Drain Current (A)
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TJ=125°C
TJ=25°C
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.75
1.50
1.25
1.00
0.75
0.50
0.25
VGS(th)-Threshold V oltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003
IDS=250µA
On-Resistance vs. Drain Current
0.030
0.025
0.020
VGS=2.5V
0.015
0.010
RDS(on)-On-Resistance (Ω)
0.005
0.000
0 5 10 15 20 25 30
VGS=4.5V
ID - Drain Current (A)
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