ANPEC APM9424KC-TU, APM9424KC-TR Datasheet

APM9424

N-Channel Enhancement Mode MOSFET

Features

• 20V/10A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 10mΩ(typ.) @ VGS = 4.5V

DS(ON)

= 15mΩ(typ.) @ VGS = 2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D DDD

G

SSS

N-Channel MOSFET

APM 9424

Handling Code
Temp. Range
Package Code

APM 9424 K :

APM 9424
XXXXX

Absolute Maximum Ratings (T

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R e e l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID* Maximum Drain Current – Continuous

I

DM

Drain-Source Voltage 20
Gate-So urce Voltage ±16

= 25°C

T

A

10

Maximum Drain Current – Pulsed 30

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

www.anpec.com.tw1

APM9424

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C
T

= 100°C

A

2.5

1.0
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance - Junction to Ambient 50 °C/W

*

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=2.3A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

GS

V

DS

V

DS=VGS

V

GS

VGS=4.5V , IDS=10A
V

GS

V

DS

=10A

I

DS

Turn-on Delay Time

V

T

Turn-on Rise Time

r

Turn-off Delay Time

T

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

DD

V

GEN

V

GS

Frequency=1.0MHz

=0V , IDS=250µA

=16V , VGS=0V 1 µA

, IDS=250µA

=±16V , VDS=0V

=2.5V , IDS=8A

=10V , VGS=4.5V ,

=15V , IDS=10A ,

=4.5V , RG=6Ω

=0V , VDS=15V

APM9424

Min.

Typ. Max.

20 V

0.7 0.9 1.5
±100

10 13
15 20

0.8 1.3

28.2

37

5.2

7.6
35 70
80 160

115 235

40 85

2400

720
480

W

°C

Unit

V

nA

mΩ

V

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

www.anpec.com.tw2

APM9424

Typical Characteristics

Output Characteristics

30

25

20

15

10

ID-Drain Current (A)

5

0

0246810

VGS=2.5,3,4,5,6,7,8,9,10V

VGS=2V

VGS=1.5V

VDS - Drain-to-Source V oltage (V)

Transfer Characteristics

30

25

20

15

10

ID-Drain Current (A)

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS - Gate-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

1.25

1.00

0.75

0.50

0.25

VGS(th)-Threshold V oltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

IDS=250µA

On-Resistance vs. Drain Current

0.030

0.025

0.020

VGS=2.5V

0.015

0.010

RDS(on)-On-Resistance (Ω)

0.005

0.000
0 5 10 15 20 25 30

VGS=4.5V

ID - Drain Current (A)

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APM9424

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.05

0.04

0.03

0.02

0.01

RDS(on)-On-Resistance (Ω)

0.00
0246810

VGS - Gate-to-Source V oltage (V)

ID=10A

Gate Charge

5

VDS=10V
IDS=10A

4

On-Resistance vs. Junction T emperature

1.8

VGS=4.5V

DS=10A

I

1.6

1.4

1.2

1.0

(Normalized)

0.8

RDS(on)-On-Resistance (Ω)

0.6

0.4

-50-250 255075100125150

TJ - Junction Temperature (°C)

4000

3200

Capacitance

Frequency=1MHz

3

2

1

VGS-Gate-Source Voltage (V)

0

0 5 10 15 20 25 30 35

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

Ciss

2400

1600

Capacitance (pF)

800

0

0 5 10 15 20

Coss

Crss

VDS - Drain-to-Source Voltage (V)

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APM9424

Typical Characteristics

Source-Drain Diode Forward Voltage

30
10

1

TJ=150°C

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

-Source Current (Α)
I

S

0.01

1E-3

0.1

TJ=25°C

VSD-Source-to-Drain Voltage (V )

Normalized Thermal Transient Impedance, Junction to Ambient

2

Single Pulse Power

80

60

40

Power (W)

20

0

0.01 0.1 1 10

Time (sec)

100

Duty Cycle = 0.5

1

D= 0.2

D= 0.1

D= 0.05

0.1

D= 0.02

Thermal Impedance

Normalized Effective Transient

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

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APM9424

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0. 010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

www.anpec.com.tw6

APM9424

Physical Specifications

Terminal Material So lder-Plated Co p per (S olde r Ma te rial : 90/10 or 63/37 Sn Pb)
Lead Solderability M eets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperat ur e m ainta ined abov e 1 83°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Re flow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM9424

Reliability Test Program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

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APM9424

Cover Tape Dimensions

Application C arrier Width Cover Tap e Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jul., 2003

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