ANPEC APM7316KC-TR Datasheet
APM7316
Dual N-Channel Enhancement Mode MOSFET
Features
• 20V/6A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
SO-8 Package
••
=25mΩ(typ.) @ VGS=4.5V
DS(ON)
=40mΩ(typ.) @ VGS=2.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM7316
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
G1
S2
G2 D2
D1 D1
G1
S1
N-Channel MOSFET
°
1
2
3
45
8S1
D1
7
D1
6
D2
SO-8
D2 D2
G2
S2
APM7316 K :
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
APM7316
XXXXX
XXXXX - Date Code
= 25°C unless otherwise noted)
A
Parameter Rating Unit
Drain-Source Voltage 20
Gate-Source Voltage ±16
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 20
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
www.anpec.com.tw1
APM7316
Absolute Maximum Ratings (Cont.) (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=2.3A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Parameter Rating Unit
TA=25°C
=100°C
T
A
= 25°C unless otherwise noted)
A
V
=0V , IDS=250µA
GS
V
=18V , VGS=0V 1
DS
V
V
, IDS=250µA
DS=VGS
=±16V , VDS=0V
GS
VGS=4.5V , IDS=6A
V
=2.5V , IDS=2A
GS
VDS=10V , IDS= 1A
V
=4.5V ,
GS
=10V , IDS=1A ,
V
DD
V
=4.5V , RG=0.2
GEN
V
=0V
GS
V
=15V
DS
Ω
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
2.5
W
1
C
°
C
°
C/W
°
APM7316
Min. Typ. Max.
20 V
0.5 0.7 1.0
100
±
25 35
40 50
0.7 1.1
9.5 12
2.6
2.5
16 32
40 74
42 78
18 35
675
178
105
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
www.anpec.com.tw2
APM7316
Typical Characteristics
Output Characteristics
20
VGS=3,4,5,6,7,8,9,10V
16
12
8
ID-Drain Current (A)
4
0
012345678
2.5V
2V
1.5V
VDS - Drain-to-Source V oltage (V)
Threshold Voltage vs. Junction Temperature
1.50
1.25
IDS=250uA
Transfer Characteristics
20
16
12
8
TJ=125°C
ID-Drain Current (A)
4
0
0.0 0.5 1.0 1.5 2.0 2.5
TJ=25°C
TJ=-55°C
VGS - Gate-to-Source V oltage (V)
On-Resistance vs. Drain Current
0.07
0.06
1.00
0.75
(Normalized)
0.50
0.25
VGS(th)-Threshold Voltage (V)
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
0.05
VGS=2.5V
0.04
0.03
0.02
VGS=4.5V
RDS(ON)-On-Resistance (Ω)
0.01
0.00
0246810
ID - Drain Current (A)
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