ANPEC APM7314KC-TR Datasheet
APM7314
N-Channel Enhancement Mode MOSFET
Features
• 30V/6A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
SO-8 Package
••
=21mΩ(typ.) @ VGS=10V
DS(ON)
=32mΩ(typ.) @ VGS=5V
DS(ON)
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Pin Description
SO-8
1
G1
S2
G2 D2
G1
2
3
45
Top View
D1 D1
S1
G2
8S1
7
6
D1
D1
D2
D2 D2
S2
N-Channel MOSFET
N-Channel MOSFET
Ordering and Marking Information
APM7314
Handling Code
Temp. Range
Package Code
APM7314 K :
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM7314
XXXXX
Package Code
K : SO-8
Temp. Range
C : 0 to 70 C
Handling Code
TR : Tape & Reel
XXXXX - Date Code
°
Copyright ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002
www.anpec.com.tw1
APM7314
Absolute Maximum Ratings (T
Symbol
V
DSS
V
GSS
*
I
D
I
DM
P
D
T
J
T
STG
R
jA
θ
Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 6
Maximum Drain Current – Pulsed 24
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 80
Parameter Rating Unit
= 25°C unless otherwise noted)
A
TA=25°C
T
=100°C
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Test Condition
Static
BV
V
R
I
DSS
GS(th)
I
GSS
DS(ON)
V
Drain-Source Breakdown
DSS
Volt a ge
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=2A , VGS=0V
SD
V
VDS=24V , VGS=0V 1
V
V
V
VGS=10V , IDS=3.5A
V
=0V , IDS=250µA
GS
=24V, VGS=0V, Tj= 55°C
DS
, IDS=250µA
DS=VGS
=±20V , VDS=0V
GS
=5V , IDS=2A
GS
V
A
1.6 W
0.625 W
C
°
C
°
C/W
°
APM7314
Min. Typ. Max.
Unit
30 V
A
5
13
100
±
21 24
32 35
0.6 1.1
µ
nA
m
V
Ω
V
Copyright ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002
www.anpec.com.tw2
APM7314
Electrical Characteristics Cont. (T
Symbol Parameter Test Condition
Dynamic
Notes
b
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
a
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
=15V , IDS= 10A
V
DS
V
=5V ,
GS
Turn-on Delay Time
V
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
=15V , IDS=2A ,
DD
=10V , RG=6
V
GEN
V
=0V
GS
V
=15V
DS
Frequency=1.0MHz
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
= 25°C unless otherwise noted)
A
APM7314
Min. Typ. Max.
15 20
5.8
3.8
11 18
17 26
Ω
37 54
20 30
1200
220
100
Unit
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.2 - Mar., 2002
www.anpec.com.tw3
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