ANPEC APM7313KC-TU, APM7313KC-TR Datasheet
APM7313
Dual N-Channel Enhancement Mode MOSFET
Features
• 30V/6A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
••
•
Reliable and Rugged
••
••
•
SO-8 Package
••
DS(ON)
=21mΩ(typ.) @ VGS=10V
DS(ON)
=27mΩ(typ.) @ VGS=4.5V
DS(ON)
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Pin Description
SO-8
1
G1
S2
G2 D2
2
3
45
T op View
D1 D1
G1
S1
N-Channel MOSFET N-Channel MOSFET
8S1
7
6
D2 D2
G2
D1
D1
D2
S2
Ordering and Marking Information
APM 7313
Handling Code
Temp. Range
Package Code
APM 7313 K :
APM 7313
XXXXX
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
Drain-Source Voltage 30
Gate-Source Voltage ±20
Parameter Rating Unit
Package Code
K : SO -8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R ee l
XXXXX - Date Code
(TA = 25°C unless otherwise noted)
V
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APM7313
Absolute Maximum Ratings (Cont.) (T
Symbol
*
I
D
I
DM
P
D
T
J
T
STG
R
jA
θ
Maximum Drain Current – Cont inuous 6
Maximum Drain Current – Pulsed 24
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Am bient 50
* Surface Mounted on FR4 B oard, t ≤ 10 sec.
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Notes
Drain-Source Breakdown
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-stat e
a
Resistance
a
Diode Forward Voltage ISD=2A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Parameter Rating Unit
TA=25°C
T
=100°C
A
= 25°C unless otherwise noted)
A
V
=0V , IDS=250µA
GS
V
=24V , VGS=0V 1
DS
V
V
, IDS=250µA
DS=VGS
=±20V , VDS=0V
GS
VGS=10V , IDS=3.5A
V
=4.5V , IDS=2A
GS
=15V , IDS= 10A
V
DS
V
=10V
GS
V
=15V , IDS=2A ,
DD
V
=10V , RG=6
GEN
=0V
V
GS
V
=25V
DS
Ω
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
2.5 W
1.0 W
°
APM7313
Min. Typ. Max.
30 V
11.52
100
±
21 28
27 42
0.7 1.3
30 36
5.8
3.8
11 22
17 33
37 68
20 38
1200
210
95
A
C
°
C
°
C/W
Unit
A
µ
V
nA
m
Ω
V
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
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APM7313
Typical Characteristics
Output Characteristics
30
25
20
15
10
-Drain Current (A)
DS
I
5
0
012345678910
VGS=4,4.5,6,8,10V
VGS=3.5V
VGS=3V
VGS=2.5V
VDS-Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
IDS=250µA
1.0
0.8
(Normalized)
-Threshold Voltage (V)
0.6
GS(th)
V
0.4
-50 -25 0 25 50 75 100 125 150
Transfer Characteristics
40
30
20
-Drain Current (A)
10
DS
I
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
TJ=125°C
TJ=25°C
TJ=-55°C
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.050
0.045
0.040
0.035
0.030
0.025
0.020
-On-Resistance (Ω)
0.015
0.010
DS(ON)
R
0.005
0.000
0 5 10 15 20 25 30
VGS=4.5V
VGS=10V
Tj-Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
IDS-Drain Current (A)
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