ANPEC APM6928OC-TR Datasheet

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

APM6928

Pin Description

Ordering and Marking Information

Features

Applications

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

• 30V/4A , R

DS(ON)

=15mΩ(typ.) @ VGS=10V

R

DS(ON)

=25mΩ(typ.) @ VGS=4.5V

••

••

•

Super High Dense Cell Design for Extremely

Low R

DS(ON)

••

••

•

Reliable and Rugged

••

••

•

TSSOP-8 Package

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

APM 6928

Handling Code
Temp. R ange
Package Code

Package Code
O : T S S O P -8
Op eration Junction T em p. Range
C : -55 to 15 0 C
Handling Code
TR : Ta p e & R e e l

°

APM 6928 O :

APM 6928
XXXXX

XXXXX - Date Code

TSSOP-8

T op View

N-Channel MOSFET

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

*

Maximum Drain Current – Continuous 4

I

DM

Maximum Drain Current – Pulsed 20

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

1

2

3

45

6

7

8D1

S1

S1

G1 G2

S2

S2

D2

G1

S1

D1

S1

G2

S2

D2

S2

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw2

APM6928

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Absolute Maximum Ratings Cont. (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

P

D

Maximum Power Dissipation

T

A

=25°C

1.0 W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

R

θ

jA

Thermal Resistance – Junction to Ambient 125

°

C/W

APM6928

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdo w n
Voltage

V

GS

=0V , IDS=250µA

30 V

VDS=24V , VGS=0V 1

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=24V, VGS=0V, Tj= 55°C

5

µ

A

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=250µA

13

V

I

GSS

Gate Leakage C urrent

V

GS

=±20V , VDS=0V

±

100

nA

VGS=10V , IDS=4A

20 30

R

DS(ON)

a

Drain-Source On-state
Resistance

V

GS

=4.5V , IDS=3.4A

35 45

m

Ω

V

SD

a

Diode Forward Voltage ISD=1.25A , VGS=0V

0.73

1.2

V

Dynamic

b

Q

g

Total Gate Charge

15 20

Q

gs

Gate-Source Charge

5.8

Q

gd

Gate-Drain Charge

V

DS

=15V , IDS= 10A

V

GS

=5V ,

3.8

nC

t

d(ON)

Turn-on Delay Time

11 18

T

r

Turn-on Rise Time

17 26

t

d(OFF)

Turn-off Delay Time

37 54

T

f

Turn-off Fall Time

V

DD

=15V , IDS=2A ,

V

GEN

=10V , RG=6

Ω

20 30

ns

C

iss

Input Capacitance

1150

C

oss

Output Capacitance

230

C

rss

Reverse Transfer Capacitance

V

GS

=0V

V

DS

=15V

Frequency=1.0MHz

100

pF

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw3

APM6928

Typical Characteristics

Tj-Junction T emperature (°C)

012345

0

5

10

15

20

Transfer Characteristics

VGS-Gate-to-Source Voltage (V)

I

DS

-Drain Current (A)

TJ=125°C

TJ=25°C

TJ=55°C

-50 -25 0 25 50 75 100 125 150

0.6

0.7

0.8

0.9

1.0

1.1

1.2

Threshold Voltage vs. Junction Temperature

V

GS(th)

-V ariance (V)

IDS=250µA

0 5 10 15 20

0.00

0.01

0.02

0.03

0.04

0.05

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

VGS=10V

VGS=4.5V

0246810

0

4

8

12

16

20

Output Characteristics

VDS-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

VGS=4,5,6,7,8,9,10V

VGS=3V