ANPEC APM4953KC-TU, APM4953KC-TR Datasheet

APM4953

Dual P-Channel Enhancement Mode MOSFET

Features

• -30V/-4.9A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 53mΩ(typ.) @ V

DS(ON)

= 80mΩ(typ.) @ V

DS(ON)

= -10V

GS

= -4.5V

GS

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information



/

5

/ ,

!

"#

&5

%

$

SO − 8

5

, ,

/

5

/

, ,

P-Channel MOSFET

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,

APM4953

Handling Code

Temp. Range

Package Code

APM 4953 K :

APM4953
XXXXX

Absolute Maximum Ratings (T

Package Code
K : S O -8
Operation Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tub e
TR : Tap e & R ee l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

Drain-Source Voltage -30

DSS

V

Gate-Source Voltage ±25

GSS

T

ID* Maximum Drain Current  Continuous

= 25°C

A

-4.9

V

A

IDM Maximum Drain Current  Pulsed -30

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

www.anpec.com.tw1

APM4953

q

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD Maximum Power Dissipation

T

= 25°C

A

T

= 100°C

A

2.5

1.0

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

*

R

θ

JA

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Thermal Resistance - Junction to Ambient 50 °C/W

APM4953

=

. Max.

Min.

Typ

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

VSD Diode Forward Voltage> I

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

Resistance

>

=0V , I

V

GS

=-24V , V

V

DS

V

DS=VGS

=±25V , VDS=0V

V

GS

=-250µA

DS

=0V -1 µA

GS

, IDS=-250µA

VGS=-10V , IDS=-4.9A

V

=-4.5V , IDS=-3.6A

GS

=-1.7A , VGS=0V

SD

-30

-1 -1.5 -2

±100

53 60

80 95

-0.7 -1.3

Dynamic=

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

t

Turn-on Delay Time

d(ON)

Tr Turn-on Rise Time

t

Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

Input Capacitance

iss

C

Output Capacitance

oss

C

Reverse Transfer Capacitance

rss

V

=-15V , IGS=-10V

DS

=-4.6A

l

D

=-15V , ID=-2A ,

V

DD

V

=-10V , R

GEN

=7.5Ω

R

L

V

=0V

GS

=-25V

V

DS

uency=1.0MHz

Fre

=6Ω

G

22.3 29

4.65

2

10 18

15 20

22 38

15 25

1260

340

220



Notes





a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

W

°C

Unit

V

V

nA

mΩ

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

www.anpec.com.tw2

APM4953

Typical Characteristics

Output Characteristics

30

25

20

15

10

-ID-Drain Current (A)

5

0

012345678



-V/5= 5,6,7,8,9,10V

-V/5=4V

-V/5=3V

-V/5=2V

-VDS - Drain-to-Source Voltage (V)

Transfer Characteristics



30

25

20



15

TJ=125°C

10

-ID-Drain Current (A)

5

0

012345

TJ=25°C

-V

GS - Gate-to-Source Voltage (V)

TJ=-55°C



Threshold Voltage vs. Junction Temperature



1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

-IDS=250µA

On-Resistance vs. Drain Current

0.14

0.12

0.10

0.08





0.06

0.04

RDS(on)-On-Resistance (Ω)

0.02

0.00
03691215



V/5=-4.5V

V/5=-10V

-ID - Drain Current (A)

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