ANPEC APM4925KC-TU Datasheet

APM4925

P-Channel Enhancement Mode MOSFET

Features

• -30V/-6.1A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 24mΩ(typ.) @ VGS = -10V

DS(ON)

= 30mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

G1

S2

G2 D2

2

3

45

8S1

7

6

SO − 8

S2

D2 D2

G1

S1

G2

D1 D1

P-Channel MOSFET

D1

D1

D2

APM4925

Handling Code
Temp. Range
Package Co de

APM4925

APM4925
XXXXX

Absolute Maximum Ratings (T

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 °C
Handling Code
TU : Tu be
TR : Ta pe & R ee l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage -30
Gate-Source Voltage ±25
Maximum Drain Current – Continuous

= 25°C

T

A

-6.1

Maximum Drain Current – Pulsed -40

V

A

*Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002

www.anpec.com.tw1

APM4925

y

)

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C

= 100°C

T

A

Maximum J unction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

2.5
1

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbo l Parameter Test Con d ition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON

V

SD

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current

b

Drain-Source On-state Resistance

b

Diode Forw ard Voltage ISD= -1.7A, VGS=0V -0.7 -1.3 V

a

Total Gate Charge 48 58

g

Gate-Source Charge 10

gs

Gate-Drain Charge

gd

=0V, ID= -250µA

V

GS

V

= -24V, VGS=0V -1

DS

V

DS=VGS

V

GS

, ID= -250µA

= ±25V , VDS=0V

VGS= -10V, ID= -6.1A 24 27
V

= -4.5V, ID= -5.1A 30 35

GS

V

= -15V, VGS= -10V,

DS

= -4.6A

I

D

Turn-on Delay Time 17 33

= -25V, RL=12.5Ω,

V

t

Turn-on Rise Time 18 35

r

Turn-off Delay Time 70 128

t

Turn-off Fall Time

f

Input Capacitance 3200

iss

Output Capacitance 560

oss

Reverse Capacitance

rss

DD

I

= -2A , V

D

=6Ω,

R

G

V

=0V, VDS= -25V

GS

GEN

= -10V,

Frequency = 1.0M HZ

APM4925

a

Min. T

.

p

Max.

-30 V

-1 -1.5 -2 V

±

9

30 56

250

100

W

°

C

Unit

µ

nA

m

nC

ns

pF

A

Ω

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002

www.anpec.com.tw2

APM4925

Typical Characteristics

Output Characteristics

50

-VGS=4,5,6,7,8,9,10V

40

30

20

-ID-Drain Current (A)

10

0

0246810

-VDS - Drain-to-Source V oltage (V)

-VGS=3V

Transfer Characteristics

50

40

30

TJ=25°C

TJ=125°C

TJ=-55°C

20

-ID-Drain Current (A)

10

0

012345

-V

GS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.35

1.20

1.05

(Normalzed)

0.90

0.75

-VGS(th)-Threshold Voltage (V)

0.60

-50 -25 0 25 50 75 100 125 150

-IDS=250µA

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002

On-Resistance vs. Drain Current

0.06

0.05

0.04

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00
0 5 10 15 20 25 30

-ID - Drain Current (A)

-VGS=4.5V

-VGS=10V

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