ANPEC APM4890KC-TR Datasheet

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

SO − 8

APM4890

Handling Code
Temp. Range
Package Cod e

Package Code
K : S O -8
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Reel

APM 4890 K :

APM4890
XXXXX

XXXXX - Date Code

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

Maximum Drain Current – Continuous 11.5

I

DM

Maximum Drain Current – Pulsed 50

A

TA=25°C

2.5

P

D

Maximum Power Dissipation

T

A

=100°C

1.0

W

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

N-Channel MOSFET

G

S

D

1

2

3

45

6

7

8S

S

S

GD

D

D

D

• 30V/11.5A, R

DS(ON)

= 9mΩ(typ.) @ VGS = 10V

R

DS(ON)

=14.5mΩ(typ.) @ VGS = 4.5V

••

••

•

High Density Cell Design

••

••

•

Reliable and Rugged

••

••

•

SO-8 Package

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw2

Thermal Characteristics

Symbol

Parameter Rating Unit

T

J

Maximum Junction Temperature 150

T

STG

Storage Temperature Range -55 to 150

°C

R

θ

JA

Thermal Resistance - Junction to Ambient 50 °C/W

Electrical Characteristics (TA=25°C unless otherwise noted)

APM4890

Symbol Parameter Test Condition

Min. Typ

a

.

Max.

Unit

Static

BV

DSS

Drain-Source Breakdown Voltage

V

GS

=0V, ID=250µA

30 V

I

DSS

Zero Gate Voltage Drain Current VDS=24V, VGS=0V 1 uA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, ID=250µA

13V

I

GSS

Gate Leakage Current VGS=±20V, V

DS

=0V ±100 nA

VGS=10V, ID=11.5A 9 11

R

DS(ON)

Drain-Source On-state Resistance

b

VGS=4.5V, ID=5A

14.5 16

m

Ω

V

SD

Diode Forw ar d Voltage

b

ISD=2.3A, VGS=0V 0.6 1.2 V

Dynamic

a

Q

g

Total Gate Charge 45 60

Q

gs

Gate-Source Charge 10

Q

gd

Gate-Drain Charge

V

DS

=15V, VGS=10V,

I

D

=10A

8

nC

t

d(ON)

Turn-on Delay Time 16 25

t

r

Turn-on Rise Time 24 35

t

d(OFF)

Turn-off Delay Time 78 110

t

f

Turn-off Fall Time

V

DD

=15V, RL=15Ω,

I

D

=1A , V

GEN

=10V,

R

G

=6Ω,

42 80

ns

C

iss

Input Capacitance 2000

C

oss

Output Capacitance 400

C

rss

Reverse Transfer Capacitance

V

GS

=0V, VDS=25V

Frequency = 1. 0MHZ

220

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse widt h ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

APM4890

www.anpec.com.tw3

Typical Characteristics

0246810

0

10

20

30

40

50

Output Characteristics

VDS-Drain-to-Source Voltage (V)

I

DS

-Drain Current (A)

VGS=5,6,7,8,9,10V

VGS=3V

VGS=4V

012345

0

10

20

30

40

50

Transfer Characteristics

VGS-Gate-to-Source Voltage (V)

I

DS

-Drain Current (A)

TJ=125°C

TJ=25°C

TJ=-55°C

-50 -25 0 25 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Threshold Voltage vs. Junction Temperature

Tj-Junction T emperature (°C)

IDS=250µA

0 5 10 15 20 25 30 35

0.000

0.004

0.008

0.012

0.016

0.020

On-Resistance vs. Drain Current

IDS-Drain Current (A)

R

DS(ON)

-On-Resistance (Ω)

VGS=10V

VGS=4.5V

VGS(th)-Threshold Voltage (V)

(Normalized)