ANPEC APM4835KC-TU, APM4835KC-TR Datasheet

APM4835

P-Channel Enhancement Mode MOSFET

Features

• -30V/-8A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 16mΩ(typ.) @ VGS = -10V

DS(ON)

= 24mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM 4835

Handling Code
Temp. Range
Package Code

APM 4835

APM 4835
XXXXX

Absolute Maximum Ratings (T

Package Code
K : SO-8
Operation Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R e e l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

D

I

DM

Drain-Source Voltage -30
Gate-Source Voltage ±25

*

Maximum Drain Current – C ontinuous

= 25°C

T

A

-8

V

A

Maximum Drain Current – Pulsed -50

*Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

www.anpec.com.tw1

APM4835

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C

= 100°C

T

A

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Am bient 50 °C/W

2.5
1

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage

DSS

V

=0V, ID= -250µA

GS

Zero Gate Voltage Drain Current VDS= -30V, VGS=0V -1
Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state Resistance

V

DS=VGS

V

GS

VGS= -10V, ID= -8A

b

, ID= -250µA

= ±25V , VDS=0V

VGS= -4.5V, ID= -5A

Diode Forward Voltage

SD

a

Total Gate Charge 48 60

g

Gate-Source Charge 10

gs

Gate-Drain Charge

gd

b

ISD= -3A, VGS=0V -0.7 -1.3 V

V

= -15V, VGS= -10V,

DS

I

= -4.6A

D

Turn-on Delay Time 16 30

= -25V, ID= -2A,

V

t

Turn-on Rise Time 17 30

r

Turn-off Delay Time 75 120

t

Turn -off Fall Ti me

f

Input Capacitance 3800

iss

Output Capacitance 590

oss

Revers e Transfer Capa c ita n c e

rss

DD

V

= -10V, RG=6

GEN

=12.5

R

L

V

GS

Ω

=0V, VDS=-25V

Frequency = 1.0MHZ

Ω

APM4835

a

.

Min. Typ

Max.

-30 V

-1 -1.5 -2 V

±

16 19
24 30

9

31 80

250

100

°

W

C

Unit

A

µ

nA

m

Ω

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

www.anpec.com.tw2

APM4835

Typical Characteristics

Output Characteristics

50

-VGS=4,5,6,7,8,9,10V

40

30

20

-ID-Drain Current (A)

10

0

0246810

-VDS - Drain-to-Source V oltage (V)

-VGS=3V

Transfer Characteristics

50

40

30

TJ=25°C

TJ=125°C

TJ=-55°C

20

-ID-Drain Current (A)

10

0

012345

-V

GS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

(Normalized)

0.75

-VGS(th)-Threshold Voltage (V)

0.50

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003

-IDS=250µA

On-Resistance vs. Drain Current

0.05

0.04

0.03

0.02

0.01

RDS(on)-On-Resistance (Ω)

0.00
0 1020304050

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

www.anpec.com.tw3