ANPEC APM4800KC-TU, APM4800KC-TR Datasheet
APM4800
N-Channel Enhancement Mode MOSFET
Features
• 30V/8A , R
R
••
•
Super High Dense Cell Design for Extremely
••
Low R
DS(ON)
••
•
Reliable and Rugged
••
••
•
SO-8 Package
••
=15mΩ(typ.) @ VGS=10V
DS(ON)
=22mΩ(typ.) @ VGS=4.5V
DS(ON)
Pin Description
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
SO-8
1
S
S
GD
2
3
45
8S
D
7
D
6
D
T op View
D
G
S
N-Channel MOSFET
APM 4800
Handling Code
Temp. Range
Package Code
APM 4800 K :
APM 4800
XXXXX
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
*
I
D
I
DM
Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 8
Maximum Drain Current – Pulsed 32
Parameter Rating Unit
Package Code
K : SO -8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R ee l
XXXXX - Date Code
(TA = 25°C unless otherwise noted)
V
A
* Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw1
APM4800
Absolute Maximum Ratings Cont. (T
Symbol
P
D
T
J
T
STG
R
jA
θ
Maximum Power Dissipation
Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient 50
Electrical Characteristics (T
Symbol Parameter Test Condition
Static
BV
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
Dynamic
Q
Q
Q
t
d(ON)
T
t
d(OFF)
T
C
C
C
Drain-Source Breakd o w n
DSS
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
a
Resistance
a
Diode Forward Voltage ISD=2A , VGS=0V
SD
b
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
Turn-on Delay Time
Turn-on Rise Time
r
Turn-off Delay Time
Turn-off Fall Time
f
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Parameter Rating Unit
TA=25°C
T
=100°C
A
= 25°C unless otherwise noted)
A
V
=0V , IDS=250µA
GS
VDS=24V , VGS=0V 1
=24V, VGS=0V, Tj= 55°C
V
DS
V
V
, IDS=250µA
DS=VGS
=±20V , VDS=0V
GS
VGS=10V , IDS=4A
=4.5V , IDS=2A
V
GS
=15V , IDS= 2A
V
DS
=4.5V ,
V
GS
V
=15V , IDS=1A ,
DD
V
=10V , RG=0.2
GEN
=0V
V
GS
=15V
V
DS
Frequency=1.0MHz
= 25°C unless otherwise noted)
A
2.5
1.0
APM4800
Min. Typ. Max.
30 V
13
100
±
15 18
22 30
0.6 1.3
15 20
5.8
3.8
11 18
17 26
Ω
37 54
20 30
1200
220
100
W
C
°
C
°
C/W
°
Unit
A
5
µ
V
nA
m
Ω
V
nC
ns
pF
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw2
APM4800
Typical Characteristics
Output Characteristics
30
25
20
15
-Drain Current (A)
10
DS
I
5
0
0246810
VGS=5,6,7,8,9,10V
VGS=4V
VGS=3.5V
VGS=3V
VDS-Drain-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
IDS=250µA
Transfer Characteristics
40
30
20
-Drain Current (A)
DS
10
I
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
TJ=125°C
TJ=25°C
TJ=-55°C
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.040
0.035
1.0
0.8
(Normalized)
-Threshold Voltage (V)
0.6
GS(th)
V
0.4
-50 -25 0 25 50 75 100 125 150
Tj-Junction T emperature (°C)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
0.030
VGS=4.5V
0.025
0.020
VGS=10V
0.015
-On-Resistance (Ω)
0.010
DS(ON)
R
0.005
0.000
0 5 10 15 20 25 30
IDS-Drain Current (A)
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