ANPEC APM4542KC-TRL, APM4542KC-TR Datasheet

APM4542

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

• N-Channel

30V/7A, R
R

=17mΩ(typ.) @ VGS=10V

DS(ON)

=22mΩ(typ.) @ VGS=4.5V

DS(ON)

• P-Channel

-30V/-5.5A,R
R

••

• Super High Dense Cell Design for Extremely

••

Low R

••

• Reliable and Rugged

••

••

• SO-8 Package

••

DS(ON)

=35mΩ(typ.) @ VGS=-10V

DS(ON)

=51mΩ(typ.) @ VGS=-4.5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Pin Description

1
2

G1

3

S2

45

G2 D2

SO-8

D1 D1

G1

S1

N-Channel MOSFET

8S1

D1

7

D1

6

D2

S2

G2

D2 D2

P-Channel MOSFET

Ordering and Marking Information

APM4542

Lead Free Code
Handling Code

Temp. Range
Package Code

APM4542 K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

APM4542
XXXXX

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Orginal Device

XXXXX - Date Co d e

°

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APM4542

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter N-Channel P-Channel Unit

V

Drain-Source Voltage 30 -30

DSS

V

Gate-Source Voltage ±20 ±20

GSS

*

I

Maximum Drain Current – Continuous 7 -5

D

IDM Maximum Drain Current – Pulsed 28 -20

PD

Maximum Power Dissipation

TA=25°C
T

=100°C

A

2 2

0.8 0.8

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

R

θ

Thermal Resistance – Junction to Ambient 62.5

jA

V

A

W

°C
°C

°C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM4542

Min.

Typ. Max.

Unit

Static

Notes

BV

I

DSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

V

GS

VDS=24V , VGS=0V
V

DS

VDS=VGS , IDS=250µA

V

Gate Threshold Voltage

GS(th)

V

DS=VGS

VGS=±20V , VDS=0V

I

Gate Leakage Current

GSS

V

GS

VGS=10V , IDS=7A

Drain-Source On-state

R

a

DS(ON)

Resistance

a

V

 Diode Forward Voltage

SD

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

VGS=4.5V , IDS=5A
VGS=-10V , IDS=-5.5A
V

GS

ISD=2A , VGS=0V N-Ch
I

SD

N-Ch

=0V , IDS=250µA

P-Ch
N-Ch

=-24V , VGS=0V

P-Ch
N-Ch

, IDS=-250µA

P-Ch
N-Ch

=±20V , VDS=0V

P-Ch

N-Ch

P-Ch

=-4.5V , IDS=-4A

=-2.3A , VGS=0V P-Ch

30

-30
1

-1

1 1.5 2

-1 -1.5 -2
±100
±100
17 24
22 30
35 56
51 78
 0.7 1.3

-0.7 -1.3

V

µA

V

nA

mΩ

V

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

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APM4542

Electrical Characteristics (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition



Dynamic

t

b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

t

 Turn-on Delay Time

d(ON)

Tr Turn-on Rise Time

 Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

 Input Capacitance

iss

C

 Output Capacitance

oss

C

 Reverse Transfer Capacitance

rss

N-Channel

=15V , IDS= 7A

V

DS

V

=10V 

GS

P-Channel

=-15V , IDS=-5.5A

V

DS

=-10V 

V

GS

N-Channel

=15V , IDS=2A ,

V

DD

=10V , RG=6Ω ,

V

GEN

R

=7.5Ω

L

P-Channel

=-15V , IDS=-2A ,

V

DD

=-10V , RG=6Ω,

V

GEN

R

=7.5Ω

L

N-Channel

=0V, VDS=25V

V

GS

Frequency=1.0MHz
P-Channel

=0V, VDS=-25V

V

GS

Frequency=1.0MHz

N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch

APM4542

Min.

Typ. Max.

19 28
28 36

1.6
5

3.6
4
11 20
12 24
17 28
15 29
36 62
35 60
20 36
15 30
835
950
145
160
15
110

Unit

nC

ns

pF

Notes

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

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APM4542

Typical Characteristics

N-Channel

Output Characteristics

28

24

20

16

12

8

-Drain Current (A)

D

I

4

0

012345

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.6

1.4

VGS= 4,5,6,7,8,9,10V

VGS=3V

VGS=2V

IDS =250µA

Transfer Characteristics

28

24

20

16

12

8

-Drain Current (A)

D

I

4

0

1.5 2.0 2.5 3.0 3.5

Tj=25oC

Tj=125oC

Tj=-55oC

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.040

0.035

1.2

1.0

0.8

(Normalized)

0.6

-Threshold Voltage (V)

GS(th)

0.4

V

0.2

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

0.030

0.025

0.020

0.015

0.010

RDS(on)-On-Resistance (Ω)

0.005

0.000
0 4 8 1216202428

VGS=4.5V

VGS=10V

IDS-Drain Current (A)

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