ANPEC APM4542KC-TRL, APM4542KC-TR Datasheet

APM4542

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

• N-Channel

30V/7A, R
R

=17mΩ(typ.) @ VGS=10V

DS(ON)

=22mΩ(typ.) @ VGS=4.5V

DS(ON)

• P-Channel

-30V/-5.5A,R
R

••

• Super High Dense Cell Design for Extremely

••

Low R

••

• Reliable and Rugged

••

••

• SO-8 Package

••

DS(ON)

=35mΩ(typ.) @ VGS=-10V

DS(ON)

=51mΩ(typ.) @ VGS=-4.5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Pin Description

1
2

G1

3

S2

45

G2 D2

SO-8

D1 D1

G1

S1

N-Channel MOSFET

8S1

D1

7

D1

6

D2

S2

G2

D2 D2

P-Channel MOSFET

Ordering and Marking Information

APM4542

Lead Free Code
Handling Code

Temp. Range
Package Code

APM4542 K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

APM4542
XXXXX

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Orginal Device

XXXXX - Date Co d e

°

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APM4542

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter N-Channel P-Channel Unit

V

Drain-Source Voltage 30 -30

DSS

V

Gate-Source Voltage ±20 ±20

GSS

*

I

Maximum Drain Current – Continuous 7 -5

D

IDM Maximum Drain Current – Pulsed 28 -20

PD

Maximum Power Dissipation

TA=25°C
T

=100°C

A

2 2

0.8 0.8

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

R

θ

Thermal Resistance – Junction to Ambient 62.5

jA

V

A

W

°C
°C

°C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM4542

Min.

Typ. Max.

Unit

Static

Notes

BV

I

DSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

V

GS

VDS=24V , VGS=0V
V

DS

VDS=VGS , IDS=250µA

V

Gate Threshold Voltage

GS(th)

V

DS=VGS

VGS=±20V , VDS=0V

I

Gate Leakage Current

GSS

V

GS

VGS=10V , IDS=7A

Drain-Source On-state

R

a

DS(ON)

Resistance

a

V

 Diode Forward Voltage

SD

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

VGS=4.5V , IDS=5A
VGS=-10V , IDS=-5.5A
V

GS

ISD=2A , VGS=0V N-Ch
I

SD

N-Ch

=0V , IDS=250µA

P-Ch
N-Ch

=-24V , VGS=0V

P-Ch
N-Ch

, IDS=-250µA

P-Ch
N-Ch

=±20V , VDS=0V

P-Ch

N-Ch

P-Ch

=-4.5V , IDS=-4A

=-2.3A , VGS=0V P-Ch

30

-30
1

-1

1 1.5 2

-1 -1.5 -2
±100
±100
17 24
22 30
35 56
51 78
 0.7 1.3

-0.7 -1.3

V

µA

V

nA

mΩ

V

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

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APM4542

Electrical Characteristics (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition



Dynamic

t

b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

t

 Turn-on Delay Time

d(ON)

Tr Turn-on Rise Time

 Turn-off Delay Time

d(OFF)

Tf Turn-off Fall Time

C

 Input Capacitance

iss

C

 Output Capacitance

oss

C

 Reverse Transfer Capacitance

rss

N-Channel

=15V , IDS= 7A

V

DS

V

=10V 

GS

P-Channel

=-15V , IDS=-5.5A

V

DS

=-10V 

V

GS

N-Channel

=15V , IDS=2A ,

V

DD

=10V , RG=6Ω ,

V

GEN

R

=7.5Ω

L

P-Channel

=-15V , IDS=-2A ,

V

DD

=-10V , RG=6Ω,

V

GEN

R

=7.5Ω

L

N-Channel

=0V, VDS=25V

V

GS

Frequency=1.0MHz
P-Channel

=0V, VDS=-25V

V

GS

Frequency=1.0MHz

N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch

APM4542

Min.

Typ. Max.

19 28
28 36

1.6
5

3.6
4
11 20
12 24
17 28
15 29
36 62
35 60
20 36
15 30
835
950
145
160
15
110

Unit

nC

ns

pF

Notes

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

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APM4542

Typical Characteristics

N-Channel

Output Characteristics

28

24

20

16

12

8

-Drain Current (A)

D

I

4

0

012345

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.6

1.4

VGS= 4,5,6,7,8,9,10V

VGS=3V

VGS=2V

IDS =250µA

Transfer Characteristics

28

24

20

16

12

8

-Drain Current (A)

D

I

4

0

1.5 2.0 2.5 3.0 3.5

Tj=25oC

Tj=125oC

Tj=-55oC

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.040

0.035

1.2

1.0

0.8

(Normalized)

0.6

-Threshold Voltage (V)

GS(th)

0.4

V

0.2

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

0.030

0.025

0.020

0.015

0.010

RDS(on)-On-Resistance (Ω)

0.005

0.000
0 4 8 1216202428

VGS=4.5V

VGS=10V

IDS-Drain Current (A)

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APM4542

Typical Characteristics (Cont.)

N-Channel

On-Resistance vs. Gate-to-Source Voltage

0.8

0.7

0.6

0.5

0.4

0.3

0.2

DS(on)-On-Resistance (Ω)

R

0.1

0.0
0246810

VGS-Gate-to-Source Voltage (V) Tj-Junction Temperature (°C)

10

VDS=15V
I

=7A

DS

8

6

4

2

-Gate-to-Source Voltage (V)

GS

V

0

048121620

Gate Charge

ID= 7A

On-Resistaence vs. Junction Temperature

1.8
VGS = 10V

1.6
I

= 7A

DS

1.4

1.2

1.0

(Normalized)

0.8

0.6

RDS(on)-On-Resistance (Ω)

0.4

-50 -25 0 25 50 75 100 125 150

Capacitance Characteristics

1200

1000

800

600

400

Frequency=1MHz

Ciss

C-Capacitance (pF)

200

0

0 5 10 15 20 25 30

Coss

Crss

QG-Total Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

VDS-Drain-to-Source Voltage (V)

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APM4542

Typical Characteristics (Cont.)

N-Channel

Source-Drain Diode Forward Voltage

30

10

1

-Source Current (A)

S

I

0.1

Tj=150oC

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj=25oC

VSD-Source-to-Drain Voltage

Normalized Transient Thermal Transient Impedence, Junction to Ambient

2

Single Pulse Power

75

60

45

30

Power (W)

15

0

0.01 0.1 1 10 30

Time (sec)

1

Duty Cycle=0.5

D=0.2

0.1

D=0.1

Thermal Impedance

Normalized Effective Transient

0.01

D=0.05
D=0.02

D=0.01

1E-4 1E-3 0.01 0.1 1 10 30

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

SINGLE PULSE

Square Wave Pulse Duration (sec)

P

DM

t

1

t

1.Duty Cycle, D= t1/t2

2.Pe r U nit Base = R

3.TJM-TA=PDMZ

4.Surface Mounted

2

thJA

thJA

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=62.5oC/W

APM4542

Typical Characteristics

P-Channel

Output Characteristics

20

15

10

-ID-Drain Current (A)

5

0

0246810

-VGS= 4,5,6,7,8,9,10V

-VGS=3V

-VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

20

15

10

5

-ID-Drain Current (A)

0

012345

Tj=125oC

Tj=25oC

Tj=-55oC

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

-IDS=250

µΑ

On-Resistance vs. Drain Current

0.105

0.090

0.075
VGS=-4.5V

0.060

0.045

0.030

RDS(on)-On-Resistance (Ω)

0.015

0.000

0 5 10 15 20

VGS=-10V

-ID - Drain Current (A)

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APM4542

Typical Characteristics (Cont.)

P-Channel

On-Resistance vs. Gate-to-Source Voltage

0.150

0.125

0.100

0.075

0.050

0.025

RDS(on)-On-Resistance (Ω)

0.000
2345678910

-VGS - Gate-to-Source Voltage (V)

-ID= 5.5A

Gate Charge

10

-VDS=15 V

-I

8

= 5.5 A

DS

On-Resistance vs. Junction Temperature

1.8

-VGS = 10V

1.6

-I

= 5.5A

DS

1.4

1.2

1.0

(Normalized)

0.8

RDS(on)-On-Resistance (Ω)

0.6

0.4

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

1500

1250

Capacitance

Frequency=1MHz

6

4

2

-VGS-Gate-Source Voltage (V)

0

0 5 10 15 20 25 30

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

1000

750

500

Ciss

Capacitance (pF)

250

0

0 5 10 15 20 25 30

Coss

-VDS - Drain-to-Source Voltage (V)

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Crss

APM4542

Typical Characteristics (Cont.)

P-Channel

Source-Drain Diode Forward Voltage

20
10

1

-Source Current (A)

S

-I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj=150oC

Tj=25oC

-VSD-Source-to-Drain Voltage (V )

Normalized Thermal Transient Impedance, Junction to Ambient

2

Single Pulse Power

75

60

45

30

Power (W)

15

0

0.01 0.1 1 10 30

Time (sec)

1

Duty Cycle=0.5

D=0.2

0.1

D=0.1

Thermal Impedance

Normalized Effective Transient

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

D=0.05

D=0.02

0.01
1E-4 1E-3 0.01 0.1 1 10 30

D=0.01

SINGLE PULSE

Square Wave Pulse Duration (sec)

P

DM

t

1

t

1.Du ty C y cle , D = t1/t 2

2.Per Unit Base=R

3.TJM-TA=PDMZ

4.Surface Mounted

2

thJA

thJA

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=62.5oC/W

APM4542

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050
e1 0.33 0.51 0.013 0.020
e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

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APM4542

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, A NSI/J-STD-002 C a teg ory 3 .

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max .
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max . 10 °C /second max .
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

2.5mm

≥≥≥≥

pkg. thickness < 2.5mm and
pkg. volume

350 mm³

≥≥≥≥

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4542

Reliability test program

T est item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

t

W

E

F

Po

A

P

P1

Ao

J

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 162 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 1 2± 0. 3 8± 0.1 1 .75±0.1

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APM4542

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
T el : 886-2-89191368
Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2003

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