ANPEC APM4532KC-TR Datasheet

APM4532

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

• N-Channel

30V/5A, R
R

=35mΩ(typ.) @ VGS=10V

DS(ON)

=60mΩ(typ.) @ VGS=4.5V

DS(ON)

• P-Channel

-30V/-3.5A, R
R

••

• Super High Dense Cell Design for Extremely

••

Low R

••

• Reliable and Rugged

••

••

• SO-8 Package

••

DS(ON)

=85mΩ(typ.) @ VGS=-10V

DS(ON)

=135mΩ(typ.) @ VGS=-4.5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Pin Description

1
2

G1

3

S2

45

G2 D2

D1 D1

G1

S1

N-Channel MOSFET P-Channel MOSFET

SO-8

8S1
7
6

G2

D1
D1
D2

D2 D2

S2

Ordering and Marking Information

APM4532

Handling Code
Temp. Range
Package Code

APM4532 K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003

APM4532
XXXXX

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & Reel

XXXXX - Date Code

°

www.anpec.com.tw1

APM4532

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter N-Channel P-Channel Unit

V

Drain-Source Voltage 30 -30

DSS

V

Gate-Source Voltage ±25 ±25

GSS

*

I

Maximum Drain Current – Continuous 5 -3.5

D

IDM Maximum Drain Current – Pulsed 20 -20

PD

Maximum Power Dissipation

TA=25°C
T

=100°C

A

2 2

0.8 0.8

TJ Maximum Junction Temperature 150

T

Storage Temperature Range -55 to 150

STG

R

θ

Thermal Resistance – Junction to Ambient 62.5

jA

V

A

W

°C
°C

°C/W

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

Symbol Parameter Test Condition

= 25°C unless otherwise noted)

A

APM4532

Min.

Typ. Max.

Unit

Static

BV

V

R

DS(ON)

V

I

DSS

GS(th)

I

GSS

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage

SD

N-Ch

=0V , IDS=250µA

V

GS

VDS=24V , VGS=0V
V

=-24V , VGS=0V

DS

VDS=VGS , IDS=250µA
V

DS=VGS

, IDS=-250µA

P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch

V

=±25V , VDS=0V

GS

P-Ch

VGS=10V , IDS=5A

N-Ch

VGS=4.5V , IDS=4A
VGS=-10V , IDS=-3.5A

P-Ch

=-4.5V , IDS=-2.5A

V

GS

ISD=1.7A , VGS=0V N-Ch
I

=-1.7A , VGS=0V P-Ch

SD

30

-30
1

-1

1 1.5 2

-1 -1.5 -2
±100
±100
35 45
60 70

85 95

135 150

0.7 1.3

-0.7 -1.3

V

µA

V

nA

mΩ

V

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

www.anpec.com.tw2

APM4532

Electrical Characteristics (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition



Q

Q

Q

t

d(ON)

T

t

d(OFF)

T

a

Total Gate Charge



g

Gate-Source Charge



gs

Gate-Drain Charge



gd

Turn-on De lay Time



Turn-on Rise Time



r

Turn-off Delay Time



Turn-off Fall Time



f

N-Channel
V

=10V , IDS= 5A

DS

V

=4.5V

GS



P-Channel
V

=-10V , IDS=-3.5A

DS

V

=-4.5V

GS



N-Channel
V

=10V , IDS=1A ,

DD

V

=4.5V , RG=10Ω

GEN

P-Channel
V

=-10V , IDS=-1A ,

DD

V

=-4.5V , RG=10Ω

GEN



N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch

Dynamic

N-Ch

C

C

Input Capacitance



iss

Output Capacitance



oss

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

P-Ch
N-Ch
P-Ch
N-Ch

C

Reverse Transfer Capacitance



rss

P-Ch

APM4532

Typ. Max.

Min.

7 15
8 15

4.7
2

1.1
1
10 15
8 15
8 20
7 20
20 28
15 28
5 15
7 18
376
495
115
130
58
60

Unit

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

www.anpec.com.tw3

APM4532

Typical Characteristics

N-Channel

Output Characteristics

20

15

10

ID-Drain Current (A)

5

0

012345

VGS=5,6,7,8,9,10V

VGS=4V

VGS=3V

VDS - Drain-to-Source V oltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

IDS=250uA

Transfer Characteristics

20.0

17.5

15.0

12.5

10.0

7.5

ID-Drain Current (A)

5.0

2.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

TJ=125°C

TJ=25°C

VGS - Gate-to-Source V oltage (V)

On-Resistance vs. Drain Current

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
0 2 4 6 8 10 12 14 16 18 20

VGS=4.5V

VGS=10V

ID - Drain Current (A)

TJ=-55°C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002

www.anpec.com.tw4