ANPEC APM4500KC-TR Datasheet

APM4500

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

• N-Channel

20V/8A , R

R

=22mΩ(typ.) @ VGS=4.5V

DS(ON)

=30mΩ(typ.) @ VGS=2.5V

DS(ON)

• P-Channel

-20V/-4.3A , R

R

••

•

Super High Dense Cell Design for Extremely Low

••

R

DS(ON)

••

• Reliable and Rugged

••

••

• SO-8 Package

••

=80mΩ(typ.) @ VGS=-4.5V

DS(ON)

=105mΩ(typ.) @ VGS=-2.5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered

Systems.

Pin Description

1

2

G1

3

S2

45

G2 D2

D1 D1

G1

S1

N-Channel MOSFET P-Channel MOSFET

SO-8

G2

8S1

D1

7

D1

6

D2

D2 D2

S2

Ordering and Marking Information

APM4500

Handling Code

Temp. Range

Package Code

APM4500 K :

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

APM4500
XXXXX

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel

XXXXX - Date Code

°

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APM4500

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 20 -20

Gate-Source Voltage ±12 ±12

Maximum Drain Current – Continuous 8 -4.3

Maximum Drain Current – Pulsed 35 -17

Parameter N-Channel P-Channel Unit

= 25°C unless otherwise noted)

A

TA=25°C

P

T

T

STG

R

Maximum Power Dissipation

D

Maximum Junction Temperature 150

J

T

=100°C

A

Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 62.5

jA

θ

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Test Condition

Static

BV

I

DSS

Drain-Source Breakdown

DSS

Volt a g e

Zero Gate Voltage Drain
Current

V

=0V , IDS=250µA

GS

VDS=16V , VGS=0V

=-16V , VGS=0V

V

DS

VDS=VGS , IDS=250µA

V

GS(th)

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

VGS=±12V , VDS=0V

I

GSS

Gate Leakage Current

=±12V , VDS=0V

V

GS

VGS=4.5V , IDS=8A

R

DS(ON)

V

SD

Drain-Source On-state

a

Resistance

a

Diode Forward Voltage

VGS=2.5V , IDS=5.2A

VGS=-4.5V , IDS=-4.3A

V

=-2.5V , IDS=-2A

GS

ISD=1.7A , VGS=0V N-Ch

I

=-1.25A , VGS=0V P-Ch

SD

2.5 2.5

1.0 1.0

APM4500

Min.

N-Ch

P-Ch

20

-20

N-Ch

P-Ch

N-Ch

P-Ch

0.5 0.7 1

-0.45 -1

N-Ch

P-Ch

N-Ch

P-Ch

Typ. Max.

1

-1

±100

±100

22 26

30 36

80 90

105 115

0.8 1.3

-0.7 -1.3

V

A

W

°C

°C

°C/W

Unit

V

µA

V

nA

mΩ

V

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

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APM4500

Electrical Characteristics (Cont.) (T

A

Symbol Parameter Test Condition

Q

Q

Q

t

d(ON)

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time

T

Turn-on Rise Time

r

N-Channel

=10V , IDS= 8A

V

DS

V

=4.5V

GS

P-Channel

V

=-10V , IDS=-3A

DS

V

=-4.5V

GS

N-Channel

V

=10V , IDS=1A ,

DD

V

=4.5V , RG=0.2

GEN

Ω

Dynamic

P-Channel

t

d(OFF)

T

C

C

Turn-off Delay Time

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

V

=-10V , IDS=-1A ,

DD

V

=-4.5V , RG=6Ω

GEN

V

=0V

GS

V

=15V

DS

Frequency=1.0MHz

C

Reverse Transfer Capacitance

rss

= 25°C unless otherwise noted)

APM4500

Min.

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

Typ. Max.

10 13

912

3

3

2.5

1

16 32

13 21.5

40 75

36 56

42 78

45 69.5

20 35

37 57.5

675

510

178

270

105

120

Unit

nC

ns

pF

Notes

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

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APM4500

Typical Characteristics

N-Channel MOSFET

Output Characteristics

20

VGS=3,4,5,6,7,8,9,10V

16

12

8

ID-Drain Current (A)

4

0

012345678

VGS=2.5V

VGS=2V

VGS=1.5V

VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

IDS=250µA

Transfer Characteristics

20

16

12

8

ID-Drain Current (A)

4

0

0.0 0.5 1.0 1.5 2.0 2.5

TJ=25°C

TJ=125°C

TJ=-55°C

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.06

0.05

1.00

0.75

(Normalized)

0.50

0.25

VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

0.04

VGS=2.5V

0.03

0.02

RDS(ON)-On-Resistance (Ω)

0.01

0.00
0246810

VGS=4.5V

ID - Drain Current (A)

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