ANPEC APM4463KC-TU, APM4463KC-TR Datasheet

APM4463

P-Channel Enhancement Mode MOSFET

Features

• -20V/-10A, R

R

••

•

High Density Cell Design

••

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

=12mΩ(typ.) @ VGS =-4.5V

DS(ON)

=18mΩ(typ.) @ VGS =-2.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM4463

Handling Code
Temp. Range
Package Cod e

APM 4463 K :

APM4463
XXXXX

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

I

D

I

DM

P

D

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Drain-Source Voltage -20
Gate-Source Voltage ±16
Maximum Drain Current – Continuous -10
Maximum Drain Current – P ulse d -50
Maximum Power Dissipation

Parameter Rating Unit

Package Code
K : S O -8
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Reel

XXXXX - Date Code

= 25°C unless otherwise noted)

A

TA=25°C
T

=100°C

A

2.5

1.0

V

A

W

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

www.anpec.com.tw1

APM4463

Thermal Characteristics

Symbol

T

J

T

STG

R

JA

θ

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150
Thermal Resistance - Junction to Ambient 50 °C/W

Parameter Rating Unit

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Sour ce Break do w n Voltage

DSS

V

=0V, ID=-250µA

GS

Zero Gate Voltage Drain Current VDS=-16V, VGS=0V 1 uA
Gate Threshold Voltage
Gate Leakage Current VGS=±16V, V

Drain-Sour ce On-state Resistance

V

DS=VGS

VGS=-4.5V, ID=-10A 12 17

b

, ID=-250µA

=0V ±100 nA

DS

VGS=-2.5V, ID=-8A

Diode Forward Voltage

SD

a

Total Gate Charge 37 45

g

Gate-Source Charge 6.5

gs

Gate-Drain Charge

gd

b

ISD=-2.3A, VGS=0V 0.7 1.1 V

=-10V, VGS=-4.5V,

V

DS

=-10A

I

D

Turn-on Delay Time 40 60

=-10V, RL=-10Ω,

V

t

Turn-on Rise Time 40 60

r

Turn-off Delay Time 170 270

t

Turn-off Fall Time

f

Input Capacitance 4500

iss

Output Cap acita nce 1100

oss

Reverse Transfer Capacitance

rss

DD

=-1A , V

I

D

=6Ω,

R

G

V

=0V, VDS=-15V

GS

GEN

=-4.5V,

Frequency = 1.0 MH Z

Min. Typ

-20 V

0.7 1 1.5 V

APM4463

a

.

18 25

2.5

90 150

810

Max.

°C

Unit

m

Ω

nC

ns

pF

Notes

a

: Guaranteed by design, not s u bj ec t to p r oduction testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

www.anpec.com.tw2

APM4463

Typical Characteristics

Output Characteristics

30

-VGS=3,4,5,6,7,8,9,10V

25

20

15

10

-Drain Current (A)

DS

-I

5

0

0246810

-VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

-VGS=2V

-IDS=250µA

Transfer Characteristics

40
35
30
25
20
15

-Drain Current (A)

DS

10

-I

5
0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TJ=25°C

TJ=125°C

TJ=-55°C

-VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.035

0.030

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Apr., 2003

0.025

-VGS=-2.5V

0.020

0.015

-On-Resistance (Ω)

0.010

DS(ON)

R

0.005

0.000
0 1020304050

-VGS=-4.5V

-IDS-Drain Current (A)

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