ANPEC APM4461KC-TR Datasheet

APM4461

P-Channel Enhancement Mode MOSFET

Pin DescriptionFeatures

• -20V/-7A, R

R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SOP-8 Package

••

= 25mΩ(typ.) @ VGS = -10V

DS(ON)

= 35mΩ(typ.) @ VGS = -4.5V

DS(ON)

= 55mΩ(typ.) @ VGS = -2.5V

DS(ON)

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information

APM 4461

Handling Code

Temp. Range

Package Code

Package Code
K : S O-8
Operation Junction Temp. Range
C : -55 to 1 50 C
Handling Code
TR : Tape & R eel

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

°

APM 4461 K :

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

*

I

D

Drain-Source Voltage -20

Gate-Source Voltage ±20

Maximum Drain Current – Continuous -7

APM 4461
XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Parameter Rating Unit

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw1

APM4461

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

I

DM

P

D

T

J

T

STG

R

JA

θ

Electrical Characteristics (T

Symbol Parameter Test Condition

Maximum Drain Current – Pulsed -25 A

Maximum Power Dissipation

TA=25 ºC 2.5

T

=100 ºC 1.0

A

Maximum Junction Temperature 150 ºC

Storage Temperature Range -55 to 150 ºC

Thermal Resistance – Junction to Ambient 50

= 25°C unless otherwise noted)

A

APM4461

Min. Typ. Max.

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage VGS=0V , IDS=-250A -20 V

DSS

Zero Gate Voltage Drain Current VDS=-24V , VGS=0V -1 µA

Gate Threshold Voltage

V

DS=VGS

, IDS=-250µA

-0.6 -1.5

Gate Leakage Current VGS=±20V , VDS=0V

Drain-Source On-state

a

VGS=-4.5V , IDS=-4A

Resistance

V

VGS=-10V , IDS=-7A

a

Diode Forward Voltage ISD=-2A, VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

I

DS

Turn-on Delay Time

T

Turn-on Rise Time

r

Turn-off Delay Time

T

Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

V

V

V

V

Frequency=1.0MHz

=-2.5V , IDS=-2A

GS

=-10V , VGS=-4.5V,

DS

=-2A

=-10V , IDS=-2A ,

DD

=-4.5 V , RG=0.2

GEN

=0V

GS

=-15V

DS

-0.7 -1.3

Ω

25 35

35 50

55 65

17.8 21

4

5.2

10 15

15 20

32 26

15 25

1240

340

216

±

100

W

ºC/W

Unit

m

V

nA

[

V

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw2

APM4461

Typical Characteristics

Output Characteristics

25

20

15

10

-Drain Current (A)

D

-I

5

0

012345

-VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50

-VGS=3,4,5,6,7,8,9,10V

-VGS=2V

-IDS=250µA

Transfer Characteristics

25

20

15

10

-Drain Current (A)

D

-I

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0.06

0.05

TJ=125°C

-VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

TJ=25°C

TJ=-55°C

1.25

1.00

0.75

(Normalized)

-Threshold Voltage (V)

0.50

GS(th)

0.25

-V

0.00

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003

0.04

0.03

-On-Resistance (Ω)

0.02

DS(ON)

R

0.01

0.00
0 5 10 15 20 25

-VGS=4.5V

-VGS=10V

-IDS-Drain Current (A)

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