ANPEC APM4435KC-TU, APM4435KC-TR Datasheet

APM4435

P-Channel Enhancement Mode MOSFET

Features

• -30V/-8A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 16mΩ(typ.) @ VGS = -10V

DS(ON)

= 24mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM4435

Handling C ode

Temp. Range

Package Code

APM 4435

APM 4435
XXXXX

Absolute Maximum Ratings (T

Package Code
K : S O -8
Operation Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : T ub e
TR : T ap e & R eel

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

Drain-Source Voltage -30

Gate-Source Voltage ±25

Maximum Drain Current – Continuous

= 25°C

T

A

-8

Maximum Drain Current – Pulsed -50

1

V

A

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APM4435

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

θJA

Maximum Power Dissipation

= 25°C

T

A

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Ambient 80 °C/W

2W

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage

DSS

=0V, ID= -250µA

V

GS

Zero Gate Voltage Drain Current VDS= -30V, VGS=0V -1

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state Resistance

V

DS=VGS

V

GS

VGS= -10V, ID= -8A

b

, ID= -250µA

= ±25V , VDS=0V

VGS= -4.5V, ID= -5A

Diode Forward Voltage

SD

a

Total Gate Charge 48 60

g

Gate-Source Charge 10

gs

Gate-Drain Charge

gd

b

ISD= -3A, VGS=0V -0.6 -1.2 V

= -15V, VGS= -10V,

V

DS

I

= -4.6A

D

Turn-on Delay Time 16 30

V

= -25V, ID= -2A,

t

Turn-on Rise Time 17 30

r

Turn-off Delay Time 75 120

t

Turn-off Fall Time

f

Input Capacitance 3800

iss

Output Capacitance 590

oss

Reverse Transfer Capacitance

rss

DD

= -10V, RG=6

V

GEN

=12.5

R

V

GS

Ω

L

=0V, VDS=-25V

Frequency = 1.0MHZ

Ω

APM4435

a

Min. Typ

.

Max.

-30 V

-1 -3 V

±

16 20

24 30

9

31 80

250

100

°

C

Unit

µ

nA

m

nC

pF

A

Ω

ns

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

2

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APM4435

Typical Characteristics

Output Characteristics

50

-VGS=4,5,6,7,8,9,10V

40

30

20

-ID-Drain Current (A)

10

0

0246810

-VDS - Drain-to-Source Voltage (V)

-VGS=3V

Transfer Characteristics

50

40

30

TJ=25°C

TJ=125°C

TJ=-55°C

20

-ID-Drain Current (A)

10

0

012345

-V

GS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

(Normalized)

0.75

-VGS(th)-Threshold Voltage (V)

0.50

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

-IDS=250µA

On-Resistance vs. Drain Current

0.05

0.04

0.03

0.02

0.01

RDS(on)-On-Resistance (Ω)

0.00
0 1020304050

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

3

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APM4435

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage

0.07

0.06

0.05

0.04

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00
0246810

-ID=8A

-VGS - Gate-to-Source Voltage (V)

Gate Charge

10

-VD=15V

-ID=4.6A

8

On-Resistance vs. Junction Temperature

1.8

-VGS=10V

-ID=8A

1.6

1.4

1.2

(Normalized)

1.0

RDS(on)-On-Resistance (Ω)

0.8

0.6

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (°C)

Capacitance

4500

3600

Ciss

6

4

2

-VGS-Gate-Source Voltage (V)

0

0 1020304050

QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

2700

1800

Capacitance (pF)

900

0

0 6 12 18 24 30

Coss

Crss

-VDS - Drain-to-Source Voltage (V)

4

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APM4435

Typical Characteristics

Source-Drain Diode Forward Voltage

30

10

TJ=150°C

1

-Source Current (Α)

S

-I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ=25°C

-VSD-Source-to-Drain Voltage (V )

Normalized Thermal Transient Impedence, Junction to Ambient

Single Pulse Power

100

80

60

40

Power (W)

20

0

0.01 0.1 1 10

Time (sec)

1

Duty Cycle = 0.5

D= 0.2

D= 0.1

0.1

D= 0.05

Thermal Impedance

D= 0.02

Normalized Effective Transient

0.01
1E-4 1E-3 0. 01 0.1 1 10

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

SINGLE PULSE

Square Wave Pulse Duration (sec)

5

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=80°C/W

3.TJM-TA=PDMZthJA

4.Surface Mounted

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APM4435

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

HE

0.015X45

e1 e2

D

A1

A

1

L

0.004max.

Dim

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.004 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

H 5.80 6.20 0.228 0.244

L 0.40 1.27 0.016 0.050

e1 0.33 0.51 0.013 0.020

e2 1.27BSC 0.50BSC

18

φ

Millimeters Inches

Min. Max. Min. Max.

°

8

°

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

6

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APM4435

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Peak temperature

temperature

Pre-heat temperature

°

183 C

Time

Classification Reflow Profiles

Convection or IR/

Convection

Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
Temperature maintained above 183°C
Time within 5°C of actual peak temperature
Peak temperature range
Ramp-down rate
Time 25°C to peak temperature

120 seconds max
60 – 150 seconds
10 –20 seconds 60 seconds
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
6 °C /second max. 10 °C /second max.
6 minutes max.

VPR

Package Reflow Conditions

pkg. thickness ≥≥≥≥ 2.5mm
and all bgas

Convection 220 +5/-0 °C Convection 235 +5/-0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

pkg. thickness < 2.5mm and
pkg. volume ≥≥≥≥ 350 mm³

7

pkg. thickness < 2.5mm and pkg.
volume < 350mm³

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APM4435

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions

P

P1

Ao

J

W

E

F

Po

A

t

D

Bo

D1

C

Ko

T2

B

T1

Application A B C J T1 T2 W P E

330 ± 1 62 +1.5

F D D1 Po P1 Ao Bo Ko tSOP- 8

5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

12.75+

0.15

2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1

8

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APM4435

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : [phone]

Fax : [phone]

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : [phone]

Fax : [phone]

12 9.3 2500

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

9

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