ANPEC APM4435KC-TU, APM4435KC-TR Datasheet

APM4435

P-Channel Enhancement Mode MOSFET

Features

• -30V/-8A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 16mΩ(typ.) @ VGS = -10V

DS(ON)

= 24mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM4435

Handling C ode

Temp. Range

Package Code

APM 4435

APM 4435
XXXXX

Absolute Maximum Ratings (T

Package Code
K : S O -8
Operation Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : T ub e
TR : T ap e & R eel

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

Drain-Source Voltage -30

Gate-Source Voltage ±25

Maximum Drain Current – Continuous

= 25°C

T

A

-8

Maximum Drain Current – Pulsed -50

1

V

A

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APM4435

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

θJA

Maximum Power Dissipation

= 25°C

T

A

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Ambient 80 °C/W

2W

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage

DSS

=0V, ID= -250µA

V

GS

Zero Gate Voltage Drain Current VDS= -30V, VGS=0V -1

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state Resistance

V

DS=VGS

V

GS

VGS= -10V, ID= -8A

b

, ID= -250µA

= ±25V , VDS=0V

VGS= -4.5V, ID= -5A

Diode Forward Voltage

SD

a

Total Gate Charge 48 60

g

Gate-Source Charge 10

gs

Gate-Drain Charge

gd

b

ISD= -3A, VGS=0V -0.6 -1.2 V

= -15V, VGS= -10V,

V

DS

I

= -4.6A

D

Turn-on Delay Time 16 30

V

= -25V, ID= -2A,

t

Turn-on Rise Time 17 30

r

Turn-off Delay Time 75 120

t

Turn-off Fall Time

f

Input Capacitance 3800

iss

Output Capacitance 590

oss

Reverse Transfer Capacitance

rss

DD

= -10V, RG=6

V

GEN

=12.5

R

V

GS

Ω

L

=0V, VDS=-25V

Frequency = 1.0MHZ

Ω

APM4435

a

Min. Typ

.

Max.

-30 V

-1 -3 V

±

16 20

24 30

9

31 80

250

100

°

C

Unit

µ

nA

m

nC

pF

A

Ω

ns

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

2

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APM4435

Typical Characteristics

Output Characteristics

50

-VGS=4,5,6,7,8,9,10V

40

30

20

-ID-Drain Current (A)

10

0

0246810

-VDS - Drain-to-Source Voltage (V)

-VGS=3V

Transfer Characteristics

50

40

30

TJ=25°C

TJ=125°C

TJ=-55°C

20

-ID-Drain Current (A)

10

0

012345

-V

GS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

(Normalized)

0.75

-VGS(th)-Threshold Voltage (V)

0.50

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Dec., 2001

-IDS=250µA

On-Resistance vs. Drain Current

0.05

0.04

0.03

0.02

0.01

RDS(on)-On-Resistance (Ω)

0.00
0 1020304050

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

3

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