ANPEC APM4431KC-TU Datasheet

APM4431

P-Channel Enhancement Mode MOSFET

Features

• -30V/-6A, R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 32mΩ(typ.) @ VGS = -10V

DS(ON)

= 50mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM 4431

Handling Code
Tem p. Range
Package Code

APM4431 K :

AP M4431
XXXXX

Absolute Maximum Ratings (T

Package C ode
K : S O -8
Operation Junction Tem p. Range
C : -5 5 to 15 0 °C
Handling Code
TU : T ub e
TR : T ap e & R ee l

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID* Maximum Drain Current – Continuous
I

DM

Drain-Source Voltage -30
Gate-Source Voltage ±20

= 25°C

T

A

-6

Maximum Drain Current – Pulsed -30

V

A

* Surface Mounted o n F R4 Board , t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002

www.anpec.com.tw1

APM4431

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C

= 100°C

T

A

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

2.5

1.0

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage

DSS

V

=0V, ID= -250µA

GS

Zero Gate Voltage Drain Current VDS= -24V, VGS=0V -1
Gate Threshold Voltage

Gate Leakage Current

Drain-Sour c e On-state Res istance

V

DS=VGS

V

GS

VGS= -10V, ID= -5.3A

b

, ID= -250µA

= ±20V , VDS=0V

VGS= -4.5V, ID= -2A

Diode Forward Voltage

SD

a

Total Gate Charge 27 35

g

Gate-Source Charge 5

gs

Gate-Drain Charge

gd

b

ISD= -2.3A, VGS=0V -0.6 -1.3 V

V

= -15V, VGS= -10V,

DS

= -3A

I

D

Turn-on Delay Time 12 22

= -15V, ID= -2A,

V

t

Turn-on Rise Time 15 22

r

Turn - off Delay Time 35 58

t

Turn-off Fall Time

f

Input Capacitance 1450

iss

Output Capacitance 225

oss

Reverse Trans fer Capacitance

rss

DD

= -10V, RG=6

V

GEN

R

=7.5

Ω

L

V

=0V, VDS=-25V

GS

Frequenc y = 1.0 MH Z

Ω

APM4431

a

Min. Typ

.

Max.

-30 V

-1 -3 V

±

32 40
50 60

4.1

15 30

150

100

°

W

C

Unit

A

µ

nA

m

Ω

nC

ns

pF

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; puls e width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002

www.anpec.com.tw2

APM4431

Typical Characteristics

Output Characteristics

30

-VGS=5,6,7,8,9,10V

25

20

15

10

-ID-Drain Current (A)

5

0

0246810

-VDS - Drain-to-Source V oltage (V)

-VGS=4V

-VGS=3V

Transfer Characteristics

30

25

20

15

10

-ID-Drain Current (A)

5

0

012345

TJ=25°C

TJ=125°C

-V

GS - Gate-to-Source Voltage (V)

TJ=-55°C

Threshold Voltage vs. Junction Temperature

1.75

1.50

1.25

1.00

0.75

-IDS=250µA

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002

On-Resistance vs. Drain Current

0.08

0.07

0.06

0.05

0.04

0.03

0.02

RDS(on)-On-Resistance (Ω)

0.01

0.00
0 5 10 15 20

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

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