ANPEC APM4430KC-TU, APM4430KC-TR Datasheet

APM4430

N-Channel Enhancement Mode MOSFET

Features

• 30V/23A , R

R

••

•

Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

=4.5mΩ(typ.) @ VGS=10V

DS(ON)

=7mΩ(typ.) @ VGS=5V

DS(ON)

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems .

Ordering and Marking Information

APM 4430

Handling Code
Temp. Range
Package Code

Package Code
K : SO -8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : T u b e
TR : T a p e & R ee l

Pin Description

5

6

7

8

SO − 8

4

3

2

1

APM 4430 K :

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001

Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 23
Maximum Drain Current – Pulsed ± 60

APM 4430
XXXXX

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

Parameter Rating Unit

V

A

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APM4430

Absolute Maximum Ratings (T

Symbol

Parameter Rating Unit

= 25°C unless otherwise noted)

A

TA = 25°C 1.6

P

D

T

J

T

STG

R

thJA

Maximum Power Dissipation*

T

= 70°C 0.625

A

Maximum Junction Te mperature 150
Storage Temperature Range -55 to 150
Thermal Resistance – Junction to Ambient

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

V

I

R

V

DSS

I

DSS

GS(th)

GSS

DS(ON)

SD

Drain-Source Breakdown

Zero Gate Voltage Drain Current

=0V, ID=250µA

V

GS

VDS=24V, VGS=0V 1
VDS =24V, VGS =0V, T j = 55°C

Gate Threshold Voltage

V

DS=VGS

, ID=250µA

Gate Leakage Current VGS=±20V, VDS=0V ±100 nA
Drain-Source On-state

Resistance

VGS=10V, ID=23A 4.5 5
V

=5V, ID=17A 7 8

GS

Diode Forward Voltage IS=6A, VGS=0V 0.6 1.1 V

W

°C

80 °C/W

APM4430

Unit

Min. Typ. Max.

30 V

A

µ

5

A

µ

13V

m

Ω

Dynamic

Q

Total Gate Charge 40 55 nC

g

Q

Gate-Source Charge 17 nC

gs

Q

t

t

d(OFF)

C
C
C

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001

gd

d(ON)

t

r

t

f

iss

oss

rss

Gate-Drain Charge
Turn-on Delay Time 30 45 ns
Turn-on Rise Time 16 24 ns
Turn-off Delay Time 100 150 ns
Turn-off Fall Time

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

=15V, VGS=4.5V,

V

DS

=23A

I

D

V

=15V, ID=1A,

DD

V

=10V, RG=0.2

GEN

=0V

V

GS

=15V

V

DS

Ω

Frequency=1.0MHz

14 nC

55 70 ns

4800 pF

900 pF
320 pF

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APM4430

Typical Characteristics

Output Characteristics

80
70
60
50
40
30

-Drain Current (A)

D

20

I

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VDS-Drain-to-Source Voltage (V)

0.4

0.2

0.0

VGS=5,6,7,8,9,10V

VGS=4.5V

VGS=4V

VGS=3V

ID=250uA

Transfer Characteristics

60

48

36

TJ=25°C

24

-Drain Current (A)

D

I

12

TJ=125°C

TJ=-55°C

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain CurrentThreshold Voltage

0.010

0.008

VGS=5V

-0.2

-0.4

-V ariance (V)

GS(th)

-0.6

V

-0.8

-1.0

-50-250 255075100125150

TJ-Junction T emperature (°C) ID-Drain Current (A)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001

0.006

VGS=10V

0.004

(on)-On-Resistance(Ω)

DS

0.002

R

0.000
0 102030405060

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