ANPEC APM4429KC-TUL, APM4429KC-TU, APM4429KC-TRL, APM4429KC-TR Datasheet

APM4429

P-Channel Enhancement Mode MOSFET

Features

• -30V/-13A, R

R

R

••

• Super High Density Cell Design

••

••

• Reliable and Rugged

••

••

• SO-8 Package

••

= 8mΩ(typ.) @ V

DS(ON)

= 9mΩ(typ.) @ V

DS(ON)

=13mΩ(typ.) @ V

DS(ON)

= -20V

GS

= -10V

GS

= -4.5V

GS

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information



5

5

/,

!

"#

&5

%

$

,

,

,

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM 4429

Lead Free Code

Handling Code

Temp. Range

Package Code

APM 4429 K:

APM 4429
XXXXX

Absolute Maximum Ratings (T

Package Code
K : S O -8
Operation Junction Tem p. Range
C : -55 to 150 °C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Bland : Orginal Device

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

Drain-Source Voltage -30

DSS

V

Gate-Source Voltage ±20

GSS

*

I

Maximum Drain Current  Continuous

D

T

= 25°C

A

-13

V

A

IDM Maximum Drain Current  Pulsed -50

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003

www.anpec.com.tw1

APM4429

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

PD Maximum Power Dissipation

)

T

T

J

R

θ

JA

Maximum Operating and Storage Junction Temperature -55 to 150

STG

*

Thermal Resistance - Junction to Ambient 62.5 °C/W

T

= 25°C

A

T

= 100°C

A

2.5

1.0

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

VSD Diode Forward Voltage> I

Dynamic=

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

t

d(ON)

Tr Turn-on Rise Time

t

d(OFF)

Tf Turn-off Fall Time

C

C

C

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state

Resistance

>

Turn-on Delay Tim e

Turn-off Delay Time

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

V

V

V

V

VGS=-20V , IDS=-13A

VGS=-10V , IDS=-13A

V

V

l

V

V

R

V

V

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

=0V , I

GS

=-24V , V

DS

DS=VGS

=±20V , V

GS

=-4.5V , ID=-12A

GS

=-3A, VGS=0V

SD

=-15V , VGS=-10V

DS

=-13A

D

=-15V , ID=-1A ,

DD

=-10V , RG=6Ω

GEN

=15Ω

L

=0V

GS

=-25V

DS

=-250µA

DS

=0V -1 µA

GS

, I

=-250µA

DS

=0V

DS

APM4429

=

Typ

Min.

. Max.

-30

-1 -1.5 -2

±100

8 11

9 12

13 17

-0.7 -1.3

105 135

10.8

13.6

15 30

20 30

55 85

40 65

4730

800

240



Notes





a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

W

°C

Unit

V

V

nA

m Ω

V

nC

ns

pF

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003

www.anpec.com.tw2

APM4429

Typical Characteristics

Output Characteristics

50

-VGS= 4,5,6,7,8,9,10V

40

30

20



-VGS=3V

-VGS=2.5V

-ID-Drain Current (A)

10

-VGS=2V

0

0246810

-VDS - Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.75

1.50



-IDS =250µA

Transfer Characteristics

50

40

30



20

-ID-Drain Current (A)

10

0

01234

-V

On-Resistance vs. Drain Current

0.030

0.025

Tj=25oC

GS - Gate-to-Source Voltage (V)



Tj=125oC



Tj=-55oC



1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Sep., 2003

0.020

0.015





0.010

0.005

RDS(on)-On-Resistance (Ω)

0.000
0 20406080100

-VGS=20V

-VGS=4.5V

-VGS=10V

-ID - Drain Current (A)

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