ANPEC APM4425KC-TU, APM4425KC-TR Datasheet

APM4425

P-Channel Enhancement Mode MOSFET

Features

• -30V/-11A, R

R

= 11mΩ(typ.) @ VGS = -10V

DS(ON)

= 15mΩ(typ.) @ VGS = -4.5V

DS(ON)

Pin Description

• Super High Density Cell Design

••

• Reliable and Rugged

••

••

• SO-8 Package

••

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems

Ordering and Marking Information

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

SSS

G

D

DDD

P-Channel MOSFET

APM4425

Handling Code
Temp. Range
Package Cod e

APM 4425 K :

APM4425
XXXXX

Absolute Maximum Ratings (T

Package Code
K : S O -8
Operation Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Reel

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

V

DSS

V

GSS

ID* Maximum Drain Current – Continuous
I

DM

Drain-Source Voltage -30
Gate-Source Voltage ±25

= 25°C

T

A

-11

Maximum Drain Current – Pulsed -50

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw1

APM4425

Absolute Maximum Ratings (Cont.) (T

= 25°C unless otherwise noted)

A

Symbol Parameter Rating Unit

P

D

T

J

T

STG

R

JA

θ

Maximum Power Dissipation

TA = 25°C

= 100°C

T

A

Maximum J unction Tem p era ture 150
Storage Temperature Ra ng e -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

2.5

1.0

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

T

T

Drain-Source Breakdown

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage

Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=-2.1A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

=0V , IDS=-250µA

GS

V

=-24V , VGS=0V -1

DS

V

DS=VGS

=±25V , VDS=0V

V

GS

VGS=-10V , IDS=-11A
V

=-4.5V , IDS=-8.5A

GS

=-15V , VGS=-10V ,

V

DS

I

=-11A

D

Turn -on Del ay Time

=-15V , ID=-1A ,

Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

V

DD

V

GEN

=0V , VDS=-25V

V

GS

Frequency=1.0MHz

, IDS=-250µA

=-10V , RG=6

Ω

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

t

d(OFF)

C

C

C

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

APM4425

Min. Typ. Max.

-30 V

-1 -3
100

±

11 14
15 20

-0.6 -1.3

70 91
16

11

20 30

920

118 190

38 76

4600

800
230

W

C

°

Unit

µ

V

nA

m

V

nC

ns

pF

A

Ω

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

www.anpec.com.tw2

APM4425

Typical Characteristics

Output Characteristics

50

-VGS=4,5,6,7,8,9,10V

40

30

20

-VGS=3V

-ID-Drain Current (A)

10

0

012345

-VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

50

40

30

20

-ID-Drain Current (A)

10

0

012345

TJ=125°C

TJ=25°C

TJ=-55°C

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

1.25

1.00

0.75

(Normalized)

0.50

0.25

-VGS(th)-Threshold Voltage (V)

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002

-IDS=250µA

On-Resistance vs. Drain Current

0.0225

0.0200

0.0175

0.0150

0.0125

0.0100

RDS(on)-On-Resistance (Ω)

0.0075

0.0050
0 1020304050

VGS=-4.5V

VGS=-10V

-ID - Drain Current (A)

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