ANPEC APM4420KC-TU, APM4420KC-TR Datasheet

APM4420

N-Channel Enhancement Mode MOSFET

Features

• 30V/12.5A, R

R

••

• Super High Dense Cell Design for

••

Extremely Low R

••

• Reliable and Rugged

••

••

• SO-8 Package

••

=6mΩ(typ.) @ VGS=10V

DS(ON)

=10mΩ(typ.) @ VGS=4.5V

DS(ON)

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems .

Ordering and Marking Information

APM4420

Handling Code
Temp. Range
Package Co de

Package Code
K : SO-8
Operating Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : Tube
TR : Tape & Reel

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D

G

S

N-Channel MOSFET

APM4420 K :

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

I

DM

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

Drain-So urc e Voltage 30
Gate-Source Voltage ±20
Maximum Drain Cu rr e nt – Continuou s 12.5
Maximu m D rain Curre nt – Pulsed 50

APM4420
XXXXX

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

Parameter Rating Unit

V

A

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APM4420

Absolute Maximum Ratings Cont. (T

Symbol

P

D

T

J

T

STG

R

θjA

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Drain-Source Brea k do w n

DSS

Voltage
Zero Gate Voltage Drain

Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=2.3A, VGS=0V

SD

b

Parameter Rating Unit

= 25°C unless otherwise noted)

A

V

=0V, ID=250µA

GS

VDS=24V , VGS=0V 1
V
V

DS=VGS

=

±16

GS

, ID=250µA

V, VDS=0V

VGS=10V, ID=12.5A

=4.5V, ID=7A

V

GS

= 25°C unless otherwise noted)

A

TA=25°C

=100°C

T

A

2.5

1.0

APM4420

Min. Typ. Max.

30 V

13

±

69

10 13

0.6 1.3

100

W

°
°

C/W

°

C
C

Unit

A

µ

V

nA

m

Ω

V

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T
C
C
C

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

=15V, ID=12.5A

V

DS

V

=5V ,

GS

V

=15V, ID=1A,

DD

V

GEN

VGS=0V

=15V

V

DS

Frequency=1.0MHz

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

=10V, RG=6Ω, RL=15

28 36

8

nC

5

13 20

915

Ω

43 66

ns

14 28

3200

680

pF

275

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APM4420

Typical Characteristics

Output Characteristics

50

VGS=5,6,7,8,9,10V

40

VGS=4V

30

20

-Drain Current (A)

DS

I

10

VGS=3V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.4

1.2

1.0

IDS=250µA

Transfer Characteristics

50

40

30

20

-Drain Current (A)

DS

I

10

0

0123456

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.016

0.014

0.012

0.010

TJ=25°C

TJ=-55°C

TJ=125°C

VGS=4.5V

0.8

(Normalized)

0.6

-Thershold Voltage (V)

GS(th)

0.4

V

0.2

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.3 - Jul., 2002

0.008

0.006

-On-Resistance (Ω)

0.004

DS(ON)

R

0.002

0.000
0 1020304050

VGS=10V

IDS-Drain Current (A)

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