ANPEC APM4416KC-TR, APM4416KC-TU Datasheet

APM4416

N-Channel Enhancement Mode MOSFET

Features

• 30V/8A , R

R

••

•

Super High Dense Cell Design for Extremely

••

Low R

DS(ON)

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

=15mΩ(typ.) @ VGS=10V

DS(ON)

=22mΩ(typ.) @ VGS=4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer ,

Portable Equipment and Battery Powered
Systems.

Ordering and Marking Information

SO-8

1

S

S

GD

2

3

45

8S

D

7

D

6

D

T op View

D

G

S

N-Channel MOSFET

APM4416

Handling Code
Temp. Range
Package Cod e

APM 4416 K :

APM4416
XXXXX

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

*

I

D

I

DM

Drain-Source Voltage 30
Gate-Source Voltage ±20
Maximum Drain Current – Continuous 8
Maximum Drain Current – Pulsed 32

Parameter Rating Unit

Package Code
K : S O -8
Operating Junction Temp. Range
C : -5 5 to 1 5 0° C
Handling Code
TU : T u b e
TR : T a p e & Reel

XXXXX - Date Code

(TA = 25°C unless otherwise noted)

V

A

* Surface Mounted on FR4 Board, t ≤ 10 sec.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw1

APM4416

Absolute Maximum Ratings Cont. (T

Symbol

P

D

T

J

T

STG

R

jA

θ

Maximum Power Dissipation

Maximum Junction Temperature 150
Storage Temperature Range -55 to 150

Thermal Resistance – Junction to Ambient 50

Electrical Characteristics (T

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q
Q
Q

t

d(ON)

T

t

d(OFF)

T

C

C

C

Drain-Source Breakd o w n

DSS

Voltage
Zero Gate Voltage Drain

Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state

a

Resistance

a

Diode Forward Voltage ISD=2A , VGS=0V

SD

b

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Turn-on Delay Time
Turn-on Rise Time

r

Turn-off Delay Time
Turn-off Fall Time

f

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Parameter Rating Unit

TA=25°C
T

=100°C

A

= 25°C unless otherwise noted)

A

V

=0V , IDS=250µA

GS

VDS=24V , VGS=0V 1

=24V, VGS=0V, Tj= 55°C

V

DS

V
V

, IDS=250µA

DS=VGS

=±20V , VDS=0V

GS

VGS=10V , IDS=4A

=4.5V , IDS=2A

V

GS

=15V , IDS= 10A

V

DS

=5V

V

GS

V

=15V , IDS=2A ,

DD

V

=10V , RG=6

GEN

=0V

V

GS

=15V

V

DS

Ω

Frequency=1.0MHz

= 25°C unless otherwise noted)

A

2.5

1.0

APM4416

Min. Typ. Max.

30 V

5

13

100

±

15 18
22 30

0.6 1.3

15 20

5.8

3.8
11 18
17 26
37 54
20 30

1150

230
100

W

°
°

C/W

°

C
C

Unit

A

µ

V

nA

m

Ω

V

nC

ns

pF

Notes

a

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b

: Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

www.anpec.com.tw2

APM4416

Typical Characteristics

Output Characteristics

30

25

20

15

-Drain Current (A)

10

DS

I

5

0

0246810

VGS=5,6,7,8,9,10V

VGS=4V

VGS=3.5V

VGS=3V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.2

IDS=250µA

Transfer Characteristics

40

30

20

-Drain Current (A)

DS

10

I

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0

TJ=125°C

TJ=25°C

TJ=-55°C

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.040

0.035

1.0

0.8

(Normalized)

-Threshold Voltage (V)

0.6

GS(th)

V

0.4

-50 -25 0 25 50 75 100 125 150

Tj-Junction T emperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002

0.030

VGS=4.5V

0.025

0.020

VGS=10V

0.015

-On-Resistance (Ω)

0.010

DS(ON)

R

0.005

0.000
0 5 10 15 20 25 30

IDS-Drain Current (A)

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