ANPEC APM4410KC-TU, APM4410KC-TR Datasheet

APM4410

N-Channel Enhancement Mode MOSFET

Features

• 30V/11.5A, R

R

••

•

High Density Cell Design

••

••

•

Reliable and Rugged

••

••

•

SO-8 Package

••

= 9mΩ(typ.) @ VGS = 10V

DS(ON)

=14.5mΩ(typ.) @ VGS = 4.5V

DS(ON)

Pin Description

Applications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems

Ordering and Marking Information

APM4410

Handling Code

Temp. Range

Package Code

Package Code
K : S O -8
Operating Junction Temp. Range
C : -55 to 125°C
Handling Code
TU : Tube
TR : Tape & R ee l

1

S

S

GD

2

3

45

8S

7

6

D

D

D

SO − 8

D

G

S

N-Channel MOSFET

APM 4410 K :

Absolute Maximum Ratings (T

Symbol

V

DSS

V

GSS

I

D

I

DM

P

D

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

Drain-Source Voltage 30

Gate-Source Voltage ±20

Maximum Drain Current – Continuous 11.5

Maximum Drain Current – Pulsed 50

Maximum Power Dissipation

APM 4410
XXXXX

XXXXX - Date Code

= 25°C unless otherwise noted)

A

Parameter Rating Unit

V

A

TA=25°C

=100°C

T

A

2.5

1.0

W

www.anpec.com.tw1

APM4410

Thermal Characteristics

Symbol

T

J

T

STG

R

θJA

Maximum Junction Temperature 150

Storage Temperature Range -55 to 150

Thermal Resistance - Junction to Ambient 50 °C/W

Parameter Rating Unit

Electrical Characteristics (TA=25°C unless otherwise noted)

Symbol Parameter Test Condition

Static

BV

I

DSS

V

GS(th)

I

GSS

R

DS(ON)

V

Dynamic

Q

Q

Q

t

d(ON)

t

d(OFF)

C

C

C

Drain-Source Breakdown Voltage

DSS

V

=0V, ID=250µA

GS

Zero Gate Voltage Drain Current VDS=24V, VGS=0V 1 uA

Gate Threshold Voltage

Gate Leakage Current VGS=±20V, V

Drain-Source On-state Resistance

V

DS=VGS

VGS=10V, ID=11.5A 9 11

b

, ID=250µA

=0V ±100 nA

DS

VGS=4.5V, ID=5A

Diode Forward Voltage

SD

a

Total Gate Charge 45 60

g

Gate-Source Charge 10

gs

Gate-Drain Charge

gd

b

ISD=2.3A, VGS=0V 0.6 1.2 V

V

=15V, VGS=10V,

DS

=10A

I

D

Turn-on Delay Time 16 25

=15V, RL=15Ω,

V

t

Turn-on Rise Time 24 35

r

Turn-off Delay Time 78 110

t

Turn-off Fall Time

f

Input Capacitance 2000

iss

Output Capacitance 400

oss

Reverse Transfer Capacitance

rss

DD

=1A , V

I

D

=6Ω,

R

G

V

=0V, VDS=25V

GS

GEN

=10V,

Frequency = 1.0MHZ

Min. Typ

30 V

°C

APM4410

a

.

Max.

Unit

13V

m

14.5 16

Ω

nC

8

ns

42 80

pF

220

Notes

a

: Guaranteed by design, not subject to production testing

b

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

www.anpec.com.tw2

APM4410

Typical Characteristics

Output Characteristics

50

VGS=5,6,7,8,9,10V

40

30

20

-Drain Current (A)

DS

I

10

0

0246810

VGS=4V

VGS=3V

VDS-Drain-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.4

IDS=250µA

1.2

Transfer Characteristics

50

40

30

20

-Drain Current (A)

DS

I

10

0

012345

VGS-Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.020

0.016

TJ=25°C

TJ=-55°C

TJ=125°C

1.0

0.8

(Normalized)

0.6

0.4

VGS(th)-Threshold Voltage (V)

0.2

-50 -25 0 25 50 75 100 125 150

Tj-Junction Temperature (°C)

Copyright  ANPEC Electronics Corp.
Rev. A.5 - July., 2002

VGS=4.5V

0.012

0.008

VGS=10V

-On-Resistance (Ω)

DS(ON)

0.004

R

0.000
0 5 10 15 20 25 30 35

IDS-Drain Current (A)

www.anpec.com.tw3