ANPEC APM3055LVC-TR Datasheet

N-Channel Enhancement Mode MOSFET

Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002

APM3055L

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

Applications

• Switching Regulators

• Switching Converters

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

V

DSS

Drain-Source Voltage 30

V

GSS

Gate-Source Voltage ±20

V

I

D

Maximum Drain Current – Continuous 15

I

DM

Maximum Drain Current – Pulsed 30

A

• 30V/12A, R

DS(ON)

=100mΩ(max) @ VGS=10V

R

DS(ON)

=200mΩ(max) @ VGS=4.5V

••

••

•

Super High Dense Cell Design

••

••

•

High Power and Current Handling Capability

••

••

•

TO-252 and SOT-223 Packages

Package Code

U : TO-2 52 V : S O T -22 3

Operation Junction Temp. Range

C : -55 to 150 C

Handling Code

TR : Tape & Reel

°

APM 3055L

Handling Code
Temp. R ange
Package Code

XXXXX - Date Code

APM 3055L U /V :

APM 3055L
XXXXX

GDS

123

Top View of TO-252

SDG

123

Top View of SOT-223

Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002

APM3055L

www.anpec.com.tw2

Symbol

Parameter Rating Unit

TO-252 50

TA=25°C

SOT-223 3

TO-252 20

P

D

Maximum Power Dissipation

T

A

=100°C

SOT-223 1.2

W

T

J

Maximum Junction Temperature 150

°

C

T

STG

Storage Temperature Range -55 to 150

°

C

APM3055L

Symbol Parameter Test Condition

Min. Typ. Max.

Unit

Static

BV

DSS

Drain-Source Breakdown
Voltage

V

GS

=0V, ID=250µA

30 V

I

DSS

Zero Gate Voltage Drain
Current

V

DS

=24V, VGS=0V

1

µ

A

V

GS(th)

Gate Thre shold Voltage

V

DS=VGS

, ID=250µA

13V

I

GSS

Gate Leakage Current

V

GS

=±20V, VDS=0V

±

100

nA

VGS=10V, ID=12A

75 100

R

DS(ON)

Drain-Source On-state
Resistance

V

GS

=4.5V, ID=6A

100 200

m

Ω

V

SD

Diode Forward Voltage IS=6A, VGS=0V

0.6 1.3 V

Dynamic

Q

g

Total Ga te Charge

8.5 12

Q

gs

Gate-Source Charge

1.1

Q

gd

Gate-Drain Charge

V

DS

=15V, VGS=10V,

I

D

=2A

1.8

nC

t

ON

Turn -on Time

40

t

d(ON)

Turn -on Del ay Time 11

t

r

Turn -on Ris e Time

17

t

d(OFF)

Turn-off Delay Time

37

t

f

Turn-off Fall Time

20

t

OFF

Turn-off Time

V

DD

=15V, ID=2A,

V

GS

=10V, RG=6

Ω

60

ns

Electrical Characteristics (T

A

= 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A

= 25°C unless otherwise noted)

Copyright  ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002

APM3055L

www.anpec.com.tw3

Typical Characteristics

01234

0

5

10

15

20

25

VGS = 10, 9, 8, 7, 6V

VGS = 5V

VGS = 3V

VGS = 4V

Output Characteristics

VDS- Drain-to-Source Voltage (V)

I

DS

- Drain Current(A )

0123456

0

5

10

15

20

25

-55oC

+25oC

+125oC

Transfer Characteristics

VGS- Gate-to-Source Voltage (V)

I

D

- Drina current (A)

-50 -25 0 25 50 75 100 125 150

1.0

1.1

1.2

1.3

1.4

1.5

1.6

Threshold Voltage v.s.T

J

IDS =250

µµµµ

A

V

GS(th)

(V)

Tj - Junction Temperature(oC)

-50-250 255075100125150

0.7

0.8

0.9

1.0

1.1

1.2

Normalized V

GS(th)

v.s. T

J

IDS =250

µµµµ

A

V

GS(th)

- Normalized

Tj - Junction Temperature (oC)

3456789

70

80

90

100

110

120

130

140

150

160

170

On-Resistance v.s. Gate to Source Voltage

ID=10A

R

DS(ON)

- On-Resistance (m

Ω

ΩΩ

Ω

)

VGS- Gate Voltage (V)

-50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

On-Resistance v.s. Junction Temperature

VGS =10V
I

DS

=12A

R

DS(ON)

- On-Resistance (

Ω

ΩΩ

Ω

)

(Normalized)

TJ-Junction Temperature(oC)