N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
• Switching Regulators
• Switching Converters
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Rating Unit
V
DSS
Drain-Source Voltage 30
V
GSS
Gate-Source Voltage ±20
V
I
D
Maximum Drain Current – Continuous 15
I
DM
Maximum Drain Current – Pulsed 30
A
• 30V/12A, R
DS(ON)
=100mΩ(max) @ VGS=10V
R
DS(ON)
=200mΩ(max) @ VGS=4.5V
••
••
•
Super High Dense Cell Design
••
••
•
High Power and Current Handling Capability
••
••
•
TO-252 and SOT-223 Packages
Package Code
U : TO-2 52 V : S O T -22 3
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
°
APM 3055L
Handling Code
Temp. R ange
Package Code
XXXXX - Date Code
APM 3055L U /V :
APM 3055L
XXXXX
GDS
123
Top View of TO-252
SDG
123
Top View of SOT-223
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw2
Symbol
Parameter Rating Unit
TO-252 50
TA=25°C
SOT-223 3
TO-252 20
P
D
Maximum Power Dissipation
T
A
=100°C
SOT-223 1.2
W
T
J
Maximum Junction Temperature 150
°
C
T
STG
Storage Temperature Range -55 to 150
°
C
APM3055L
Symbol Parameter Test Condition
Min. Typ. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, ID=250µA
30 V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=24V, VGS=0V
1
µ
A
V
GS(th)
Gate Thre shold Voltage
V
DS=VGS
, ID=250µA
13V
I
GSS
Gate Leakage Current
V
GS
=±20V, VDS=0V
±
100
nA
VGS=10V, ID=12A
75 100
R
DS(ON)
Drain-Source On-state
Resistance
V
GS
=4.5V, ID=6A
100 200
m
Ω
V
SD
Diode Forward Voltage IS=6A, VGS=0V
0.6 1.3 V
Dynamic
Q
g
Total Ga te Charge
8.5 12
Q
gs
Gate-Source Charge
1.1
Q
gd
Gate-Drain Charge
V
DS
=15V, VGS=10V,
I
D
=2A
1.8
nC
t
ON
Turn -on Time
40
t
d(ON)
Turn -on Del ay Time 11
t
r
Turn -on Ris e Time
17
t
d(OFF)
Turn-off Delay Time
37
t
f
Turn-off Fall Time
20
t
OFF
Turn-off Time
V
DD
=15V, ID=2A,
V
GS
=10V, RG=6
Ω
60
ns
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw3
Typical Characteristics
01234
0
5
10
15
20
25
VGS = 10, 9, 8, 7, 6V
VGS = 5V
VGS = 3V
VGS = 4V
Output Characteristics
VDS- Drain-to-Source Voltage (V)
I
DS
- Drain Current(A )
0123456
0
5
10
15
20
25
-55oC
+25oC
+125oC
Transfer Characteristics
VGS- Gate-to-Source Voltage (V)
I
D
- Drina current (A)
-50 -25 0 25 50 75 100 125 150
1.0
1.1
1.2
1.3
1.4
1.5
1.6
Threshold Voltage v.s.T
J
IDS =250
µµµµ
A
V
GS(th)
(V)
Tj - Junction Temperature(oC)
-50-250 255075100125150
0.7
0.8
0.9
1.0
1.1
1.2
Normalized V
GS(th)
v.s. T
J
IDS =250
µµµµ
A
V
GS(th)
- Normalized
Tj - Junction Temperature (oC)
3456789
70
80
90
100
110
120
130
140
150
160
170
On-Resistance v.s. Gate to Source Voltage
ID=10A
R
DS(ON)
- On-Resistance (m
Ω
ΩΩ
Ω
)
VGS- Gate Voltage (V)
-50 -25 0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
On-Resistance v.s. Junction Temperature
VGS =10V
I
DS
=12A
R
DS(ON)
- On-Resistance (
Ω
ΩΩ
Ω
)
(Normalized)
TJ-Junction Temperature(oC)
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw4
Typical Characteristics (Cont.)
012345678910
0
2
4
6
8
10
Gate Charge
VDS=15V
I
DS
= 2A
V
GS
- Gate to Source Voltage (V)
QG-Gate Charge(nC)
0 5 10 15 20 25 30
0
100
200
300
400
500
Crss
Coss
Ciss
Capacitance
VDS- Drain-to-Source Voltage(V)
Capacitance (pF)
0.4 0.8 1.2 1.6 2.0 2.4
0.1
1
10
Source-Drain Diode For ward Voltage
TJ=25oC
TJ=150oC
I
S
- Source Current(A)
VSD- Source to Drain Voltage
1E-5 1E-4 1E-3 0.01 0.1 1 10
0
10
20
30
40
50
Single P u ls e Power C a pability
Peak Power (W)
Time (sec)
1E-5 1E-4 1E-3 0.01 0.1 1 10 100
0.01
0.1
1
Normalized Thermal Transient Impedance, Junction to Ambient
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0 .5
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
thJA
=50 oC/W
3.TJM-TA=PDMZ
thJA
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration(sec)
J
J
2
DM
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50°C/W
3. TJM-TA=PDMZ
thJA
4. Surface Mounted
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw5
Package Information
TO-252( Reference JEDEC Registration TO-252)
Millimeters Inches
Dim
Min. Max. Min. Max .
A 2.18 2.39 0.086 0.094
A1 0.89 1.27 0.035 0.050
b 0.508 0.89 0.020 0.035
b2 5.207 5.4 61 0.205 0.215
C 0.46 0.58 0.018 0.023
C1 0.46 0.58 0.018 0.023
D 5.334 6.22 0.210 0.245
E 6.35 6.73 0.250 0.265
e1 3.96 5.18 0.156 0.2 04
H 9.398 10.41 0.370 0.410
L 0.51 0.020
L1 0.64 1.02 0.025 0.0 40
L2 0.89 2.032 0.0 35 0.080
L2
D
L1
b
b2
E
C1
A
H
L
C
A1
e1
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw6
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
B1
D
H E
K
e
e1
A
c
L
A1
a
B
b
Millimeters InchesDim
Min. Max. Min. Max.
A 1.50 1.80 0.06 0.07
A1 0.02 0.08
B 0.60 0.80 0.02 0.03
B1 2.90 3.10 0.11 0.12
c 0.28 0.32 0.01 0.01
D 6.30 6.70 0.25 0.26
E 3.30 3.70 0.13 0.15
e 2.3 BSC 0.09 BSC
e1 4.6 BSC 0.18 BSC
H 6.70 7.30 0.26 0.29
L 0.91 1.10 0.04 0.04
K 1.50 2.00 0.06 0.08
α
0
°
10
°
0
°
10
°
β
13
°
13
°
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw7
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition (IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
°
temperature
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C)
120 seconds max
Temperature maintaine d above 183°C
60 – 150 seconds
Time within 5°C of actual peak temperature
10 –20 seconds 60 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness
≥≥≥≥
2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume
≥≥≥≥
350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 220 +5/-0 °C Convection 235 +5/- 0 °C
VPR 215-219 °C VPR 235 +5/-0 °C
IR/Convection 220 +5/-0 °C IR/Convection 235 +5/-0 °C
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw8
R e lia bility te s t p rog ra m
Test item Method Description
SOLDERABILITY M IL-STD-883D-2003
245°C , 5 SEC
HO LT MIL-STD-883D-1005.7
1000 Hrs Bias @ 125 °C
PCT JESD-22-B, A102
168 Hrs, 100 % RH , 121°C
TST MIL-STD-883D-1011.9
-65°C ~ 150°C, 200 Cycles
ESD MIL-STD-883D-3015.7 VH BM > 2KV, V MM > 200V
La tc h -Up JES D 78 10 ms , Itr > 100mA
Carrier Tape
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Application
A B C J T1 T2 W P E
330 ±3100 ± 213 ± 0. 5 2 ± 0.5
16.4 + 0.3
-0.2
2.5± 0.5
16+ 0.3
- 0.1
8 ± 0.1 1.75± 0.1
F D D1 Po P1 Ao Bo Ko t
TO-252
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05
Application
A B C J T1 T2 W P E
330±162±1.5
12.75
±
0.15
2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1
F D D1 Po P1 Ao Bo Ko t
SOT-223
5.5 ± 0.05 1.5+ 0.1 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 7.5± 0.1 2.1± 0.1 0.3±0.05
Copyright ANPEC Electronics Corp.
Rev. A.6 - Apr., 2002
APM3055L
www.anpec.com.tw9
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, T aiwan, R.O.C.
T el : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, T aiwan, R. O. C.
T el : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application Carrier Width C over Tape Width Devices Per Re el
SOT- 223
12 9.3 2500
TO- 252
16 13.3 2500
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